As advanced photolithography extends the ability to print feature sizes below the 100 nm technology node, various reticle enhancement techniques (RET) are being employed to improve resolution. An example of RET is the alternating phase shift mask (APSM), which currently challenges the ability of conventional repair techniques to repair even the most basic reticle defect. The phase shifting quartz bump is one defect type critical to the performance of APSM technology masks. These defects on the APSM reticle are caused by imperfections in the resist image during processing, resulting in a localized under or over etch of the quartz substrate. The integrated application of gas assisted etch (GAE), focused ion beam (FIB) reticle repair, and atomic force microscopy (AFM), provides a comprehensive solution for advanced reticle defect repair and characterization. Ion beam repair offers superior accuracy and precision for removal without significant damage to the underlying or adjacent quartz. The AFM technique provides quantitative measurement of 3D structures, including those associated with alternating phase shifters etched into quartz as well as embedded shifters. In the work presented in this paper, quartz bump defects were pre-scanned on an AFM tool and proprietary software algorithms were used to generate defect image and height map files for transfer to the FIB reticle repair tool via a network connection. The FIB tool then used these files to selectively control the ion dose during the corresponding quartz defect repair. A 193 nm APSM phase shift photomask with programmed defects in 400 nm line and space pattern was repaired using an FEI Stylus NanoProfilometer (SNP) and a FEI Accura 850 focus ion beam (FIB) tool. Using the APSM FIB repair method, the transmittance evaluated from 193 nm AIMS at the repair area was more than 90% without post-processing.
As advanced photolithography extends the ability to print feature sizes below the 100 nm technology node, various reticle enhancement techniques (RET) are being employed to improve resolution. An example of RET is the alternating phase shift mask (APSM), which currently challenges the ability of conventional repair techniques to repair even the most basic reticle defect. The phase shifting quartz bump is one defect type critical to the performance of APSM technology masks. These defects on the APSM reticle are caused by imperfections in the resist image during processing, resulting in a localized under or over etch of the quartz substrate. The integrated application of gas assisted etch (GAE), focused ion beam (FIB) reticle repair, and atomic force microscopy (AFM), provide a comprehensive solution for advanced reticle defect repair and characterization. Ion beam repair offers superior accuracy and precision for removal without significant damage to the underlying or adjacent quartz. The AFM technique provides quantitative measurement of 3D structures, including those associated with alternating phase shifters etched into quartz as well as embedded shifters. In the work presented in this paper, quartz bum defects were pre-scanned on an AFM tool and proprietary software algorithms were used to generate defect image and height map files for transfer to the FIB reticle repair tool via a network connection. The FIB tool then used these files to control selectively the ion dose during the corresponding quartz defect repair. A 193 nm APSM phase shift photomask with programmed defects in 400 nm line and space pattern was repaired using an FEI Stylus NanoProfilometer (SNP) and a FEI Accura 850 focus ion beam (FIB) tool. Using the APSM FIB repair method, the transmittance evaluated from 193 nm AIMS at the repair area was more than 90% without post-processing.
In this paper, we will be discussing the repair of 193 nm Molybdenum Silicide (MoSiON) phase-shift masks by Focused Ion Beam (FIB) technology. Development of a next generation FIB column has allowed greater resolution of photomask patterns enabling efficient repair of 193 nm MoSiON phase-shift mask defects in patterns as small as 480 nm on the mask. The capabilities of this next generation VisIONT ion beam column achieve enhanced imaging at lower ion beam currents, minimizing damage to the substrate material while improving repair profiles. Both clear defects and opaque defects were investigated.
