The production of defect-free mask blanks remains a key challenge for EUV lithography. Mask-blank inspection tools must be able to accurately detect all critical defects whilst simultaneously having the minimum possible false-positive detection rate. We have recently observed and here report the identification of bump-type buried substrate defects, that were below the detection limit of a non-actinic (i.e. non-EUV) inspection tool. Presently, the occurrence of pit-type defects, their printability, and their detectability with actinic techniques and non-actinic commercial tools, has become a significant concern.
We believe that the most successful strategy for the development of effective non-actinic mask inspection tools will involve the careful cross-correlation with actinic inspection and lithographic printing. In this way, the true efficacy of prototype inspection tools now under development can be studied quantitatively against relevant benchmarks. To this end we have developed a dual-mode actinic mask inspection system capable of scanning mask blanks for defects (with simultaneous EUV bright-field and dark-field detection) and imaging those same defects with a zoneplate microscope that matches or exceeds the resolution of EUV steppers.
The oxidation resistance of protective capping layers for extreme ultraviolet lithography (EUVL) multilayers depends on their microstructure. Differently prepared Ru-capping layers, deposited on Mo/Si EUVL multilayers, are investigated to establish their baseline structural, optical, and surface properties in an as-deposited state. The same capping layer structures are then tested for their thermal stability and oxidation resistance. The best performing Ru-capping layer structure is analyzed in detail with transmission electron microscopy (TEM). Compared to other Ru-capping layer preparations studied here, it is the only one that shows grains with preferential orientation. This information is essential to model and optimize the performance of EUVL multilayers.
We have built a visible light point-diffraction interferometer with the purpose to characterize EUVL projection optics. The interferometer operates at the wavelength of 532 nm and utilizes two identical pinhole wavefront reference sources for generation of both signal and reference wavefronts. In the simple configuration of our interferometer, the main source of system error is the pinhole reference wavefronts. It is important that the reference wavefronts are calibrated and the calibration is stable. The calibration using our refractive test optic is reproducible to better than 0.1 nm RMS. The interferometer measured the wavefront of our refractive test optic with the repeatability of 0.1nm RMS. This paper will discuss the error sources and removal of the errors with experimental results.
Since 1993, research in the fabrication of extreme ultraviolet (EUV) optical imaging systems, conducted at Lawrence Berkeley National Laboratory (LBNL) and Lawrence Livermore National Laboratory (LLNL), has produced the highest resolution optical systems ever made. We have pioneered the development of ultra-high-accuracy optical testing and alignment methods, working at extreme ultraviolet wavelengths, and pushing wavefront-measuring interferometry into the 2-20-nm wavelength range (60-600 eV). These coherent measurement techniques, including lateral shearing interferometry and phase-shifting point-diffraction interferometry (PS/PDI) have achieved RMS wavefront measurement accuracies of 0.5-1-Å and better for primary aberration terms, enabling the creation of diffraction-limited EUV optics. The measurement accuracy is established using careful null-testing procedures, and has been verified repeatedly through high-resolution imaging. We believe these methods are broadly applicable to the advancement of short-wavelength optical systems including space telescopes, microscope objectives, projection lenses, synchrotron beamline optics, diffractive and holographic optics, and more. Measurements have been performed on a tunable undulator beamline at LBNL's Advanced Light Source (ALS), optimized for high coherent flux; although many of these techniques should be adaptable to alternative ultraviolet, EUV, and soft x-ray light sources. To date, we have measured nine prototype all-reflective EUV optical systems with NA values between 0.08 and 0.30 (f/6.25 to f/1.67). These projection-imaging lenses were created for the semiconductor industry's advanced research in EUV photolithography, a technology slated for introduction in 2009-13. This paper reviews the methods used and our program's accomplishments to date.
We have built and calibrated a set of 532-nm wavelength wavefront reference sources that fill a numerical aperture of 0.3. Early data show that they have a measured departure from sphericity of less than 0.2 nm RMS (0.4 milliwaves) and a reproducibility of better than 0.05 nm rms. These devices are compact, portable, fiber-fed, and are intended as sources of measurement and reference waves in wavefront measuring interferometers used for metrology of EUVL optical elements and systems. Keys to wave front accuracy include fabrication of an 800-nm pinhole in a smooth reflecting surface as well as a calibration procedure capable of measuring axisymmetric and non-axisymmetric errors.
