Ms. Manuela S. Gutsch Profile

Manuela S. Gutsch

at Qoniac GmbH

SPIE Involvement:

Author

Publications (23)

Proceedings Article | 10 April 2024 Poster + Paper

An alternative to M+3S overlay dispositioning metric: number-of-dies-within-spec

Alberto Lopez-Gomez, Stefan Buhl, Eric Jehnes, Patrick Lomtscher, Manuela Gutsch, Xaver Thrun, Clemens Utzny, Philip Groeger, Johannes Kowalewski

Proceedings Volume 12955, 129553T (2024) https://doi.org/10.1117/12.3022117

KEYWORDS: Semiconducting wafers, Overlay metrology, Scanners, Semiconductors, Modeling, Interpolation, High volume manufacturing, Data modeling, Performance modeling, Mixtures

Read Abstract +

Proceedings Article | 20 March 2020 Presentation + Paper

Real-time full-wafer design-based inter-layer virtual metrology

Lianghong Yin, John Sturtevant, Alberto Lopez Gomez, Shumay Shang, Young Chang Kim, Kostas Adam, Marko Chew, Abhinandan Nath, Boris Habets, Manuela Gutsch, Philip Groeger

Proceedings Volume 11325, 1132507 (2020) https://doi.org/10.1117/12.2551082

KEYWORDS: Semiconducting wafers, Data modeling, Overlay metrology, Metals, Metrology, Critical dimension metrology, Databases, Inspection, Computer simulations, Scanners

Read Abstract +

Proceedings Article | 13 March 2018 Paper

Advanced combined overlay and CD uniformity measurement mark for double patterning

Hsiao Lin Hsu, En Chuan Lio, Charlie Chen, Jia Hung Chang, Sho Shen Lee, Stefan Buhl, Manuela Gutsch, Patrick Lomtscher, Martin Freitag, Boris Habets, Rex Liu

Proceedings Volume 10585, 105851H (2018) https://doi.org/10.1117/12.2299299

KEYWORDS: Overlay metrology, Etching, Lithography, Semiconducting wafers, Metrology, Critical dimension metrology, Molybdenum, Information operations, Optical lithography, Double patterning technology

Read Abstract +

Proceedings Article | 13 March 2018 Paper

Geometry-based across wafer process control in a dual damascene scenario

Gerd Krause, Detlef Hofmann, Boris Habets, Stefan Buhl, Manuela Gutsch, Alberto Lopez-Gomez, Xaver Thrun

Proceedings Volume 10585, 105852C (2018) https://doi.org/10.1117/12.2302972

KEYWORDS: Resistance, Etching, Semiconducting wafers, Copper, Chemical mechanical planarization, Oxides, Critical dimension metrology, Metals, Scatter measurement, Scatterometry

Read Abstract +

Proceedings Article | 13 March 2018 Paper

In-depth analysis and characterization of a dual damascene process with respect to different CD

Gerd Krause, Detlef Hofmann, Boris Habets, Stefan Buhl, Manuela Gutsch, Alberto Lopez-Gomez, Wan-Soo Kim, Xaver Thrun

Proceedings Volume 10585, 105852T (2018) https://doi.org/10.1117/12.2302971

KEYWORDS: Critical dimension metrology, Oxides, Capacitance, Semiconducting wafers, Etching, Metals, Resistance, Copper, Photomasks, Chemical mechanical planarization

Read Abstract +

Proceedings Article | 28 March 2017 Presentation + Paper

Combined process window monitoring for critical features

Carsten Hartig, Bernd Schulz, Robert Melzer, Matthias Ruhm, Daniel Fischer, Stefan Buhl, Boris Habets, Martin Rößiger, Manuela Gutsch

Proceedings Volume 10145, 101450U (2017) https://doi.org/10.1117/12.2259910

KEYWORDS: Electrical breakdown, Semiconducting wafers, Critical dimension metrology, Overlay metrology, Computer simulations, Lithography, Metals, Optical lithography, Feature extraction, Distance measurement

Read Abstract +

Proceedings Article | 8 March 2016 Paper

Patterning and imaging with electrons: assessing multi-beam SEM for e-beam structured CMOS samples

Tomasz Garbowski, Friedhelm Panteleit, Gregor Dellemann, Manuela Gutsch, Christoph Hohle, Elke Reich, Matthias Rudolph, Katja Steidel, Xaver Thrun, Dirk Zeidler

