Nicholas Gusken, Alberto Lauri, Yi Li, Takayuki Matsui, Anna Regoutz, Brock Doiron, Ryan Bower, Andrei Mihai, Rupert Oulton, Peter Petrov, Lesley Cohen, Stefan Maier
This Conference Presentation, "Oxide-enhanced IR hot-carrier-based photo detection in metal thin-film Si junctions" was recorded at Photonics West 2020 held in San Francisco, California, United States.
Graphene has emerged as a promising material for photonics and optoelectronics due to its potential for ultrafast and broad-band photodetection. The photoresponse of graphene junctions is characterized by two competing photocurrent generation mechanisms: a built-in field driven photovoltaic effect and a more dominant hot- carrier-assisted photothermoelectric (PTE) effect. The hot-carrier PTE effect is understood to rely on abrupt variations in the Seebeck coefficient through the graphene doping profile. A second PTE effect can occur across a homogeneous graphene channel in the presence of an electronic temperature gradient. Here, we report on the latter effect facilitated by strongly localised plasmonic heating of graphene carriers in presence of nanostructured electrical contacts resulting in electronic temperatures of the order of 2000 K. At a certain gate bias, the plasmon-induced PTE photocurrent contribution can be isolated. In this regime, the device effectively operates as a sensitive electronic thermometer and as such represents an enabling technology for the development of hot carrier based plasmonic devices.
With similar optical properties to gold and high thermal stability, titanium nitride continues to prove itself as a promising plasmonic material for high-temperature applications in the visible and near-infrared. In this work, we use transient pump probe differential reflection measurements to compare the electron energy decay channels in titanium nitride and gold thin films. Using an extended two temperature model to incorporate the photoexcited electrons, it is possible to separate the electron-electron and electron-phonon scattering contributions immediately following the arrival of the pump pulse. This model allows for incredibly accurate determination of the internal electronic properties using only optical measurements. As the electronic properties are key in hot electron applications, we show that titanium nitide has substantially longer electron thermalization and electron-phonon scattering times. With this, we were also able to resolve electron thermal conduction in the film using purely optical measurements.
Here we report results of time-of-flight (ToF) measurements on blends of different ratios of poly(9,9-dioctylfluorene-cobis-
N,N'-(4-methoxylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFMO) and the structurally similar poly(9,9-
dioctylfluorene-co-N-(4-methoxyphenyl)diphenylamine) (TFMO). It is shown that the hole mobility can be tuned over
three orders of magnitude with a mobility minimum at 10% PFMO and 90% TFMO. We also use Raman microscopy to
demonstrate that the blends do not phase separate within the one micron resolution of our experiment.
This paper concerns the study of growth and characterizations of Co2YZ with Y an element of transition metal group and Z, a III-V group element deposited onto Si, GaAs and InAs substrates. Two PLD configurations have been explored, the conventional 1-Beam-PLD and the 2-Crossed-Beams-PLD one. We demonstrated that depending on the configuration we got Co2YZ polycrystalline structure with unwanted droplets or droplet-free, single crystalline oriented thin films at substrate temperature as low as 353 K. Optical conductivity and magnetic properties are presented.
This work presents our attempts to grow thin films of the ferromagnetic half-Heusler alloy NiMnSb and also a bi-layered structure MnSb/NiMnSb onto (100) semiconductor substrates using Single Beam and respectively Double Beam Pulsed Laser Deposition. We investigated the samples by XRD, scanning electron microscopy (SEM), Energy Dispersive X ray (EDX) analysis and SQUID magnetometry. The thin films obtained in both configurations are crystalline, single phase with stoichiometry corresponding to the bulk material. The out of plane magnetisation of the bi-layered structure reaches the saturation value more rapidly than the NiMnSb/Si film.
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