Mr. Jianfeng Chen Profile

Jianfeng Chen

Research Assistant at Stony Brook Univ

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Author

Publications (4)

Proceedings Article | 17 February 2011 Paper

Type-I GaSb based single lateral mode diode ridge lasers operating at room temperature in 3.1-3.2 μm spectral region

G. Tsvid, T. Hosoda, J. Chen, G. Kipshidze, L. Shterengas, C. Frez, A. Soibel, S. Forouhar, G. Belenky

Proceedings Volume 7953, 79531Q (2011) https://doi.org/10.1117/12.875307

KEYWORDS: Dielectrics, Waveguides, Continuous wave operation, Metals, Semiconductor lasers, Gallium antimonide, Near field optics, Laser processing, Diodes

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Proceedings Article | 24 January 2011 Paper

Low power consumption lasers for next generation miniature optical spectrometers for trace gas analysis

S. Forouhar, C. Frez, K. J. Franz, A. Ksendzov, Y. Qiu, K. A. Soibel, J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky

Proceedings Volume 7945, 79450M (2011) https://doi.org/10.1117/12.871565

KEYWORDS: Semiconductor lasers, Quantum cascade lasers, Space operations, Spectrometers, Absorption, Laser development, Quantum efficiency, Reliability, Chemical analysis, Continuous wave operation

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Proceedings Article | 4 May 2010 Paper

Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 µm spectral region

J. Chen, T. Hosoda, G. Tsvid, R. Liang, D. Westerfeld, G. Kipshidze, L. Shterengas, G. Belenky

Proceedings Volume 7686, 76860S (2010) https://doi.org/10.1117/12.852208

KEYWORDS: Waveguides, Semiconductor lasers, Continuous wave operation, Gallium antimonide, Indium, Quantum wells, Cladding, Aluminum, Optical fibers

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Proceedings Article | 12 February 2008 Paper

Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 µm and 3-3.1 µm with improved room-temperature performance

Gregory Belenky, Dimitri Donetski, Leon Shterengas, Takashi Hosoda, Jianfeng Chen, Gela Kipshidze, Michail Kisin, David Westerfeld

Proceedings Volume 6900, 690004 (2008) https://doi.org/10.1117/12.754713

KEYWORDS: Waveguides, Semiconductor lasers, Quantum wells, Heterojunctions, Laser development, Aluminum, Indium gallium arsenide antimonide, Continuous wave operation, Gallium antimonide

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