The azimuthal Zernike coefficients for shells of Zernike functions with shell numbers n<N may be determined by making measurements at N equally spaced rotational positions. However, these measurements do not determine the coefficients of any of the purely radial Zernike functions. Label the circle that the azimuthal Zernikes are measured in as circle A. Suppose that the azimuthal Zernike coefficients for n<N are also measured in a smaller circle B which is inside circle A but offset so that it is tangent to circle A and so that it has the center of circle A just inside its circular boundary. The diameter of circle B is thus only slightly larger than half the diameter of circle A. From these two sets of measurements, all the Zernike coefficients may be determined for n<N. However, there are usually unknown small rigid body motions of the optic between measurements. Then all the Zernike coefficients for n<N except for piston, tilts, and focus may be determined. We describe the exact mathematical algorithm that does this and describe an interferometer which measures the complete wavefront from pinholes in pinhole aligners. These pinhole aligners are self-contained units which include a fiber optic, focusing optics, and a "pinhole mirror". These pinhole aligners can then be used in another interferometer so that its errors would then be known. Physically, the measurements in circles A and B are accomplished by rotating each pinhole aligner about an aligned axis, then about an oblique axis. Absolute measurement accuracies better than 0.2 nm were achieved.
To qualify the performance of non-actinic inspection tools, a novel EUV mask inspection system has been installed at the Advanced Light Source (ALS) synchrotron facility at Lawrence Berkeley National Laboratory. Similar to the older generation actinic mask inspection tool1, the new system can operate in scanning mode, when mask blanks are scanned for defects using 13.5-nm in-band radiation to identify and map all locations on the mask that scatter a significant amount of EUV light. By modifying and optimizing beamline optics (11.3.2 at ALS) and replacing K-B focusing mirrors with a high quality Schwarzschild illuminator, the new system achieves an order of magnitude improvement on in-band EUV flux density at the mask, enabling faster scanning speed and higher sensitivity to smaller defects. Moreover, the system can also operate in imaging mode, when it becomes a zone-plate-based full-field EUV microscope with spatial resolution better than 100 nm. The microscope utilizes an off-axis setup, making it possible to obtain bright field images over a field-of-view of 5x5 um2.
We are developing polymer smoothing processes on diamond-turned (metal) and ground (metal or ceramic) substrates to reduce high and mid-spatial frequency roughness, for implementation as EUVL condenser optics. Diamond-turning or grinding can be used as relatively inexpensive processes to obtain the specified optic figure, however, the resulting surface has high-spatial roughness in the order of tens or hundreds of Angstroms, which would prohibit normal incidence operation at EUV wavelengths due to extremely low reflectance. Our polymer smoothing process reduces roughness to a few Angstroms, thus enabling normal-incidence operation. The substrate material and smoothing film have to combine a unique set of properties such as chemical compatibility, high thermal stability and low stress to be able to operate inside alternative-fuel EUVL source environments. Experimental results are presented on the development, testing and performance of these novel substrates.
Differently prepared Ru-capping layers, deposited on Mo/Si EUV multilayers, have been characterized using a suite of metrologies to establish their baseline structural, optical, and surface properties in as-deposited state. The same capping layer structures were tested for their thermal stability and oxidation resistance. Post-mortem characterization identified changes due to accelerated tests. The best performing Ru-capping layer structure was studied in detail with transmission electron microscopy to identify the grain microstructure and texture. This information is essential for modeling and performance optimization of EUVL multilayers.
The production of defect-free mask blanks, and the development of techniques for inspecting and qualifying EUV mask blanks, remains a key challenge for EUV lithography. In order to ensure a reliable supply of defect-free mask blanks, it is necessary to develop techniques to reliably and accurately detect defects on un-patterned mask blanks. These inspection tools must be able to accurately detect all critical defects whilst simultaneously having the minimum possible false-positive detection rate.
There continues to be improvement in high-speed non-actinic mask blank inspection tools, and it is anticipated that these tools can and will be used by industry to qualify EUV mask blanks. However, the outstanding question remains one of validating that non-actinic inspection techniques are capable of detecting all printable EUV defects.