Binary chrome masks with optical proximity corrections (OPC) will be used to produce devices for the 0.18 micron generation. The complex shapes of OPC features make automated inspection and repair difficult. Specifically it is difficult to recognize what features are defective and what they are supposed to look like. One feature that can repair such defects is Pattern Copy. Pattern Copy is a powerful image- processing program that is used to repair defects on complex patterns. This is done by taking an image of the defective area and comparing it to an image of a known good area. These two images are subtracted and the result is a bit map of the repair that must be performed. In this study, a series of repairs on OPC features was made with Pattern Copy and other techniques. These repairs were performed on 0.18 micron OPC features that had CD errors, defects in assist bars and clear and opaque extensions. Some repairs were deliberately biased to evaluate the effect on printability. The repaired mask was printed at 248 nm at TSMC and the CDs of the printed features were evaluated as a function of repair size, feature size and bias of the repair on the mask. It was demonstrated that two techniques can be used to make repairs that print with good CDs on the wafer. One method involves postprocessing the mask to remove any implanted gallium and the other involves biasing the repair.
As advanced photolithography moves the printable feature size from 0.25 micrometer to 0.18 micrometer various mask types are being used to improve resolution. One example is the attenuated phase shift MoSiON mask. This in turn requires the development of new mask repair techniques that provide acceptable levels of transmission and minimize phase error. In this study we present the results of opaque defect repairs on MoSiON DUV masks, utilizing a new focused ion beam (FIB) process. Opaque defects were repaired by scanning the defect area with a gallium ion beam in the presence of an etchant gas. Dose enhancement on the order of 20x was achieved, relative non-gas enhanced sputtering on the MoSiON absorber material to a non gas enhanced gas enhanced sputtering, resulting in repaired regions with excellent transmission properties, and minimal quartz damage (riverbed). The optimization of the FIB repair process is discussed and the results of post repair characterization, utilizing AIMS and AFM are presented.
On the standard Micrion 8000 PM Repair System platform, the repair accuracy for clear defect repair and opaque defect repair is plus or minus 75 nm. Incorporation of a new ion beam column has pushed the repair accuracy for clear and opaque defect repairs to smaller values. This new system can image isolated defects less than 200 nm in size. To characterize the repair accuracy of the system, experiments on edge placement accuracy were performed. This paper presents data on the accuracy of defect repairs using the Micrion 8000 PSM Repair System on Chrome masks. The study specifically looks at the edge placement of opaque defect and clear defect repairs on masks coated with a conductive layer versus masks not coated with a conductive layer. We also explore the edge placement accuracy of the repair due to the directionality of the repair scan. Finally we examine the shape of the distribution function of the repair measurements and also investigate differences in the measured edge placement accuracy of repairs using different measuring techniques.
The Advanced X-Ray Astrophysics Facility (AXAF) is a high spatial resolution X-ray observatory scheduled for launch in 1998. One of its two focal plane instruments is the High Resolution Camera (HRC). The HRC consists of two microchannel plate detectors with photocathodes of CsI and KBR, respectively. Current approaches to modeling the HRC detector efficiency have focused on the response of the photocathode over the energy range 0.1 to 10 keV. In this paper, we present recent laboratory measurements of the quantum efficiency of coated and uncoated microchannel plates as a function of energy and angle of incidence of the X-Ray. An empirical model is fit to the data, and the results are used to predict the efficiency of HRC at the focal plane.
The high resolution camera (HRC) is a set of microchannel plate based detectors designed to fly aboard the Advanced X-Ray Astrophysics Facility (AXAF), one of the `Great Observatories' under the auspices of NASA. The HRC is designed in two configurations, one for direct imaging and the other for reading out the spectrum of transmission gratings for high resolution spectroscopy. The current design calls for different photocathodes: the imaging detector will have a CsI coating, and the spectroscopic detector will have KBr. Since the instrument is expected to perform over an extended period in space, we are interested in the long-term behavior of these coatings in vacuum. In this paper, we examine the current ROSAT experience from flight calibration observations with the HRI (the predecessor of HRC), and we outline plans for a test of the long-term stability of these coatings in vacuum and under nitrogen storage.
The low energy grating readout for the AXAF-I mission will be implemented with microchannel plates in conjunction with a novel semi-solid substrate strip charge detector. One axis of the charge detector consists of a conventional wire grid. The other axis consists of charge pickup strips formed on a ceramic substrate. This configuration allows the construction of a three segment detector with the approximate curvature of the Rowland circle. A prototype detector has been built and tested. Spatial resolution is commensurate with conventional crossgrid detectors (< 25 micrometers FWHM).
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