Narrow-linewidth tunable diode lasers have been widely used in the field of research, but the output power of such lasers
is generally low. This paper deals with a low-cost and easily constructed diode laser amplifier. With the technique of
laser injection, the output of an external cavity diode laser (ECDL), which is locked onto the D2 line of 87Rb, is injected
into a common commercial 784nm laser diode and the injection locking is achieved. This yields a 120mW single mode
laser of which the line width is less than 1MHz, which is to be used in laser trapping of 87Rb atom. Furthermore, the
influences of the parameters, including the seed light power, the injection current and the temperature, on the operating
characteristics of the injection locked laser diode is investigated. The threshold over which the locking would be
interrupted due to the variation of the current and the temperature is also derived, which leads to the optimized operating
parameters of injection locking.
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