Proceedings Volume 9778, 97781V (2016) https://doi.org/10.1117/12.2225501

KEYWORDS: Electrons, Defect inspection, Semiconducting wafers, Scanning electron microscopy, Inspection, Wafer inspection, Semiconductors, Electron beams, Metals, Tin, Electron beam lithography, Image processing, Sensors

Read Abstract +

Proceedings Article | 19 March 2015 Paper

Verification of E-Beam direct write integration into 28nm BEOL SRAM technology

Christoph Hohle, Kang-Hoon Choi, Manuela Gutsch, Norbert Hanisch, Robert Seidel, Katja Steidel, Xaver Thrun, Thomas Werner

Proceedings Volume 9423, 94231B (2015) https://doi.org/10.1117/12.2087612

KEYWORDS: Metals, Semiconducting wafers, Electron beam lithography, Etching, Electron beam direct write lithography, Photomasks, Optical alignment, Wafer-level optics, Back end of line, Electron beams

Read Abstract +

Electron beam direct write lithography (EBDW) potentially offers advantages for low-volume semiconductor manufacturing, rapid prototyping or design verification due to its high flexibility without the need of costly masks. However, the integration of this advanced patterning technology into complex CMOS manufacturing processes remains challenging. The low throughput of today’s single e-Beam tools limits high volume manufacturing applications and maturity of parallel (multi) beam systems is still insufficient [1,2]. Additional concerns like transistor or material damage of underlying layers during exposure at high electron density or acceleration voltage have to be addressed for advanced technology nodes. In the past we successfully proved that potential degradation effects of high-k materials or ULK shrink can be neglected and were excluded by demonstrating integrated electrical results of 28nm node transistor and BEOL performance following 50kV electron beam dry exposure [3]. Here we will give an update on the integration of EBDW in the 300mm CMOS manufacturing processes of advanced integrated circuits at the 28nm SRAM node of GLOBALFOUNDRIES Dresden. The work is an update to what has been previously published [4]. E-beam patterning results of BEOL full chip metal and via layers with a dual damascene integration scheme using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMSCNT are demonstrated. For the patterning of the Metal layer a Mix & Match concept based on the sequence litho - etch -litho -etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. Etch results are shown and compared to the POR. Results are also shown on overlay performance and optimized e-Beam exposure time using most advanced data prep solutions and resist processes. The patterning results have been verified using fully integrated electrical measurement of metal lines and vias on wafer level. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

Proceedings Article | 17 October 2014 Paper

Integration of e-beam direct write in BEOL processes of 28nm SRAM technology node using mix and match

Manuela Gutsch, Kang-Hoon Choi, Norbert Hanisch, Christoph Hohle, Robert Seidel, Katja Steidel, Xaver Thrun, Thomas Werner

Proceedings Volume 9231, 92310F (2014) https://doi.org/10.1117/12.2067884

KEYWORDS: Metals, Etching, Semiconducting wafers, Optical alignment, Electron beam direct write lithography, Photomasks, Back end of line, Electron beam lithography, Scanning electron microscopy, Electron beams

Read Abstract +

Proceedings Article | 26 March 2013 Paper

Influence of high-energy electron irradiation on ultra-low-k characteristics and transistor performance

Katja Steidel, Kang-Hoon Choi, Martin Freitag, Manuela Gutsch, Christoph Hohle, Robert Seidel, Xaver Thrun, Thomas Werner

Proceedings Volume 8680, 86801A (2013) https://doi.org/10.1117/12.2011467

KEYWORDS: Back end of line, Transistors, Semiconducting wafers, Dielectrics, Oxides, Resistance, Copper, Electron beam lithography, Capacitance, Metals

Read Abstract +

Proceedings Article | 8 November 2012 Paper

Advanced module for model parameter extraction using global optimization and sensitivity analysis for electron beam proximity effect correction

Thiago Figueiro, Kang-Hoon Choi, Manuela Gutsch, Martin Freitag, Christoph Hohle, Jean-Hervé Tortai, Mohamed Saib, Patrick Schiavone

Proceedings Volume 8522, 852212 (2012) https://doi.org/10.1117/12.965312

KEYWORDS: Calibration, Point spread functions, Data modeling, Optimization (mathematics), Semiconducting wafers, Electron beams, Beam analyzers, Metrology, Photoresist processing, Electron beam lithography

Read Abstract +

Proceedings Article | 21 March 2012 Paper

Feasibility study of optical/e-beam complementary lithography

Christoph Hohle, Kang-Hoon Choi, Martin Freitag, Manuela Gutsch, Philipp Jaschinsky, Frank Kahlenberg, Christof Klein, Jan Klikovits, Jan Paul, Matthias Rudolph, Xaver Thrun