To qualify the performance of non-actinic inspection tools, a unique dual-mode EUV mask inspection system has been installed at the Advanced Light Source (ALS) synchrotron at Lawrence Berkeley National Laboratory. In high-speed inspection mode, whole mask blanks are scanned for defects using 13.5-nm wavelength light to identify and map all locations on the mask that scatter a significant amount of EUV light. In imaging, or defect review mode, a zone plate is placed in the reflected beam path to image a region of interest onto a CCD detector with an effective resolution on the mask of 100-nm or better. Combining the capabilities of the two inspection tools into one system provides the unique capability to determine the coordinates of native defects that can be used to compare actinic defect inspection with visible light defect inspection tools under commercial development, and to provide data for comparing scattering models for EUV mask defects.
The success of recent static printing experiments at Lawrence Berkeley National Laboratory’s Advanced Light Source (ALS) using the EUV LLC Engineering Test Stand (ETS) Set-2 optic has demonstrated the utility of synchrotron-based EUV exposure stations. Although not viable light sources for commercial lithography, synchrotrons provide clean, convenient, and extremely flexible sources for developmental microfield lithography. The great flexibility of synchrotron-based illumination arises from the fact that such sources facilitate active coherence reduction, thus enabling the coherence function, or pupil fill, to be actively sculpted in real time.
As the commercialization of EUV progresses, the focus of developmental EUV lithography is shifting from low numerical aperture (NA) tools such as the 0.1-NA ETS to higher-NA tools such as the 0.3-NA Micro Exposure Tool (MET). To support printing with MET optics at the ALS, a new printing station has been developed, relying on a scanning illuminator to provide programmable coherence (pupil-fill) control. The illuminator is designed to operate up to a coherence factor (s) of 1 and support the full 200′600 design printed field of view. In addition to a new illuminator design, new focus sensing and dose-control systems have also been implemented. Here we describe the MET printing capabilities in detail and present preliminary printing results with the Sematech Set-2 MET optic.
Full-field imaging with a developmental projection optic box (POB 1) was successfully demonstrated in the alpha tool Engineering Test Stand (ETS) last year. Since then, numerous improvements, including laser power for the laser-produced plasma (LPP) source, stages, sensors, and control system have been made. The LPP has been upgraded from the 40 W LPP cluster jet source used for initial demonstration of full-field imaging to a high-power (1500 W) LPP source with a liquid Xe spray jet. Scanned lithography at various laser drive powers of >500 W has been demonstrated with virtually identical lithographic performance.
The EUV Engineering Test Stand (ETS) has demonstrated the printing of 100-nm-resolution scanned images. This milestone was first achieved while the ETS operated in an initial configuration using a low power laser and a developmental projection system, PO Box 1. The drive laser has ben upgraded to a single chain of the three-chain Nd:YAG laser developed by TRW. The result in exposure time is approximately 4 seconds for static exposures. One hundred nanometer dense features have been printed in step-and-scan operation with the same image quality obtained in static printing. These experiments are the first steps toward achieving operation using all three laser chains for a total drive laser power of 1500 watts. In a second major upgrade the developmental wafer stage platen, used to demonstrate initial full-field imaging, has been replaced with the final low-expansion platen made of Zerodur. Additional improvements in the hardware and control software have demonstrated combined x and jitter from 2 to 4 nm RMS Over most of the wafer stage travel range, while scanning at the design scan speed of 10 mm/s at the wafer. This value, less than half of the originally specified jitter, provides sufficient stability to support printing of 70 nm features as planned, when the upgraded projection system is installed. The third major upgrade will replace PO Box 1 with an improved projection system, PO Box 2, having lower figure error and lower flare. In addition to these upgrades, dose sensors at the reticle and wafer planes and an EUV- sensitive aerial image monitor have been integrated into the ETS. This paper reports on ETS system upgrades and the impact on system performance.
