Mr. Jinback Park Profile

Jinback Park

at SAMSUNG Electronics Co Ltd

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 5 October 2016 Paper

Registration performance on EUV masks using high-resolution registration metrology

Steffen Steinert, Hans-Michael Solowan, Jinback Park, Hakseung Han, Dirk Beyer, Thomas Scherübl

Proceedings Volume 9985, 99851W (2016) https://doi.org/10.1117/12.2241498

KEYWORDS: Extreme ultraviolet, Photomasks, Metrology, Image registration, Overlay metrology, Deep ultraviolet, Reticles, Databases, Calibration, Lithography

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Proceedings Article | 27 May 2010 Paper

The optical CD metrology for EUV mask

Jin-Back Park, Kyoung-Yoon Bang, Dong-Gun Lee, Hae-Young Jeong, Seung-Soo Kim, Han-Ku Cho

Proceedings Volume 7748, 77481X (2010) https://doi.org/10.1117/12.868293

KEYWORDS: Extreme ultraviolet, Photomasks, Ruthenium, Data modeling, Etching, Atomic force microscopy, EUV optics, Silicon, Scanning electron microscopy, Critical dimension metrology

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Proceedings Article | 17 October 2008 Paper

Mask process monitoring with optical CD measurements for sub-50-nm

Kyung-Yoon Bang, Jin-Back Park, Jeong-Hun Roh, Dong-Hoon Chung, Sung-Yong Cho, Yong-Hoon Kim, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 7122, 71222V (2008) https://doi.org/10.1117/12.801416

KEYWORDS: Critical dimension metrology, Chromium, Scatterometry, Ultraviolet radiation, Scanning electron microscopy, Optical testing, Scatter measurement, Atomic force microscopy, Process control, Binary data

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Proceedings Article | 14 May 2007 Paper

Process latitude dependency on local photomask haze defect in 70-nm binary intensity mask

Young-Min Kang, Sung-Jin Kim, Jin-Back Park, Wook Chang, Seung-Wook Park, Jai-Soon Kim, Han-Koo Cho, Hye-Keun Oh

Proceedings Volume 6607, 660720 (2007) https://doi.org/10.1117/12.728983

KEYWORDS: Air contamination, Photomasks, Phase shifts, Electroluminescence, Binary data, Reticles, Semiconducting wafers, Critical dimension metrology, Semiconductors, Crystals

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Proceedings Article | 20 October 2006 Paper

Haze detection and haze-induced process latitude variation for low-k1 193 nm lithography

Sung-Jin Kim, Jin-Baek Park, Sung-Hyuck Kim, Hye-Young Kang, Young-Min Kang, Seung-Wook Park, Ilsin An, Hye-Keun Oh

Proceedings Volume 6349, 63492T (2006) https://doi.org/10.1117/12.685941

KEYWORDS: Air contamination, Photomasks, Critical dimension metrology, Transmittance, Spectroscopic ellipsometry, Lithography, Electroluminescence, Ellipsometry, Semiconductors, Pellicles

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Proceedings Article | 24 March 2006 Paper

The effect of transmission reduction by reticle haze formation

Sung-Jin Kim, Jai-Sun Kyoung, Jin-Back Park, Young-Hoon Kim, Seung-Wook Park, Il-Sin An, Hye-Keun Oh

Proceedings Volume 6152, 61524B (2006) https://doi.org/10.1117/12.656284

KEYWORDS: Air contamination, Photomasks, Transmittance, Critical dimension metrology, Spectroscopic ellipsometry, Ellipsometry, Reticles, Phase shifts, Binary data, Lithography

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Proceedings Article | 23 March 2006 Paper

EUV lithography simulation for the 32nm node

Eun Jin Kim, Wook Chang, Jin Back Park, Sung Jin Kim, Jong Sun Kim, Hye-Keun Oh

Proceedings Volume 6151, 61510V (2006) https://doi.org/10.1117/12.656335

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Binary data, Extreme ultraviolet, Image processing, Chromium, Optical lithography, Germanium, Near field, Refractive index

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Extreme Ultraviolet Lithography (EUVL) is one of the patterning technologies proposed for the next generation lithography (NGL) which makes pattern less than 50 nm critical dimension (CD). And EUVL uses a very short exposure wavelength of 13.4 nm. So it has many characteristic in common with optical lithography, but EUVL are different from the conventional mask applied to the projection optical lithography. Specially, industry experts generally agree that the biggest challenges and risks for the next generation of lithography systems involve the mask. In EUVL, a mask is produced by applying multilayers of molybdenum and silicon to a flat substrate. The circuit pattern is produced by applying a final EUV-absorbing metal layer and then etching away the metal to form the image of the circuit. Also, the light shining with 6 degrees oblique to mask can not get target CD easily because the shadow effect is influenced on pattern. Therefore we must understand this kind of effect before doing real process. We tried to change the structure of the mask in order to decrease this effect and to have enough process latitude for the 32 nm node. EUV mask is affected by the thickness and kind of absorber and buffer material. First, we changed the absorber material such as Cr, TaN and Ge etc. without changing the buffer material. Second, we changed the thickness of the absorber materials. We tried to minimize the shadow effect by adjusting the side wall angle of the absorber layer parallel to the oblique incidence. Additionally we considered different shapes and depth of the etched multilayer binary mask and the refilled multilayer binary mask such as the inclined side wall of the etched multilayer. In this paper, we will describe the optimized EUV mask structure for 32 nm node by studying not only the aerial image, but also the resist profile. Solid-EUV simulator of Sigma-C is used to calculate the aerial image, resist pattern profile, and the process latitude with the optimized process parameters.

Proceedings Article | 9 November 2005 Paper

Reticle haze measurement by spectroscopic elipsometry

Young-Hoon Kim, Seong-Jin Kim, Jin-Back Park, Mi-Lim Jung, Sung-Hyuck Kim, Seung-Wook Park, Jai-Sun Kyoung, Il-Sin An, Hye-Keun Oh

Proceedings Volume 5992, 59924L (2005) https://doi.org/10.1117/12.632375

KEYWORDS: Air contamination, Reticles, Photomasks, Ellipsometry, Transmittance, Inspection, Spectroscopic ellipsometry, Spectroscopy, Semiconductors, Atomic force microscopy

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Showing 5 of 8 publications

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