A complaint mechanism to extend resolution in the Fourier Transform Spectroscopy (FTS) technique has been designed,
fabricated and tested. The mechanism based on the complaint mechanical design strategy has not mobile parts and was
fabricated in MEMS technology in a Bosch Process. When this mechanism is used to displacing the mobile mirror in a
FTS setup, an extended range travel for the reference mirror is achieved; thus, the optical path difference and hence the
resolving power of the FTS system is increased.
The fabricated device has dimensions of 5400x4200x400 Microns at the large, width and thickness respectively, with an
aspect ratio about 10. Numerical simulations with ANSYS Software were developed to get the Stress limits and the input
and output displacements, the mechanical gain and the resonance frequency of the device.
Experimental results in both the forced and dynamical regime are presented. It is found that in the dynamical regime
when the device is operated at its resonance frequency it exhibits a higher mechanical gain several times its gain in the
forced regime.
Memristors, usually in the form metal/metal-oxide/metal, have attracted much attention due to their potential application
for non-volatile memory. Their simple structure and ease of fabrication make them good candidates for dense memory
with projections of 22 terabytes per wafer. Excellent switching times of ~10 ns, memory endurance of >109 cycles, and
extrapolated retention times of >10 yrs have been reported. Interestingly, memristors use the migration of ions to change
their resistance in response to charge flow, and can therefore measure and remember the amount of current that has
flowed. This is similar to many MEMS devices in which the motion of mass is an operating principle of the device.
Memristors are also similar to MEMS in the sense that they can both be resistant to radiation effects. Memristors are
radiation tolerant since information is stored as a structural change and not as electronic charge. Functionally, a MEMS
device's sensitivity to radiation is concomitant to the role that the dielectric layers play in the function of the device. This
is due to radiation-induced trapped charge in the dielectrics which can alter device performance and in extreme cases
cause failure. Although different material systems have been investigated for memristors, SnO2 has received little
attention even though it demonstrates excellent electronic properties and a high resistance to displacement damage from
radiation due to a large Frenkel defect energy (7 eV) compared its bandgap (3.6 eV). This talk discusses recent research
on SnO2-based memristors and the potential synergies of integrating memristors with MEMS.
Hydraulic induced fracturing (HIF) in oil wells is used to increase oil productivity by making the subterranean terrain
more deep and permeable. In some cases HIF connects multiple oil pockets to the main well. Currently there is a need to
understand and control with a high degree of precision the geometry, direction, and the physical properties of fractures.
By knowing these characteristics (the specifications of fractures), other drill well locations and set-ups of wells can be
designed to increase the probability of connection of the oil pockets to main well(s), thus, increasing productivity. The
current state of the art of HIF characterization does not meet the requirements of the oil industry. In Mexico, the
SENER-CONACyT funding program recently supported a three party collaborative effort between the Mexican
Petroleum Institute, Schlumberger Dowell Mexico, and the Autonomous University of Juarez to develop a sensing
scheme to measure physical parameters of a HIF like, but not limited to pressure, temperature, density and viscosity. We
present in this paper a review of HIF process, its challenges and the progress of sensing development for down hole
measurement parameters of wells for the Chicontepec region of Mexico.
An investigation study concerning positioning, alignment, bonding and packaging of optical fibers for interfacing with
optical MEMS devices is being reviewed in this paper. The study includes a review of techniques and critical issues for
optical fiber positioning, alignment, bonding, optical improvements, and coupling and interfacing through micro-lenses
and waveguides. Also, we present a packaging design structure for hermetic sealing of optical MEMS devices requiring
interfacing through optical fibers which considers aspects such as processes, assemble schemes and bonding techniques
for Optical Fibers, which are briefly reviewed in this work. This packaging design considers the following conditions:
hermeticity of the MEMS devices, optical fiber and MEMS die alignment and positioning, assembly process, and Simachined
fixturing design for final assembly and positioning.
This paper presents a novel method for surface micro-machining of pin-jointed actuators using only two active polySi layers. An alternative sacrificial layer deposition and etching sequence is proposed in order to achieve the linkage construction. The implementation of a four-level profile in the first sacrificial layer is a key factor to significantly reduce topography issues when depositing subsequent layers. Adding to this are some design considerations to further smooth the surface topography irregularities so that a reasonable clearance between the first and second mechanically active layers is obtained. As a result, the need of a planarization process step is foreseen to be avoided. The main advantages of the proposed construction technology are process simplification and standardization conditions in key deposit steps.
Conference Committee Involvement (1)
Device and Process Technologies for Microelectronics, MEMS, and Photonics
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.