Prof. Janusz B. Kaniewski Profile

Prof. Janusz B. Kaniewski

at Institute of Microelectronics and Photonics

SPIE Involvement:

Author

Publications (12)

Proceedings Article | 6 October 2017 Paper

The analysis of functional regions in the long-wavelength-infrared interband cascade photodetector

Krzysztof Czuba, Iwona Sankowska, Agata Jasik, Ewa Papis-Polakowska, Janusz Kaniewski

Proceedings Volume 10433, 104330K (2017) https://doi.org/10.1117/12.2279602

KEYWORDS: Superlattices, Long wavelength infrared, Photodetectors, Defense technologies, Medical diagnostics, Missiles, Defense systems, Environmental monitoring, Environmental sensing, Infrared photography

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Proceedings Article | 30 August 2017 Presentation + Paper

Noise and detectivity of InAs/GaSb T2SL 4.5 um IR detectors

Andrzej Kolek, Łukasz Ciura, Krzysztof Czuba, Agata Jasik, Jarosław Jureńczyk, Iwona Sankowska, Janusz Kaniewski

Proceedings Volume 10404, 1040402 (2017) https://doi.org/10.1117/12.2272722

KEYWORDS: Infrared detectors, Sensors, Superlattices

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SPIE Journal Paper | 19 February 2014 Open Access

Comprehensive analysis of new near-infrared avalanche photodiode structure

Krzysztof Czuba, Jaroslaw Jurenczyk, Janusz Kaniewski

JARS, Vol. 8, Issue 01, 084999, (February 2014) https://doi.org/10.1117/12.10.1117/1.JRS.8.084999

KEYWORDS: Avalanche photodiodes, Absorption, Avalanche photodetectors, Doping, Aluminum, Gallium, Ionization, Semiconductors, Computer aided design, Photodetectors

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Proceedings Article | 18 December 2012 Paper

Modeling of InGaAs/InAlAs/InP avalanche photodiodes with undepleted absorber

Janusz Kaniewski, Jaroslaw Jurenczyk, Dariusz Zak, Jan Muszalski

Proceedings Volume 8697, 869721 (2012) https://doi.org/10.1117/12.2007245

KEYWORDS: Avalanche photodiodes, Avalanche photodetectors, Doping, Ionization, Absorption, Instrument modeling, Receivers, Indium gallium arsenide, Telecommunications, Quantum efficiency

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Proceedings Article | 3 September 2008 Paper

Advanced InGaAs/InAlAs/InP avalanche photodiodes for high-speed detection of 1.55 μm infrared radiation

J. Kaniewski, J. Muszalski, J. Piotrowski

Proceedings Volume 7082, 70820F (2008) https://doi.org/10.1117/12.798315

KEYWORDS: Avalanche photodetectors, Avalanche photodiodes, Ionization, Instrument modeling, Infrared radiation, Absorption, Telecommunications, Indium gallium arsenide, Sensors, Signal detection

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Proceedings Article | 31 May 2005 Paper

Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 µm infrared radiation

J. Kaniewski, J. Muszalski, J. Pawluczyk, J. Piotrowski

Proceedings Volume 5783, (2005) https://doi.org/10.1117/12.602687

KEYWORDS: Mirrors, Absorption, Reflectivity, Reflectors, Dielectrics, Aluminum, Silicon, Gallium, Indium gallium arsenide, Quantum efficiency

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Proceedings Article | 10 October 2003 Paper

Refractive GaAs microlenses monolithically integrated with InGaAs and HgCdTe photodetectors

Jozef Piotrowski, Henryk Mucha, Zbigniew Orman, Jaroslaw Pawluczyk, Jacek Ratajczak, Janusz Kaniewski

Proceedings Volume 5074, (2003) https://doi.org/10.1117/12.511997

KEYWORDS: Microlens, Gallium arsenide, Photodetectors, Lenses, Photoresist materials, Sensors, Infrared radiation, Ions, Wet etching, Infrared photography

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Proceedings Article | 17 February 2003 Paper

InAs photodetectors for high-speed detection of infrared radiation

Jozef Piotrowski, Zbigniew Orman, Janusz Kaniewski

Proceedings Volume 4833, (2003) https://doi.org/10.1117/12.474368

KEYWORDS: Indium arsenide, Infrared radiation, Resistance, Photodiodes, Doping, Photodetectors, Diffusion, Gallium arsenide, Capacitance, Heterojunctions

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Proceedings Article | 10 October 2001 Paper

Epitaxial InAs detectors optically immersed to GaAs microlenses

Janusz Kaniewski, Zbigniew Orman, Jozef Piotrowski, M. Sioma, L. Ornoch, Mariusz Romanis

Proceedings Volume 4369, (2001) https://doi.org/10.1117/12.445349

KEYWORDS: Indium arsenide, Gallium arsenide, Capacitance, Sensors, Resistance, Microlens, Photovoltaic detectors, Heterojunctions, Solids, Silicon

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Proceedings Article | 17 April 2001 Paper

Stress-induced effects in semiconducting epitaxial layers

Jadwiga Bak-Misiuk, J. Domagala, Andrzej Misiuk, Janusz Kaniewski, J. Adamczewska, J. Trela, Kazimierz Reginski, D. Dobosz, M. Prujszczyk, J. Tedenac

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425443

KEYWORDS: Semiconductors, X-rays, Aluminum, Crystals, Indium arsenide, Gallium arsenide, Interfaces, Gallium antimonide, Polishing, Heterojunctions

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Proceedings Article | 15 December 2000 Paper

Advanced InGaAs detectors on GaAs substrates

Janusz Kaniewski, Zbigniew Orman, Jozef Piotrowski, Kazimierz Reginski, Mariusz Romanis

Proceedings Volume 4130, (2000) https://doi.org/10.1117/12.409859

KEYWORDS: Gallium arsenide, Sensors, Indium gallium arsenide, Indium arsenide, Lenses, Photovoltaic detectors, Doping, Heterojunctions, Infrared detectors, Photodetectors

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Proceedings Article | 8 April 1999 Paper

Reciprocal lattice mapping of InGaAs layers grown on InP(001) and GaAs(001) substrates

Jadwiga Bak-Misiuk, Janusz Kaniewski, J. Domagala, Kazimierz Reginski, J. Adamczewska, J. Trela

Proceedings Volume 3725, (1999) https://doi.org/10.1117/12.344761

KEYWORDS: Indium arsenide, Gallium arsenide, Indium gallium arsenide, Scattering, Diffraction, X-rays, X-ray diffraction, Molecular beam epitaxy, Interfaces, Polishing

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Showing 5 of 12 publications

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