Ms. Karolina Grabianska Profile

Karolina Grabianska

at Institute of High Pressure Physics

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Author

Publications (5)

Proceedings Article | 8 March 2024 Presentation + Paper

Challenges and prospects of ammonothermal GaN crystal growth and substrate fabrication

K. Grabiańska, R. Kucharski, M. Boćkowski

Proceedings Volume 12886, 1288602 (2024) https://doi.org/10.1117/12.3000034

KEYWORDS: Gallium nitride, Fabrication, Crystals, Crystallization, Light emitting diodes, Electrical properties, Vapor phase epitaxy, Transistors, Sodium, Semiconductor lasers

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Proceedings Article | 6 March 2021 Poster + Presentation

Highly conductive ammonothermal GaN substrates with controlled concentration of gallium vacancies

Piotr Jaroszynski, Karolina Grabianska, Michal Fijalkowski, Mikolaj Amilusik, Marcin Zajac, Marcin Turek, Michal Bockowski

Proceedings Volume 11686, 116862E (2021) https://doi.org/10.1117/12.2577017

KEYWORDS: Gallium, Gallium nitride, Crystals, Ions, Annealing, Oxygen, Ion implantation, Hydrogen, Diffusion

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Proceedings Article | 5 March 2021 Presentation

Recent progress in basic ammonothermal GaN crystal growth

Karolina Grabianska, Michal Bockowski, Boleslaw Lucznik, Robert Kucharski, Tomasz Sochacki

Proceedings Volume 11686, 116861K (2021) https://doi.org/10.1117/12.2577016

KEYWORDS: Gallium nitride, Crystals, Transistors, Vapor phase epitaxy, Sodium, Semiconductor lasers, Optoelectronic devices, High power lasers, Electronic components

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Proceedings Article | 10 March 2020 Presentation

Recent progress in bulk GaN growth (Conference Presentation)

Michal Bockowski, Boleslaw Lucznik, Mikolaj Amilusik, Michal Fijalkowski, Kacper Sierakowski, Slawomir Sakowski, Aneta Sidor, Malgorzata Iwinska, Robert Kucharski, Karolina Grabianska, Tomasz Sochacki

Proceedings Volume 11280, 1128004 (2020) https://doi.org/10.1117/12.2545062

KEYWORDS: Gallium nitride, Crystals, Doping, Manganese, Vapor phase epitaxy

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Proceedings Article | 19 April 2018 Paper

Ammonothermal GaN substrates for microwave electronics and energoelectronics

R. Kucharski, M. Zając, K. Grabiańska, A. Gwardys-Bąk, A. Puchalski, Michal Boćkowski

Proceedings Volume 10715, 107150M (2018) https://doi.org/10.1117/12.2318038

KEYWORDS: Gallium nitride, Crystals, Transistors, Electronics, Diodes, Semiconductors, Microwave radiation, Electronic components

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