Dr. Kacper Sierakowski Profile

Dr. Kacper Sierakowski

at Institute of High Pressure Physics PAS

SPIE Involvement:

Author

Publications (9)

Proceedings Article | 9 March 2024 Presentation

Fabrication method of GaN-air channels for embedded photonic structures

Marta Sawicka, Greg Muziol, Oliwia Golyga, Natalia Fiuczek, Anna Feduniewicz-Zmuda, Marcin Siekacz, Henryk Turski, Kacper Sierakowski, Tomasz Sochacki, Mateusz Słowikowski, Igor Prozheev, Filip Tuomisto, Czeslaw Skierbiszewski

Proceedings Volume PC12886, PC128860X (2024) https://doi.org/10.1117/12.3001341

KEYWORDS: Fabrication, Refractive index, Electrochemical etching, Diffraction gratings, Silicon, Ion channels, Gallium nitride, Annealing, Semiconductor lasers, Optical lithography

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Proceedings Article | 9 March 2024 Presentation

Effect of threading dislocations on the diffusion of implanted donors and acceptors in gallium nitride

Michal Bockowski, Kacper Sierakowski, Piotr Jaroszynski, Malgorzata Iwinska

Proceedings Volume PC12886, PC128860F (2024) https://doi.org/10.1117/12.3000147

KEYWORDS: Gallium nitride, Diffusion, Silicon, Magnesium, Transmission electron microscopy, Semiconductors, Scanning electron microscopy, P-type semiconductors, Finite element methods, Crystals

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Proceedings Article | 21 March 2023 Presentation

Study of ultra high pressure annealing of Si-implanted GaN epilayers with different ion fluences

Andrzej Taube, Oskar Sadowski, Iwona Sankowska, Karolina Pągowska, Marek Ekielski, Paweł Michałowski, Joanna Jankowska-Śliwińska, Jarosław Tarenko, Anna Szerling, Paweł Prystawko, Kacper Sierakowski, Piotr Jaroszyński, Michał Boćkowski, Izabella Grzegory

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648902

KEYWORDS: Gallium nitride, Annealing, Ions, Silicon, Diffusion, Magnesium, Ion implantation, Chemical species, X-ray diffraction, Surface roughness

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Proceedings Article | 21 March 2023 Presentation

Ion implantation of acceptors into gallium nitride

Kacper Sierakowski, Rafal Jakiela, Tomasz Sochacki, Malgorzata Iwinska, Piotr Jaroszynski, Michal Fijalkowski, Marcin Turek, Michal Bockowski

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648256

KEYWORDS: Gallium nitride, Ion implantation, Crystals, Diffusion, Annealing, Zinc, Transistors, Optoelectronic devices, Mass spectrometry, Magnesium

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Proceedings Article | 15 March 2023 Presentation + Paper

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi

Proceedings Volume 12421, 124210C (2023) https://doi.org/10.1117/12.2646233

KEYWORDS: Annealing, Gallium nitride, Magnesium, Gallium, Ions, Ion implantation, Silicon, Doppler effect, Solids, Chemical species

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Proceedings Article | 5 March 2022 Presentation

Examination of silicon diffusion in GaN

Malgorzata Iwinska, Pawel Prystawko, Andrzej Taube, Kacper Sierakowski, Rafal Jakiela, Michal Bockowski

Proceedings Volume PC12001, PC1200107 (2022) https://doi.org/10.1117/12.2607583

KEYWORDS: Silicon, Diffusion, Gallium nitride, Crystals, Atomic force microscopy, X-ray diffraction, Vapor phase epitaxy, Optical microscopy, Nitrogen, Mass spectrometry

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Proceedings Article | 5 March 2021 Presentation

Investigation of Be diffusion coefficients for various crystallographic directions in GaN grown by HVPE

Michal Bockowski, Kacper Sierakowski, Rafal Jakiela, Marcin Turek, Piotr Jaroszyński, Paweł Kempisty, Michał Fijałkowski

Proceedings Volume 11686, 116861U (2021) https://doi.org/10.1117/12.2577013

KEYWORDS: Beryllium, Diffusion, Gallium nitride, Crystals, Polishing, Error analysis, Atomic force microscopy, Annealing, X-ray diffraction

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Proceedings Article | 5 March 2021 Presentation

Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

A. Uedono, H. Sakurai, T. Narita, K. Sierakowski, M. Bockowski, J. Suda, S. Ishibashi, S. Chichibu, T. Kachi

Proceedings Volume 11686, 116861P (2021) https://doi.org/10.1117/12.2575972

KEYWORDS: Gallium nitride, Annealing, Magnesium, Ion implantation, Doping, Spectroscopy, Ions, Nitrogen, Temperature metrology, Aluminum nitride

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Proceedings Article | 10 March 2020 Presentation

Recent progress in bulk GaN growth (Conference Presentation)

Michal Bockowski, Boleslaw Lucznik, Mikolaj Amilusik, Michal Fijalkowski, Kacper Sierakowski, Slawomir Sakowski, Aneta Sidor, Malgorzata Iwinska, Robert Kucharski, Karolina Grabianska, Tomasz Sochacki

Proceedings Volume 11280, 1128004 (2020) https://doi.org/10.1117/12.2545062

KEYWORDS: Gallium nitride, Crystals, Doping, Manganese, Vapor phase epitaxy

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Showing 5 of 9 publications

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