Fresnel zone plates (FZPs) are significant optical objects for extreme ultraviolet and x-ray microscopy, both of which are powerful tools due to their high spatial resolution and large penetration depth. Fabrication of FZPs is challenging as it requires high accuracy to achieve the narrow outmost zone and large aspect ratio. The focused ion beam (FIB) has been practically demonstrated as a potential alternative to electron beam lithography for its precision, rapidness, and mask-free essence. However, the common redeposition effect in the FIB process is a major obstacle to distort actual patterns from designed ones, especially for FZPs with outmost zone width of 100 nm and simultaneously aspect ratio beyond 2. We proposed an efficient method noted as single-pixel line-assisted sputtering (SLAS) to eliminate redeposition in situ during FZP fabrication. Through systematically optimizing parameters predominating ion dosages and, particularly, the positions of SLAS, we successfully obtained high-quality FZPs with outmost zone width down to 100 nm, perpendicular side walls, aspect ratio of up to 3 and diameter of 38  μm in 1.5 h. The application of SLAS also provides instructive guidance for other FIB processes to finely modulate the nanostructures.