Development of manufacturing infrastructure is required to ensure a commercial source of mask substrates for the timely introduction of EUVL. Improvements to the low thermal expansion materials that compose the substrate have been made, but need to be scaled to production quantities. We have been evaluating three challenging substrate characteristics to determine the state of the infrastructure for the finishing of substrates. First, surface roughness is on track and little risk is associated with achieving the roughness requirement as an independent specification. Second, with new flatness-measuring equipment just coming on line, the vendors are poised for improvement toward the SEMI P37 flatness specification. Third, significant acceleration is needed in the reduction of defect levels on substrates. The lack of high-sensitivity defect metrology at the vendors' sites is limiting progress in developing substrates for EUVL.
The Engineering Test Stand (ETS) is an EUV lithography tool designed to demonstrate full-field EUV imaging and provide data required to accelerate production-tool development. Early lithographic results and progress on continuing functional upgrades are presented and discussed. In the ETS a source of 13.4 nm radiation is provided by a laser plasma source in which a Nd:YAG laser beam is focused onto a xenon- cluster target. A condenser system, comprised of multilayer-coated and grazing incidence mirrors, collects the EUV radiation and directs it onto a reflecting reticle. The resulting EUV illumination at the reticle and pupil has been measured and meets requirements for acquisition of first images. Tool setup experiments have been completed using a developmental projection system with (lambda) /14 wavefront error (WFE), while the assembly and alignment of the final projection system with (lambda) /24 WFE progresses in parallel. These experiments included identification of best focus at the central field point and characterization of imaging performance in static imaging mode. A small amount of astigmatism was observed and corrected in situ, as is routinely done in advanced optical lithographic tools. Pitch and roll corrections were made to achieve focus throughout the arc-shaped field of view. Scan parameters were identified by printing dense features with varying amounts of magnification and skew correction. Through-focus scanned imaging results, showing 100 nm isolated and dense features, will be presented. Phase 2 implementation goals for the ETS will also be discussed.
Detailed thermal expansion measurements and internal homogeneity measurements of the glass-ceramic material Zerodur were undertaken to examine its usefulness for EUVL. Repeat measurements on 100-mm long samples from three castings exhibit an expansion of approximately 12 +/- 2 ppb/K 2 (sigma) in the temperature range of interest for EUVL, corresponding to Class C of the draft SEMI 3148 standard. Internal homogeneity measurements reveal extremely small refractive index variations, suggesting comparably small compositional variations. This in turn is viewed as a necessary but not sufficient condition for high CTE uniformity, a factor required by EUVL applications.
One of the most critical tasks in the development of extreme ultraviolet lithography (EUVL) is the accurate deposition of reflective multilayer coatings for the mirrors comprising the EUVL tool. The second set (Set 2) of four imaging optics for an alpha-class EUVL system has been coated successfully. All four mirrors (M1, M2, M3, M4) were Mo/Si- coated during a single-deposition run with a production- scale DC-magnetron sputtering system. Ideally, the multilayer coatings should not degrade the residual wavefront error of the imaging system design. For the present EUVL camera, this requirement is equivalent to depositing multilayer coatings that would add a figure error of less than 0.11 nm rms. In addition, all mirrors should be matched in centroid wavelength, in order to insure maximum throughput of the EUVL tool. In order to meet these constraints, the multilayer deposition process needs to be controlled to atomic precision. EUV measurements of the coated mirrors determined that the added figure errors due to the multilayer coatings are 0.032 nm rms (M1), 0.037 nm rms (M2), 0.040 nm rms (M3) and 0.015 nm rms (M4), well within the aforementioned requirement of 0.11 nm rms. The average wavelength among the four projection mirrors is 13.352 nm, with an optic-to-optic matching of 1(sigma) =0.010 nm. This outstanding level of wavelength matching produces 99.3% of the throughput of an ideally matched four-mirror system. Peak reflectances are 63.8% (M1), 65.2% (M2), 63.8% (M3) and 66.7% (M4). The variation in reflectance values between the four optics is consistent with their high frequency substrate roughness. It is predicted that the multilayer coatings will not introduce any aberrations in the lithographic system performance, for both static and scanned images of 70 nm - dense features.
