A Nuclear Pumped Flashlamp (NPF) is closely related to a Nuclear-Pumped Laser NPL in that both use nuclear radiation to excite the medium. The NPF does not require as high peak power as is needed for NPL inversion. Still, with a reactor source, a large volume NPF can be designed to deliver extremely large fluorescence in the UV up to the infrared range, depending on the media employed. The NPF can then be used for industrial applications or for pumping a laser requiring a high intensity light pump. The first experimental example of this approach was a 3He-XeBr2 NPF employed in 1993 to pump a small iodine laser. The present paper discusses issues involved in scaling such a NPF up to an ultra high energy output.
Due to pump source restrictions, Nuclear-Pumped Lasers (NPLs) typically have relatively long (micro- to milli-second) pulse lengths with only modest peak powers but with very high total energy. These pump power restraints seriously limit the choice of laser media. One way to avoid this problem is to employ a Nuclear Driven Flashlamp (NDF) for the primary pumped element in the system. The fluorescence from this NDF can then be used for pumping a laser or for other high intensity light applications. The first experimental example of this approach was a 3He-XeBr2 NDF employed by Williams and Miley (1993) to pump a small iodine laser. The present paper discusses issues involved in scaling such an NDF up to high power levels. Possible optimum configurations include use of microsphere or fiber pump elements dispersed in the NPF media. Analysis of such possibilities is presented along with consideration of special reflecting surface designs.
Anisul Khan, Jon Meese, Earl Charlson, Elaine Charlson, Tina Stacy, Salim Khasawinah, T. Sung, Galina Popovici, Mark Prelas, J. Chamberlain, Henry White
Aluminum nitride (AlN) films were grown by chemical vapor deposition (CVD) on boron-doped diamond films deposited by the hot-filament CVD (HFCVD) method. The films were characterized by scanning electron microscopy, x-ray diffraction, and Raman spectroscopy. The electrical characterization of the AlN/diamond interface was performed by current-voltage (I-V) and capacitance- voltage measurements. The resulting films showed one x-ray diffraction peak of (100) oriented AlN and three diamond diffraction peaks of (111), (220) and (331) orientation. The Raman spectra showed two peaks, one at 660 cm-1 due to scattering by the AlN lattice and the other at 1335 cm-1 by the diamond lattice. The I-V measurements on the metal(W)/diamond/Si/Al structure showed ohmic behavior from which the diamond film resistivity of 5 X 105 (Omega) -cm was estimated. The I-V measurements on the W/AlN/diamond/Si/Al structure showed rectifying behavior. The capacitance of the film was independent of the applied voltage and was dominated by the diamond bulk capacitance.
This paper is a review on would-be donor impurities in diamond lattice: N, P, Li, and Na. Other impurities like oxygen and sulfur are also discussed. As the solubility of donor impurities in the diamond lattice is predicted to be low, new methods of forcing the introduction of impurities into the diamond lattice are discussed. We propose a new method of electric-field-assisted diffusion and a method of increasing the sticking coefficient of the impurities by growth under electric bias. We also discuss the method of ion-assisted doping during growth proposed by a research group from SI Technologies.
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