Type-II superlattices (T2SLs) are considered the III/V alternative to HgCdTe for infrared (IR) detectors and have already reached market maturity. Fraunhofer IAF has demonstrated mono- and bi-spectral T2SL focal plane arrays up to 640×512 pixels for mid- and long-wavelength IR. In order to develop an industry-compatible T2SL technology, we have established the complete chain for detector array fabrication including design and modelling, epitaxial growth, as well as front- and backside processing. The epitaxial growth of T2SLs is performed by molecular beam epitaxy (MBE) in multi-wafer reactors. In this paper, we report on the control of growth rates during epitaxy, uniformity and reproducibility of the growth process, as well as characterization techniques to monitor the quality of the epitaxial layers. For the superlattice period, an average thickness variation far below a single atomic monolayer is required and achieved routinely. The standard deviation of the photoluminescence peak for both colors of bi-spectral IR detectors is around 0.04 μm for consecutive growth runs. With this very stable and reproducible epitaxial growth process in conjunction with our mature front- and backside processing we have been able to set up a pilot line production for bi-spectral T2SL IR detector arrays.
Through the choice of appropriate layer thicknesses, the bandgap of InAs/Ga(As)Sb type II superlattices (T2SLs) can be engineered in a wide range covering the mid-wavelength and long-wavelength infrared (MWIR, 3 μm - 5 μm and LWIR, 8 μm - 12 μm) spectral regions. Using this material system, Fraunhofer IAF develops bi-spectral MWIR image sensors based on homojunction photodiodes for missile warning applications and pursues modern heterojunction approaches as well as heteroepitaxial growth of T2SLs on GaAs. We discuss topics arising from efforts to improve the manufacturability of our bi-spectral arrays and report on the progress of the integration with MWIR heterojunction designs that exhibit reduced dark currents.
A detailed understanding of limiting dark current mechanisms in InAs/GaSb type-II superlattice (T2SL) infrared detectors is key to improve the electrooptical performance of these devices. We present a six-component dark current analysis which, for the first time, takes account of sidewall-related dark current contributions in mesa-etched T2SL photodiodes. In a wide temperature range from 30K to 130K, the paper compares limiting mechanisms in two homojunction T2SL photodiode wafers for the long-wavelength infrared regime. While the two epi wafers were fabricated with nominally the same frontside process they were grown on different molecular beam epitaxy systems. In the available literature a limitation by Shockley-Read-Hall processes in the space charge region giving rise to generation-recombination (GR) dark current is the prevailing verdict on the bulk dark current mechanism in T2SL homojunction photodiodes around 77K. In contrast, we find that investigated photodiode wafers are instead limited by the diffusion mechanism and the ohmic shunt component, respectively. Furthermore, our in-depth analysis of the various dark current components has led to an interesting observation on the temperature dependence of the shunt resistance in T2SL homojunction photodiodes. Our results indicate that the GR and the shunt mechanism share the same dependence on bandgap and temperature, i.e., a proportionality to exp(-Eg/2kT).
For surveillance and reconnaissance applications in the short-wave infrared (SWIR) spectral range, the imaging systems have to cope with usually very low photon flux densities. Thus, dark-current and noise characteristics of the focal plane array (FPA) are demanding. On the other hand, the challenge of detecting extremely low photocurrents can be mitigated by utilizing an internal gain as provided by avalanche photodiodes (APDs). Fraunhofer IAF has recently started the development of InGaAs-based SWIR detectors. We report on the current development status covering design considerations, epitaxy, process technology and electro-optical characterization. Detector structures based on both, classical InGaAs PIN homojunction diodes as well as InGaAs/InAlAs APDs in separated-absorption-grading-charge-and-multiplication layer heterostructures, have been grown by molecular beam epitaxy on InP. Diodes structures were fabricated with a dry-etch mesa process and a subsequent dielectric passivation of the mesa sidewalls. High-resolution FPAs with 640 x 512 pixels and a 15 μm pixel pitch based on PIN diodes have been assembled to a SWIR camera system in cooperation with AIM Infrarot-Module GmbH. Design variations, in particular for the APDs, were assisted by band-edge-profile simulations. APD test structures as well as fan-out hybrids have been characterized, revealing gain values larger than 300 at room temperature.
