Epitaxial lateral overgrowth (ELO) of GaN is a well-established technology to reduce the dislocation density of III-Nitride films grown on sapphire. One of the longstanding problems with ELO has been the so-called wing tilt. This wing tilt is a result of a tilt of the GaN crystal in the regions not grown on the SiO2 opening which results in high dislocation densities in the coalescence region of the film. In this study, we demonstrate that wing tilt in ELO is result of the SiO2 used to pattern GaN templates. We show that wing tilt occurs immediately at the start of the ELO growth process. Furthermore, we show that wing tilt can be avoided completely if an etched template is used in combination with facet controlled epitaxial lateral overgrowth (FACELO). Results are based on homoepitaxial GaN growth in combination with TEM, XRD, and PL studies.
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