Micro-transfer printing of thin-film lithium niobate (TFLN), as a backend integration method, enables selective and localized placement of TFLN to silicon platform, facilitating the creation of complex, multi-material systems that combine lithium niobate with other components. In this study, we investigate the transfer printing technique for TFLN. We present experimental results from hybrid silicon-LN devices created using this method, including micro-transfer printed ring modulators, photonics crystal (PhC) modulators, and Bragg Grating modulators, among others.
In this paper, we demonstrate a high-efficiency, short-cavity heterogeneously integrated C-band DFB laser on a Si waveguide realized using adhesive bonding. First, simulation results regarding the integrated cavity design are discussed. In order to decrease the optical loss inside the cavity, we designed a configuration where the optical mode inside the laser cavity is predominantly confined to the Si waveguide underneath. Then, the fabrication technology of the demonstrated device is explained. Finally, we discuss the measured static and dynamic characteristics of the integrated laser. Up to 13% wall plug efficiency is achieved for a 200 μm long DFB laser diode at 20 ⁰C. Up to two times 6 mW of optical power is coupled into the silicon waveguide and more than 44 dB side-mode suppression ratio is obtained. In addition, the dynamic characteristics of the device are demonstrated by non-return-to-zero on-off keying modulation at 20 Gb/s and the transmission over a 2 km long optical fiber.
New circuit architectures and technologies for high-speed electronic and photonic integrated circuits are essential to realize optical interconnects with higher symbol rate. As a consequence of the increasing speeds, close integration and co-design of photonic and electronic chips have become a necessity to realize high-performance transceivers with novel packaging approaches. Extensive co-design also enables the design of new electro-optic architectures to create and process optical signals more efficiently. This paper and presentation will illustrate a number of recent developments of application-specific high-speed electro-optic transceiver circuits including e.g. broadband driver amplifiers, transimpedance amplifiers, analog equalizers and multiplexer circuits for signal generation and reception at 100 Gbaud and beyond. The basic concepts and architectures, technological aspects, design challenges and trade-offs will be discussed.
High-speed electronic integrated circuits are essential to the development of new fiber-optic communication systems. As a consequence of the increasing speeds and multi-channel operation, close integration and co-design of photonic and electronic devices have become a necessity to realize high-performance sub-systems. Such co-design on the other hand also enables the design of new electro-optic architectures to create and process multi-level optical signals. This presentation will illustrate a number of recent and ongoing developments in IDLab, an imec research group, from various H2020 projects with a focus on application-specific high-speed electronic transceiver circuits such as driver amplifiers and transimpedance amplifiers (TIAs).
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