Proceedings Volume 8323, 83232C (2012) https://doi.org/10.1117/12.916386

KEYWORDS: Etching, Lithography, Electron beam lithography, Silicon, Semiconducting wafers, Photomasks, 193nm lithography, Electron beam direct write lithography, Beam shaping, Optics manufacturing

Read Abstract +

Proceedings Article | 19 March 2012 Paper

Demonstration of 22nm SRAM features with patternable hafnium oxide-based resist material using electron-beam lithography

Xaver Thrun, Kang-Hoon Choi, Martin Freitag, Andrew Grenville, Manuela Gutsch, Christoph Hohle, Jason Stowers, Johann Bartha

Proceedings Volume 8325, 832518 (2012) https://doi.org/10.1117/12.917814

KEYWORDS: Semiconducting wafers, Oxides, Hafnium, Electron beam lithography, Photomasks, Electron beams, Metals, Etching, Scanning electron microscopy, Manufacturing

Read Abstract +

Proceedings Article | 14 October 2011 Paper

Efficient large volume data preparation for electron beam lithography for sub-45nm node

Kang-Hoon Choi, Manuela Gutsch, Martin Freitag, Christoph Hohle, Luc Martin, Sebastien Bayle, Serdar Manakli, Patrick Schiavone

Proceedings Volume 8166, 816621 (2011) https://doi.org/10.1117/12.897586

KEYWORDS: Modulation, Electron beam lithography, Cadmium sulfide, Algorithm development, Point spread functions, Metals, Data corrections, Photomasks, Critical dimension metrology, Optics manufacturing

Read Abstract +

SPIE Journal Paper | 1 October 2011

Fast characterization of line end shortening and application of novel correction algorithms in e-beam direct write

Martin Freitag, Kang-Hoon Choi, Manuela Gutsch, Christoph Hohle, Reinhard Galler, Michael Krüger, Ulf Weidenmüller

JM3, Vol. 10, Issue 04, 043012, (October 2011) https://doi.org/10.1117/12.10.1117/1.3659145

KEYWORDS: Cadmium, Semiconducting wafers, Computer simulations, Electron beams, Detection and tracking algorithms, Electron beam lithography, Point spread functions, Model-based design, Modulation, Nanoelectronics

Read Abstract +

Proceedings Article | 4 April 2011 Paper

Fast characterization of line-end shortening and application of novel correction algorithms in e-beam direct write

Martin Freitag, Kang-Hoon Choi, Manuela Gutsch, Christoph Hohle, Reinhard Galler, Michael Krüger, Ulf Weidenmueller

Proceedings Volume 7970, 79701C (2011) https://doi.org/10.1117/12.879582

KEYWORDS: Cadmium sulfide, Computer simulations, Semiconducting wafers, Electron beam lithography, Electron beams, Detection and tracking algorithms, Point spread functions, Electron beam direct write lithography, Modulation, Nanoelectronics

Read Abstract +

Proceedings Article | 4 April 2011 Paper

Data preparation solution for e-beam multiple pass exposure: reaching sub-22nm nodes with a tool dedicated to 45 nm

Luc Martin, Serdar Manakli, Sébastien Bayle, Kang-Hoon Choi, Manuela Gutsch, Jonathan Pradelles, Jessy Bustos

Proceedings Volume 7970, 797019 (2011) https://doi.org/10.1117/12.879059

KEYWORDS: Electroluminescence, Electron beam lithography, Line edge roughness, Electron beam direct write lithography, Lithography, Modulation, Standards development, Semiconducting wafers, Optical lithography, Logic

Read Abstract +

Electron Beam Direct Write (EBDW) lithography is used in the IC manufacturing industry to sustain optical lithography for prototyping applications and low volume manufacturing. It is also used in R&D to develop advanced technologies, ahead of mass production. As microelectronics is now moving towards the 32nm node and beyond, the specifications in terms of dimension control and roughness becomes tighter. In addition, the shrink of the size and pitch of features significantly reduces the process window of lithographic tools. In EBDW, the standard proximity effects corrections only based on dose modulation show difficulties to provide the required Energy Latitude for patterning structures designed below 45nm. A new approach is thus needed to improve the process window of EBDW lithography and push its resolution capabilities. In previous papers, a new writing strategy based on multiple pass exposure has been introduced and optimized to pattern critical dense lines. This new technique consists in adding small electron Resolution Improvement Features (eRIFs) on top of the nominal structures. Then this new design is exposed in two successive passes with optimized doses. Previous studies were led to evaluate this new writing technique and establish rules to optimize the design of the eRIF. Significant improvements have already been demonstrated on SRAM and Logic structures down to the 16nm node. These results were obtained with a tool dedicated to the 45nm node. The next step of this work is thus to automatically implement the eRIF to correct large-scale layouts. In this paper, a new data preparation flow is set up for EBDW lithography. It uses the eRIF solution as a full advanced correction method for critical structures. The specific correction rules established in our previous studies are implemented to improve the CD control and the patterning of corners and line ends. Moreover, the dose and shape of the eRIFs are automatically tuned to best fit the nominal design. This work is done with "INSCALE^®", the new data preparation software from ASELTA Nanographics. This data preparation flow is then applied on layouts down to the 22nm node. Comparisons with the standard dose modulation flow demonstrate that adding eRIFs significantly improves the process window and thus the resolution of e-beam tools. It also shows that the multiple pass exposure technique can be used as a specific correction method on large scale layouts.

