Mr. Kangjoon Seo Profile

Kangjoon Seo

at Hynix Semiconductor Inc

SPIE Involvement:

Author

Publications (9)

Proceedings Article | 10 April 2024 Poster + Paper

Wafer printability simulation of EUV mask defects using mask SEM and AFM

Donghwan Son, Lanpo He, Masaki Satake, Ying He, Kihun Park, Suhwan Kim, Jing Jiao, Peter Hu, Vikram Tolani, Kangjoon Seo, Kiwoo Jun, Heeyeon Jang, Sujeong Won, Bonseung Koo, Yongwook Lee, Sungha Woo, Euisang Park

Proceedings Volume 12955, 129552N (2024) https://doi.org/10.1117/12.3010196

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Printing, Extreme ultraviolet, Atomic force microscopy, Contour extraction, Binary data, Data processing, Scanners, Extreme ultraviolet lithography

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Proceedings Article | 1 April 2013 Paper

EUV mask defect analysis from mask to wafer printing

Yoonsuk Hyun, Kangjoon Seo, Kyuyoung Kim, Inhwan Lee, Byounghoon Lee, Sunyoung Koo, Jongsu Lee, Sukkyun Kim, Seomin Kim, Myoungsoo Kim, Hyosang Kang

Proceedings Volume 8679, 86790G (2013) https://doi.org/10.1117/12.2010091

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Particles, Extreme ultraviolet, Wafer inspection, Scanners, Reticles, Extreme ultraviolet lithography, Defect inspection

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Proceedings Article | 26 May 2010 Paper

New critical dimension uniformity measurement concept based reticle inspection tool

Kangjoon Seo, MunSik Kim, Sang Chul Kim, JaeCheon Shin, ChangYeol Kim, John Miller, Aditya Dayal, Trent Hutchinson, KiHun Park

Proceedings Volume 7748, 77480N (2010) https://doi.org/10.1117/12.864109

KEYWORDS: Photomasks, Reticles, Inspection, Critical dimension metrology, Reflectivity, Semiconducting wafers, Scanning electron microscopy, Manufacturing, Data processing, Scanners

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Proceedings Article | 11 May 2009 Paper

Evaluation for EAPSM life time by ArF pellicle characteristic

Kang Joon Seo, Ji Sun Ryu, Goo Min Jeong, Shin Cheol Kang, Yong Dae Kim, Sang Chul Kim, Chang Yeol Kim

Proceedings Volume 7379, 73791S (2009) https://doi.org/10.1117/12.824304

KEYWORDS: Pellicles, Photomasks, Air contamination, Transmittance, Contamination, Semiconducting wafers, Lithography, Inspection, Critical dimension metrology, Fluorine

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Proceedings Article | 17 October 2008 Paper

Report of latent contamination factors inducing lithographic variation

Jin Ho Ryu, Kang Joon Seo, Ji Sun Ryu, Chang Yeol Kim

Proceedings Volume 7122, 712215 (2008) https://doi.org/10.1117/12.801433

KEYWORDS: Contamination, Photomasks, Pellicles, Lithography, Air contamination, Quartz, 193nm lithography, Transmittance, Semiconducting wafers, Critical dimension metrology

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Proceedings Article | 17 October 2008 Paper

The study of CD behavior due to transmission control position change within photomask substrate

Munsik Kim, Hyemi Lee, Sungha Woo, Kangjoon Seo, Yongkyoo Choi, Changyeol Kim

Proceedings Volume 7122, 712239 (2008) https://doi.org/10.1117/12.801432

KEYWORDS: Critical dimension metrology, Photomasks, Semiconducting wafers, Quartz, Control systems, Printing, Refractive index, Laser scattering, Optical lithography, Ultrafast lasers

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Proceedings Article | 19 May 2008 Paper

The verification of printability about marginal defects and the detectability at the inspection tool in sub 50nm node

Hyemi Lee, Goomin Jeong, Kangjun Seo, Sangchul Kim, changreol kim

Proceedings Volume 7028, 70282V (2008) https://doi.org/10.1117/12.793101

KEYWORDS: Bridges, Inspection, Photomasks, Semiconducting wafers, Image transmission, Critical dimension metrology, Defect detection, Manufacturing, Optical lithography, Scanners

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Since mask design rule is smaller and smaller, Defects become one of the issues dropping the mask yield. Furthermore controlled defect size become smaller while masks are manufactured. According to ITRS roadmap on 2007, controlled defect size is 46nm in 57nm node and 36nm in 45nm node on a mask. However the machine development is delayed in contrast with the speed of the photolithography development. Generally mask manufacturing process is divided into 3 parts. First part is patterning on a mask and second part is inspecting the pattern and repairing the defect on the mask. At that time, inspection tools of transmitted light type are normally used and are the most trustful as progressive type in the developed inspection tools until now. Final part is shipping the mask after the qualifying the issue points and weak points. Issue points on a mask are qualified by using the AIMS (Aerial image measurement system). But this system is including the inherent error possibility, which is AIMS measures the issue points based on the inspection results. It means defects printed on a wafer are over the specific size detected by inspection tools and the inspection tool detects the almost defects. Even though there are no tools to detect the 46nm and 36nm defects suggested by ITRS roadmap, this assumption is applied to manufacturing the 57nm and 45nm device. So we make the programmed defect mask consisted with various defect type such as spot, clear extension, dark extension and CD variation on L/S(line and space), C/H(contact hole) and Active pattern in 55nm and 45nm node. And the programmed defect mask was inspected by using the inspection tool of transmitted light type and was measured by using AIMS 45-193i. Then the marginal defects were compared between the inspection tool and AIMS. Accordingly we could verify whether defect size is proper or not, which was suggested to be controlled on a mask by ITRS roadmap. Also this result could suggest appropriate inspection tools for next generation device among the inspection tools of transmitted light type, reflected light type and aerial image type.

Proceedings Article | 15 May 2007 Paper

Evaluation of litho printability of DRAM contact hole patterns with various programmed defects

KangJoon Seo, SangIee Lee, HyunYoung Kim, DaeHo Hwang, Sangpyo Kim, Goomin Jeong, Oscar Han, Chunlin Chen, David Yee, EunJi Kim, KiHun Park, NamWook Kim, Sunny Choi, David Kim, Shrinkant Lohokare

Proceedings Volume 6607, 66072D (2007) https://doi.org/10.1117/12.728996

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Reticles, Tolerancing, Scanning electron microscopy, Lithography, Manufacturing, Printing, Critical dimension metrology

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Proceedings Article | 20 October 2006 Paper

Multi-point CD measurement method to evaluate pattern fidelity and performance of mask

Munsik Kim, Hyemi Lee, Kanjoon Seo, Dongwook Lee, Yongkyoo Choi, Sunghyun Oh, Oscar Han

Proceedings Volume 6349, 634944 (2006) https://doi.org/10.1117/12.686473

KEYWORDS: Critical dimension metrology, Photomasks, Scanning electron microscopy, Image filtering, Line edge roughness, Anisotropic filtering, Time metrology, Anisotropic diffusion, Scatterometry, Metrology

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Showing 5 of 9 publications

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