The Engineering Test Stand (ETS) is a developmental lithography tool designed to demonstrate full-field EUV imaging and provide data for commercial-tool development. In the first phase of integration, currently in progress, the ETS is configured using a developmental projection system, while fabrication of an improved projection system proceeds in parallel. The optics in the second projection system have been fabricated to tighter specifications for improved resolution and reduced flare. The projection system is a 4-mirror, 4x-reduction, ring-field design having a numeral aperture of 0.1, which supports 70 nm resolution at a k1 of 0.52. The illuminator produces 13.4 nm radiation from a laser-produced plasma, directs the radiation onto an arc-shaped field of view, and provides an effective fill factor at the pupil plane of 0.7. The ETS is designed for full-field images in step-and-scan mode using vacuum-compatible, magnetically levitated, scanning stages. This paper describes system performance observed during the first phase of integration, including static resist images of 100 nm isolated and dense features.
A model has been developed to predict the cost of extreme ultraviolet lithography (EUVL) masks. The mask blank for EUVL consists of a low thermal expansion material substrate having a square photomask form factor and is coated with reflective Mo/Si multilayers. Absorber layers are deposited on the multilayer and patterned. EUVL mask patterning will use evolutionary improvements in mask patterning and repair equipment. One of the challenges in implementing EUVL is to economically fabricate multilayer-coated mask blanks with no printable defects. The model of mask cost assigns yield and time required for each of the steps in fabricating EUVL masks from purchase of a polished substrate to shipment of a patterned mask. Data from present multilayer coating processes and present mask patterning processes are used to estimate the future cost of EUVL masks. Several of the parameters that significantly influence predicted mask cost are discussed in detail. Future cost reduction of mask blanks is expected from learning on substrate fabrication, improvements in low defect multilayer coating to consistently obtain <0.005 defects cm-2, and demonstration of multilayer smoothing which reduces the printability of substrate defects. The model predicts that the price range for EUVL masks in production will be S30-40K, which is comparable to the price of complex phase shift masks needed to use optical lithography for 70 nm critical dimension patterning.
Minimizing image placement errors due to thermal distortion of the mask is a key requirement for qualifying EUV Lithography as a Next Generation Lithography (NGL). Employing Low Thermal Expansion Materials (LTEMs) for mask substrates is a viable solution for controlling mask thermal distortion and is being investigated by a wide array of researchers, tool makers, photomask suppliers, and material manufacturers. Finite element modeling has shown that an EUVL mask with a Coefficient of Thermal Expansion (CTE) of less than 20 ppb/K will meet overlay error budgets for <EQ 70 nm lithography at a throughput of 80 wafers per hour. In this paper, we describe the functional differences between today's photomask and EUVL masks; some of these differences are EUVL specific, while others are natural consequences of the shrinking critical dimension. We demonstrate that a feasible manufacturing pathway exists for Low Thermal Expansion Material (LTEM) EUVL masks by fabricating a wafer-shaped LTEM mask substrate using the same manufacturing steps as for fabricating Si wafers. The LTEM substrate was then coated with Mo/Si multilayers, patterned, and printed using the 10X Microstepper. The images were essentially indistinguishable from those images acquired from masks fabricated from high quality silicon wafers as substrates. Our observations lend further evidence that an LTEM can be used as the EUVL mask substrate material.
The Engineering Test Stand (ETS) is an EUV laboratory lithography tool. The purpose of the ETS is to demonstrate EUV full-field imaging and provide data required to support production-tool development. The ETS is configured to separate the imaging system and stages from the illumination system. Environmental conditions can be controlled independently in the two modules to maximize EUV throughput and environmental control. A source of 13.4 nm radiation is provided by a laser plasma source in which a YAG laser beam is focused onto a xenon-cluster target. A condenser system, comprised of multilayer-coated mirrors and grazing-incidence mirrors, collects the EUV radiation and directs it onto a reflecting reticle. A four-mirror, ring-field optical system, having a numerical aperture of 0.1, projects a 4x-reduction image onto the wafer plane. This design corresponds to a resolution of 70 nm at a k1 of 0.52. The ETS is designed to produce full- field images in step-and-scan mode using vacuum-compatible, one-dimension-long-travel magnetically levitated stages for both reticle and wafer. Reticle protection is incorporated into the ETS design. This paper provides a system overview of the ETS design and specifications.