We report on the development and optimization of mesa-processed InGaAs/InAlAs avalanche photodiodes (APD)
for short-wave infrared applications with demand for high gain and low breakdown voltage. The APDs were
grown by molecular beam epitaxy. Dark and photo current measurements of fully processed APDs reveal high
dynamic range of 104 and gain larger than 40 for 25 V reverse bias voltage and cooled operation at 140 K. A
maximum gain larger than 300 is demonstrated for room temperature as well as 140 K. Two different approaches
to determine the gain of the APD structures are discussed.
To enable higher operating temperatures in InAs/GaSb superlattice detectors for the long-wavelength infrared atmospheric window at 8-12 μm, a reduction of the bulk dark current density is indispensable. To reduce the dark current of conventional homojunction pin-diode device designs, bandstructure-engineering of the active region is considered most promising. So far, several successful device concepts have been demonstrated, yet they all rely on the inclusion of Aluminum within the active layers. Driven by manufacturing aspects we propose an Al-free heterojunction device concept that is based on a p+-doped InAs/GaSb superlattice absorber layer combined with an adjacent N--doped high gap region, which again is realized with an InAs/GaSb superlattice. To calculate the superlattice band gap and the position of the conduction band edge at the heterojunction we employ the Superlattice Empirical Pseudopotential Method. With a series of three heterojunction p+N- InAs/GaSb superlattice devices with an absorber band gap of 124 meV (10.0 μm) we give a first proof of the advocated device concept.
InAs/GaSb superlattices are characterized by a broken-gap type II band alignment. Their effective band gap can be engineered to match mid to long wavelength infrared (IR) photon energies. Fraunhofer IAF has developed image detectors for threat warning systems based on this material system that are capable of spatially and temporally coincident detection in two mid-IR wavelength ranges. We review the present status of the processing technology, report continuous improvements achieved in key areas of detector performance, including defect density and noise behavior, and present initial results for statistical characterization of ensembles of detector elements with respect to diode characteristics and noise.
Fraunhofer IAF can look back on many years of expertise in developing high-performance infrared photodetectors. Since
pioneering the InAs/GaSb type-II superlattice detector development, extensive capabilities of epitaxy, process
technology, and device characterization of single element detectors and camera arrays for the mid- and longwave
infrared (MWIR and LWIR) have been established up to the level of small-scale production. Bispectral MWIR/MWIR
and MWIR/LWIR cameras based on type-II superlattices or HgCdTe are key topics at Fraunhofer IAF. Moreover, the
development of InGaAs-based short-wave infrared (SWIR) photodetectors for low-light-level applications has recently
been initiated.
In this contribution, we report on the status of recent photodetector development activities at IAF, covering detector
design, epitaxial growth, process technology, and most recent electro-optical characterization results of focal plane
arrays as well as single element detectors especially for the SWIR based on InGaAs material system.
We report on materials and technology development for short-wave infrared photodetectors based on InGaAs p-i-n and avalanche photodiodes (APDs). Using molecular beam epitaxy for the growth of thin layers with abrupt interfaces, which are required for optimized APD structures, excellent crystalline quality has been achieved for detector structures grown on 3-inch InP substrates. For the fabrication of focal plane detector arrays, we employed a mesa etching technology in order to compare the results with the commonly utilized planar technology. Camera detector arrays as well as test structures with various sizes and geometries for materials and process characterization are processed using a dry-etch mesa technology. Aspects of the process development are presented along with measured dark-current and photo-current characteristics of the detector devices.
To examine defects in InAs/GaSb type-II superlattices we investigated GaSb substrates and epitaxial InAs/GaSb layers
by synchrotron white beam X-ray topography to characterize the distribution of threading dislocations. Those
measurements are compared with wet chemical etch pit density measurements on GaSb substrates and InAs/GaSb type-II
superlattices epitaxial layer structures. The technique uses a wet chemical etch process to decorate threading dislocations
and an automated optical analyzing system for mapping the defect distribution.
