Dr. Leo J. Schowalter Profile

Dr. Leo J. Schowalter

Designated Professor

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 26 September 2023 Presentation

Current-injected continuous-wave AlGaN-based UVC laser diodes

Maki Kushimoto, Ziyi Zhang, Akira Yoshikawa, Koji Aoto, Yoshio Honda, Leo Schowalter, Chiaki Sasaoka, Hiroshi Amano

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2650922

KEYWORDS: Semiconductor lasers, Continuous wave operation, Cladding, Waveguides, Resistance, Refractive index, Aluminum, Quantum wells, Optical design, Active optics

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Proceedings Article | 5 March 2022 Presentation

Emission uniformity of UVC laser diodes on AlN substrates

Maki Kushimoto, Ziyi Zhang, Yoshio Honda, Leo Schowalter, Chiaki Sasaoka, Hiroshi Amano

Proceedings Volume PC12001, PC120010L (2022) https://doi.org/10.1117/12.2604370

KEYWORDS: Semiconductor lasers, Aluminum nitride, Heat treatments, Deep ultraviolet, Crystals, Polarization, Laser crystals, Doping

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Proceedings Article | 5 March 2021 Presentation + Paper

Development of UV-C laser diodes on AlN substrate

Maki Kushimoto, Zhang Ziyi, Naoharu Sugiyama, Yoshio Honda, Leo Schowalter, Chiaki Sasaoka, Hiroshi Amano

Proceedings Volume 11686, 116860P (2021) https://doi.org/10.1117/12.2575872

KEYWORDS: Semiconductor lasers, Mirrors, Wet etching, Semiconductors, Semiconducting wafers, Polarization, Fabrication, Electrodes, Dry etching, Doping

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Proceedings Article | 8 March 2014 Paper

High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime

Craig Moe, James Grandusky, Jianfeng Chen, Ken Kitamura, Mark Mendrick, Muhammad Jamil, Masato Toita, Shawn Gibb, Leo Schowalter

Proceedings Volume 8986, 89861V (2014) https://doi.org/10.1117/12.2037856

KEYWORDS: Light emitting diodes, Aluminum nitride, Absorption, Reliability, Crystals, Lead, Ultraviolet radiation, Lamps, Gallium nitride, Analytical research

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Proceedings Article | 3 March 2006 Paper

Very low dislocation density AlN substrates for device applications

Sandra Schujman, Leo Schowalter, Wayne Liu, Joseph Smart

Proceedings Volume 6121, 61210K (2006) https://doi.org/10.1117/12.658180

KEYWORDS: Aluminum nitride, Aluminum, Crystals, Atomic force microscopy, X-rays, Ultraviolet radiation, Silicon carbide, Gallium, Temperature metrology, Semiconducting wafers

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Proceedings Article | 15 September 2005 Paper

Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate

F. Shahedipour-Sandvik, J. Grandusky, M. Jamil, V. Jindal, S. Schujman, L. Schowalter, R. Liu, F. Ponce, M. Cheung, A. Cartwright

Proceedings Volume 5941, 594107 (2005) https://doi.org/10.1117/12.617829

KEYWORDS: Aluminum nitride, Indium gallium nitride, Sapphire, Luminescence, Transmission electron microscopy, Gallium nitride, Diffraction, Crystals, Quantum wells, Optical spectroscopy

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Proceedings Article | 12 August 1992 Paper

Fundamental studies of Schottkybarrier infrared detectors by ballistic-electron-emission microscopy

Leo Schowalter, Edwin Lee, B. Turner, Jorge Jimenez

Proceedings Volume 1683, (1992) https://doi.org/10.1117/12.137768

KEYWORDS: Interfaces, Metals, Scattering, Gold, Scanning tunneling microscopy, Spatial resolution, Microscopy, Signal attenuation, Silicon, Electron transport

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Showing 5 of 7 publications

Conference Committee Involvement (1)

GaN Materials and Devices

23 January 2006 | San Jose, California, United States

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