KEYWORDS: Air contamination, Photomasks, Raman spectroscopy, Molybdenum, Particles, Chemical analysis, Quartz, Ions, Testing and analysis, Scanning electron microscopy
ArF lithography sometimes generates the haze defects on the photomask substrate, resulting in serious yield deterioration
in ULSI production. In order to solve this problem, experimental and theoretical studies have been carried out on the
generated haze defects. In characterizing the haze defects, the composition and chemical structure of the haze defects
were analyzed by focusing on 1.0 x 0.3μm sizes defects using Raman, ToF-SIMS and AES spectroscopy with their
highest spatial and mass resolution level. To confirm the experimental analyses, theoretical ab initio molecular orbital
calculations were carried out on the model compounds of the generated haze defects. These experimental and theoretical
studies indicate that the haze defects on quartz surface consist of (NH4)2SO4 and that those on half-tone (HT) film
surface, on the other hand, consist of (MoO3)x(SO4)y(NH4)z complex including Mo from HT film material. In the latter
case, NH4 ion was observed only in surface region of the haze defects. Based on these results, we have proposed a novel
model of haze generation mechanism on quartz and HT film surfaces of photomask substrate.
Damage to minute features of 45nm-node device masks occurred during megasonic cleaning.
Since we were obliged to weaken the mechanical effect of megasonics in order to prevent the collapse of minute
features, we could not obtain acceptable cleaning results.
In order to manage the minute features, there is a need to develop a new mechanical cleaning method that
causes less damage, but does not compromise the ability to remove particles. Cleaning using a two-fluid nozzle
is a promising candidate. We investigated the two-fluid nozzle and compared it with megasonic cleaning, and
we confirmed that the two-fluid nozzle achieved acceptable cleaning results without damaging 45nm-node
device masks. Furthermore, for 32nm-node device masks, we have improved the two-fluid nozzle in terms of
the cleaning energy distribution.
We propose a new method of quality assurance for attenuated phase shifting mask (PSM) using the concept of the flexible mask specifications to extend the life of PSM [1]. The haze on PSM is a major issue for ArF lithography in semiconductor device manufacturing since it causes decline of device yield. PSM irradiated by ArF laser is periodically cleaned before haze is printed on wafer, which is a killer defect. Repetition of cleaning causes great changes of properties, i.e. phase, transmittance. Therefore, the number of times cleaning is performed has been limited by predetermined specifications based on ITRS. In this paper, relaxation of the pass/ fail criteria are studied as one solution to this limitation problem. In order to decide a suitable number of times for cleaning to be performed, we introduce the concept of flexible mask specifications, taking lithography margin into account.
Firstly, we obtained mask parameters before cleaning; these parameters were, for instance, phase, transmittance and CD. Secondly, using these parameters, we simulated images of resist pattern exposed on wafer and obtained exposure latitude at desired depth of focus. Thirdly, we simulated mask parameters and exposure latitude when the mask was cleaned several times and obtained correlation between number of times cleaning is performed and exposure latitude. And finally, we estimated suitable pass/ fail criteria of mask parameters and the maximum number of times cleaning should be performed for each mask at the standard exposure latitude. In the above procedure, the maximum number of times cleaning should be performed exceeded that determined in the case of conventional specifications based on ITRS.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.