VECSELs have already been successfully used for quantum experiments based on ion and atom systems, where the main desired features are narrow linewidth, low noise, and stability. Here we are exposing the broad tuning capability of the VEXLUM VALO single-frequency laser platform for the resonant excitation of recently developed GaSb-based semiconductor quantum dots, which can provide single-photon emission in the 3rd telecom widow. The VECSEL allows direct excitation of a single quantum dot and elimination of complex charge relaxation paths in the surrounding semiconductor matrix, thus improving the charge stability of the quantum dot.
We present state of the art hybrid integrated GaSb/Si3N4 light sources towards building miniaturized and affordable sensors. Presented laser configurations include: 1) Widely tunable 2.7 µm wavelength laser with 170 nm continuous tuning range. 2) Discretely tunable laser for simultaneously multiwavelength spectroscopy of S2H, H2O and CO2-gasses with greatly simplified calibration procedure compared to conventional tunable lasers. 3) Lasers with ultra-pure spectrum at 2 µm wavelength reaching down to 6 kHz-linewidth towards use in atom spectroscopy or to seed advanced lasers. Used configurations and material systems are wavelength agnostic in 1.9 – 3 µm range and therefore capable to capture wide range of applications. We discuss about applications in environmental and industrial gas sensing and detection of biomarkers such as lactate, urea and glucose.
Solid-state single and entangled photon emitters linked coherently over long distances with optical fibers enable a new generation of quantum-based communications networks. Currently, epitaxial semiconductor quantum dots (QDs) pave the way as a scalable approach for fabricating deterministic non-classical light sources that can be integrated with other photonic or electronic components in miniaturized form. Here, we present a new quantum material system based on GaSb QDs formed by filling droplet-etched nanoholes [1,2], a technique which has been previously used for the state-of-the-art single- and entangled-photon sources in the GaAs-based materials emitting at wavelengths shorter than 800 nm [3-6]. We show that while the GaSb QDs exhibit high homogeneity and small fine structure splitting similarly to their GaAs counterparts, they also enable single-photon emission in the 3rd telecom window [7] with prospects for extending towards 2µm. These properties make them ideal candidates for quantum photonic applications requiring compatibility with Si-photonics and fiber-based telecom.
[1] J. Hilska et al. Cryst. Growth Des. 21 1917−1923, 2021
[2] A. Chellu et al. APL Materials 9, pp
We present a GaSb based micro transfer printed (µTP) gain devices for integration with a 3 µm silicon-on-insulator platform and demonstrate integration to a reflective distributed Bragg reflector (DBR) forming a functional single frequency external cavity laser at 1960 nm. Previously used on InP and GaAs, we transferred the technique on GaSb, that allows the expansion of applications from telecommunication to sensing, such as environmental gas detection. In addition, we introduce a test device series and a methodology to measure and analyze the effects µTP design specific features, such as etched facets, to assess the transfer print process quality.
This research focuses on strain-free GaSb/AlGaSb quantum dots (QDs) grown via local droplet etching (LDE) for their potential in quantum photonic applications. These QDs exhibit excitonic emission in the telecom S-band with a narrow ensemble emission linewidth. Through theoretical modeling in addition to previous photoluminescence experiments, the study investigates the electronic band structure, dipole transitions, and dimensions of the GaSb/AlGaSb QDs. Key findings include insights into the indirect-direct bandgap crossover based on QD dimensions and the comparison of dipole transitions with photoluminescence measurements. The results contribute to the practical integration of these QDs in quantum photonic devices and fiber optics-based quantum key distribution networks.
We present for the first time transfer printable GaSb laser diode and semiconductor optical amplifier coupons. Device coupons show excellent device characteristics with little or no penalty associated to specific integration features required by transfer print process. Transferring of devices on silicon substrate containing a waveguide structure is shown and preliminary results from transferred devices show CW lasing around 2 µm wavelength and light coupling to a waveguide on integrated photonic circuit. The fabrication methodology enables a wide variety of GaSb devices towards highly integrated photonics applications in environmental sensing, bio marker identification and industrial monitoring.
We demonstrate a hybrid GaSb/Si3N4 Vernier laser in an edge-coupled configuration emitting around 2.55 µm, consisting of a GaSb-based reflective semiconductor amplifier, and a reflective Si3N4 circuit, consisting of two resistively tunable ring resonators in a loop mirror towards Vernier type operation. The hybrid laser exhibited a threshold current of 190 mA, and a maximum output power of 6.4 mW around 325 mA injection current. Moreover, the hybrid laser showed a broad tuning range of 170 nm, with an access to wavelengths from 2474 nm to 2644 nm, and a > 1 mW output power across the whole tuning band.
Development of integrated photonics enables unprecedented scaling of optical systems with small and cost-effective architectures, which is instrumental for the penetration of photonics solutions to a vast variety of new applications. To this end, mid-IR integrated photonics is emerging as a key technology for advanced sensing applications. We demonstrate the first DBR lasers exploiting on-chip integration of GaSb gain elements and silicon photonics circuit for wavelength conditioning. The hybrid integrated DBR laser delivers a maximum power of 6.0mW in CW mode at room temperature, with a narrow spectrum around 2µm. The integration scheme enables wavelength scaling beyond 3 µm.
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