The mask is deemed one of the areas that require significant research and development in EUVL. Silicon wafers will be used for mask substrates for an alpha-class EUVL exposure tool due to their low-defect levels and high quality surface finish. However, silicon has a large coefficient of thermal expansion that leads to unacceptable image distortion due to absorption of EUV light. A low thermal expansion glass or glass-ceramic is likely to be required in order to meet error budgets for the 70 nm node and beyond. Since EUVL masks are used in reflection, they are coated with multilayers prior to patterning. Surface imperfections, such as polishing marks, particles, scratches, or digs, are potential nucleation sites for defects in the multilayer coating, which could result in the printed defects. Therefore we are accelerating developments in the defect reduction and surface finishing of low thermal expansion mask substrates in order to understand long-term issues in controlling printable defects, and to establish the infrastructure for supplying masks. In this paper, we explain the technical requirements for EUVL mask substrates and describe our efforts in establishing a SEMI standard for EUVL masks. We will also report on the early progress of our suppliers in producing low thermal-expansion mask substrates for our development activities.
The capabilities of the EUV 10x microstepper have been substantially improved over the past year. The key enhancement was the development of a new projection optics system with reduced wavefront error, reduced flare, and increased numerical aperture. These optics and concomitant developments in EUV reticles and photoresists have enabled dramatic improvements in EUV imaging, illustrated by resolution of 70 nm dense lines and spaces (L/S). CD linearity has been demonstrated for dense L/S over the range 100 nm to 80 nm, both for the imaging layer and for subsequent pattern transfer. For a +/- 10 percent CD specification, we have demonstrated a process latitude of +/- micrometers depth of focus and 10 percent dose range for dense 100 nm L/S.
Two new Schwarzschild cameras have been fabricated for the EUV 10x microstepper. The surface topography of the mirrors was characterized over the full range of spatial frequencies both before and after multilayer coating. EUV scattering from the individual mirrors was measured and compared with the surface profilometry. A knife-edge test was used to directly measure the flare of the assembled cameras. The flare measured in this way is in excellent agreement with the contrast of isolated printed lines and with the point spread function of the camera as determined by EUV interferometry. The measured flare of the camera is also in good agreement with the flare calculated from the combined surface profile measurements of the individual mirrors. Consistent with the improvements made in the surface finish of the mirror substrates, a significant reduction in the flare is observed as compared with previously existing cameras.
EUV lithography (EUVL) is a leading candidate as a stepper technology for fabricating the '0.1 micrometers generation' of microelectronic circuits. EUVL is an optical printing technique qualitatively similar to DUV lithography (DUVL), except that 11-13 nm wavelength light is used instead of 193-248nm. The feasibility of creating 0.1 micrometers features has been well-established using small-field EUVL printing tools, and development efforts are currently underway to demonstrate that cost-effective production equipment can be engineered to perform full-width ring-field imaging consistent with high wafer throughput rates. Ensuring that an industrial supplier base will be available for key components and subsystems is crucial to the success of EUVL. In particular, the projection optics are the heart of the EUVL imaging system, yet they have figure and finish specifications that are beyond the state-of-the-art in optics manufacturing. Thus it is important to demonstrate that industry will be able to fabricate and certify these optics commensurate with EUVL requirements. Indeed, the goal of this paper is to demonstrate that procuring EUVL projection optical substrates is feasible. This conclusion is based on measurements of both commercially-available and developmental substrates. The paper discusses EUVL figure and finish specifications, followed by examples of ultrasmooth and accurate surfaces, and concludes with a discussion of how substrates are measured and evaluated.
LLNL is collaborating with the Center for Optics Manufacturing and the American Precision Optics Manufacturers Association to optimize bound diamond ring tools for the spherical generation of high quality optical surfaces. An important element of this work is establishing an experimentally-verified link between tooling properties and workpiece quality indicators such as roughness, subsurface damage, and removal rate. In this paper, we report on a standardized methodology for assessing ring tool performance and its preliminary application to a set of commercially available wheels. Our goals are to 1) assist optics manufacturers (users of the ring tools) in evaluating tools and in assessing their applicability for a given operation, and 2) provide performance feedback to wheel manufacturers to help optimize tooling for the optics industry. Our paper includes measurements of wheel performance for three 2-4 micron diamond bronze-bond wheels that were supplied by different manufacturers to nominally-identical specifications. Preliminary data suggests that the difference in performance levels among the wheels were small.
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