Dr. JongSun Kim Profile

Dr. JongSun Kim

at Hanyang Univ

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Author

Publications (4)

Proceedings Article | 22 March 2007 Paper

32-nm pattern collapse modeling with radial distance and rinse speed

Jong-Sun Kim, Wook Chang, Seoung-Wook Park, Hye-Keun Oh, Suk-Joo Lee, Sung-Hyuk Kim

Proceedings Volume 6519, 65193Y (2007) https://doi.org/10.1117/12.712220

KEYWORDS: Liquids, Semiconducting wafers, Mathematical modeling, Capillaries, Lithography, Electronics, Chemically amplified resists, Optical lithography, Applied physics, Semiconductors

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Proceedings Article | 29 March 2006 Paper

Reflow modeling for elongated contact hole shape

Ji-Eun Lee, Dai-Gyoung Kim, Kang Baek Kim, Mi-Rim Jung, Hye-Young Kang, Jong-Sun Kim, Joo-Yoo Hong, Hye-Keun Oh, Jun-Tack Park

Proceedings Volume 6153, 61533T (2006) https://doi.org/10.1117/12.656286

KEYWORDS: Photoresist processing, Interfaces, Critical dimension metrology, Glasses, Resolution enhancement technologies, Optical proximity correction, Thin films, Mathematical modeling, Lithography, Motion models

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Proceedings Article | 23 March 2006 Paper

EUV lithography simulation for the 32nm node

Eun Jin Kim, Wook Chang, Jin Back Park, Sung Jin Kim, Jong Sun Kim, Hye-Keun Oh

Proceedings Volume 6151, 61510V (2006) https://doi.org/10.1117/12.656335

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Binary data, Extreme ultraviolet, Image processing, Chromium, Optical lithography, Germanium, Near field, Refractive index

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Extreme Ultraviolet Lithography (EUVL) is one of the patterning technologies proposed for the next generation lithography (NGL) which makes pattern less than 50 nm critical dimension (CD). And EUVL uses a very short exposure wavelength of 13.4 nm. So it has many characteristic in common with optical lithography, but EUVL are different from the conventional mask applied to the projection optical lithography. Specially, industry experts generally agree that the biggest challenges and risks for the next generation of lithography systems involve the mask. In EUVL, a mask is produced by applying multilayers of molybdenum and silicon to a flat substrate. The circuit pattern is produced by applying a final EUV-absorbing metal layer and then etching away the metal to form the image of the circuit. Also, the light shining with 6 degrees oblique to mask can not get target CD easily because the shadow effect is influenced on pattern. Therefore we must understand this kind of effect before doing real process. We tried to change the structure of the mask in order to decrease this effect and to have enough process latitude for the 32 nm node. EUV mask is affected by the thickness and kind of absorber and buffer material. First, we changed the absorber material such as Cr, TaN and Ge etc. without changing the buffer material. Second, we changed the thickness of the absorber materials. We tried to minimize the shadow effect by adjusting the side wall angle of the absorber layer parallel to the oblique incidence. Additionally we considered different shapes and depth of the etched multilayer binary mask and the refilled multilayer binary mask such as the inclined side wall of the etched multilayer. In this paper, we will describe the optimized EUV mask structure for 32 nm node by studying not only the aerial image, but also the resist profile. Solid-EUV simulator of Sigma-C is used to calculate the aerial image, resist pattern profile, and the process latitude with the optimized process parameters.

Proceedings Article | 6 May 2005 Paper

Line width variation with absorber thickness in extreme ultraviolet lithography

Young-Doo Jeon, Min-Ki Choi, Eun-Jin Kim, Jong-Sun Kim, Hye-Keun Oh

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600406

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Germanium, Chromium, Reflectivity, Near field, Absorption, Extreme ultraviolet, Multilayers, Lithography

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