Proceedings Article | 2 April 2011 Paper

Line end shortening and application of novel correction algorithms in e-beam direct write

Martin Freitag, Kang-Hoon Choi, Manuela Gutsch, Christoph Hohle

Proceedings Volume 7985, 79850T (2011) https://doi.org/10.1117/12.891127

KEYWORDS: Semiconducting wafers, Computer simulations, Cadmium, Modulation, Detection and tracking algorithms, Electron beam lithography, Electron beams, Electron beam direct write lithography, Point spread functions, Nanoelectronics

Read Abstract +

Proceedings Article | 2 April 2011 Paper

Geometrically induced dose correction: method and performance results

R. Galler, K.-H. Choi, M. Gutsch, C. Hohle, M. Krueger, L. Ramos, M. Suelzle, U. Weidenmueller

Proceedings Volume 7985, 79850S (2011) https://doi.org/10.1117/12.895205

KEYWORDS: Electron beam lithography, Line edge roughness, Cadmium sulfide, Photoresist processing, Chemically amplified resists, Cadmium, Scattering, Backscatter, Lithography, Modulation

Read Abstract +

Proceedings Article | 25 September 2010 Paper

Geometrically induced dose correction method for e-beam lithography applications

R. Galler, K.-H. Choi, M. Gutsch, C. Hohle, M. Krueger, L. E. Ramos, M. Suelzle, U. Weidenmueller

Proceedings Volume 7823, 78231E (2010) https://doi.org/10.1117/12.864263

KEYWORDS: Electron beam lithography, Line edge roughness, Cadmium sulfide, Scattering, Laser scattering, Convolution, Photoresist processing, Modulation, Chemically amplified resists, Electron beams

Read Abstract +

Proceedings Article | 27 May 2010 Paper

Practical resist model calibration for e-beam direct write processes

Martin Schulz, Hans-Jürgen Stock, Ulrich Klostermann, Wolfgang Hoppe, Lars Bomholt, Philipp Jaschinsky, Kang-Hoon Choi, Manuela Gutsch, Holger Sailer, Stephan Martens

Proceedings Volume 7748, 774818 (2010) https://doi.org/10.1117/12.866695

KEYWORDS: Calibration, Monte Carlo methods, Photoresist processing, Electron beam lithography, Data modeling, Process modeling, Scanning electron microscopy, Computer simulations, Scattering, Chemically amplified resists

Read Abstract +

Proceedings Article | 15 May 2010 Paper

Checkerboard pattern for PSF parameter determination in electron beam lithography

Manuela Gutsch, Kang-Hoon Choi, Martin Freitag, Marc Hauptmann, Christoph Hohle, Philipp Jaschinsky, Katja Keil

Proceedings Volume 7545, 754507 (2010) https://doi.org/10.1117/12.864315

KEYWORDS: Point spread functions, Scattering, Electron beam lithography, Laser scattering, Chemically amplified resists, Optical microscopes, Lithography, Photoresist processing, Electron beams, Silicon

Read Abstract +

Proceedings Article | 3 April 2010 Paper

Conventional and reversed image printing in electron beam direct write lithography with proximity effect corrections based on dose and shape modification

Kang-Hoon Choi, Manuela Gutsch, Martin Freitag, Katja Keil, Philipp Jaschinsky, Christoph Hohle

Proceedings Volume 7637, 76370W (2010) https://doi.org/10.1117/12.846514

KEYWORDS: Electron beam direct write lithography, Cadmium sulfide, Image processing, Printing, Line width roughness, Line edge roughness, Electron beams, Point spread functions, Photoresist processing, Metrology

Read Abstract +

Showing 5 of 23 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years