The effect of the graded InxGa1-xAs layer on the distribution of the strain was
studied by calculating the strain of different models using the finite element method. The results
demonstrate that the graded InxGa1-xAs layer can reduce the strain and thus lead to longer
emission wavelength. The results also demonstrate that the graded InxGa1-xAs layer can increase
strain in the GaAs capping layer which cause disadvantage to grow stacked InAs/GaAs QD
structure. But the strain can be released though increase the thickness of spacer layer when grow
stacked structure.
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