The authors employ a novel PIC to demonstrate athermalised transmission under direct modulation. The unique architecture of the chip enables compensation of thermal redshift of laser wavelength through control of self-heating. The PIC consists of 2 lasers in a master-slave configuration. Such a structure improves the performance of a free running laser (slave) by optical injection from another laser (master). The benefits reaped from such a PIC structure implementing optical injection include chirp minimisation, linewidth reduction, and improved modulation response. Experimental demonstration of 2.5 Gb/s OOK data transmitted over 37 km with error-free performance over the temperature range 10-45°C is presented.
KEYWORDS: Deep ultraviolet, Photoresist processing, Floods, Image processing, Diffusion, Picture Archiving and Communication System, Modeling and simulation, Anisotropy, Semiconducting wafers, Process modeling
In this paper, a new method to calculate the silylation profile in the PRIME process is presented. New software modules have been added to the 2D simulator SLITS in order to simulate the silylation and dry developed profiles in the PRIME process. The silylation and dry developed profiles for the PRIME process are simulated and compared to experimental results. Simulations were carried out for both e-beam and DUV exposures. Under e-beam exposure, the maximum percentage error between the simulated and experimental results was 13%. Under DUV exposure, the silylation depth at the mask edge can be reduced by increasing the dose thus effectively controlling the resist linewidth. The depth of focus was found to be 0.4 micrometers .
In DESIRE process, silylation is probably the most critical step since the final resist profiles are mainly determined by the Si distribution between the exposed and unexposed areas of the upper part of the resist. In the past, the silylation contrast was used to predict the silylation profile for a given silylation condition. In this paper, a new method to calculate the silylation profile is presented. A new module is added in ANKAN simulator to predict the silylated profile using this method. Extensive simulation was carried out for a one dimensional line space object under various process conditions. Change in silylation depth at the center and corner of the line has been computed to study the effect of aerial image on silylation profile for both PLASMASK 200G and 301U photoresists.
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