The EUV lithography started to be used for the high-volume manufacturing of the advanced semiconductor devices such as logic 7nm device and DRAM 1a device by using the conventional EUV masks and blanks with Ta absorber. We developed the new EUV masks and blanks suitable for DRAM 1a and beyond. This new EUV masks and blanks that we developed employs the unique absorber material in order to realize the higher EUV scanner throughput than the conventional EUV masks and blanks, which we think one of advantages of the new EUV masks and blanks. On the other hand, this new EUV masks and blanks can use the similar mask fabrication process to the conventional EUV masks and blanks that we have experiences. In this paper, the fundamental properties of this unique absorber material are reported such as the dry etching performance, the durability to the wet cleaning process and the hydrogen durability. The mask pattern fidelity and the EUV scanner performance are also reported in comparison with the conventional EUV mask and blanks to show the advantage of the new EUV mask and blanks.
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