Dark current and noise measurements on processed InAs/GaSb type-II superlattice single element photo diodes reveal a
generation-recombination limited dark current behavior without contributions by surface leakage currents for midwavelength
infrared detectors. In the white noise part of the noise spectrum, the extracted diode noise closely matches
the theoretically expected shot noise behavior.
For diodes with an increased dark current in comparison to the dark current of generation-recombination limited
material, the standard shot-noise model fails to describe the noise experimentally observed in the white part of the
spectrum. Instead, we find that McIntyre’s noise model for avalanche multiplication processes fits the data quite well.
We suggest that within high electric field domains localized around crystallographic defects, electrons initiate avalanche
multiplication processes leading to increased dark current and excess noise.
The noise behavior of InAs/GaSb superlattice photodiodes for high-performance thermal imaging in the mid- and longwavelength
infrared atmospheric windows at 3-5 μm and 8-12 μm is complex and up to now not very well understood.
In order to characterize these devices we have developed a noise measurement setup with a noise current resolution in
the femtoampère range. First, we show that, when sidewall leakage is absent, InAs/GaSb superlattice photodiodes with a
low dark current very close to the generation-recombination limited dark current level of the bulk behave according to
the well-known shot noise expression. Next, we investigate a set of 18 large-area diodes with a bandgap in the midwavelength
infrared regime, which show an increased dark current depending linearly on the applied reverse bias. For
these diodes the common shot noise model generally fails to describe the noise experimentally observed in the white part
of the noise spectrum. Instead, we find that McIntyre’s excess noise model for electron-initiated avalanche multiplication
processes fits our data remarkably well for the entire set of diodes, which covers about three orders of magnitude in dark
current and a wide range of reverse bias voltage. Thus, to explain the mechanism leading to the increased reverse dark
current and observed excess noise we tentatively suggest that primary electrons originating from Shockley-Read-Hall
states within the space charge region might initiate avalanche multiplication processes within high electric field domains
localized around sites of macroscopic crystallographic defects.
3rd generation IR modules - dual-color (DC), dual-band (DB), and large format two-dimensional arrays - require
sophisticated production technologies such as molecular beam epitaxy (MBE) as well as new array processing
techniques, which can satisfy the rising demand for increasingly complex device structures and low cost detectors. AIM
will extend its future portfolio by high performance devices which make use of these techniques. The DC MW / MW
detectors are based on antimonide type-II superlattices (produced by MBE at Fraunhofer IAF, Freiburg) in the 384x288
format with a 40 μm pitch. For AIM, the technology of choice for MW / LW DB FPAs is MCT MBE on CdZnTe
substrates, which has been developed in cooperation with IAF, Freiburg. 640x512, 20 μm pitch Focal Plane Arrays
(FPAs) have been processed at AIM. The growth of MW MCT MBE layers on alternate substrates is challenging, but
essential for competitive fabrication of large two-dimensional arrays such as megapixel (MW 1280x1024, 15 μm pitch)
FPAs. This paper will present the development status and latest results of the above-mentioned 3rd Gen FPAs and
Integrated Detector Cooler Assemblies (IDCAs).
InAs/GaSb-based type-II superlattice photodiodes have considerably gained interest as high-performance infrared
detectors. Beside the excellent properties of InAs/GaSb superlattices, like the relatively high effective electron mass
suppressing tunneling currents, the low Auger recombination rate, and a high quantum efficiency, the bandgap can be
widely adjusted within the infrared spectral range from 3 - 30 μm depending on the layer thickness rather than on
composition. Superlattice growth and process technology have shown tremendous progress during the last years. Fully
integrated superlattice cameras have been demonstrated by several groups worldwide.
Within very few years, the InAs/GaSb superlattice technology has proven its suitability for high-performance infrared
imaging detector arrays. At Fraunhofer IAF and AIM, the efforts have been focused on developing a mature fabrication
technology for bispectral InAs/GaSb superlattice focal plane arrays for a simultaneous, co-located detection at 3-4 μm
and 4-5 μm in the mid-wavelength infrared atmospheric transmission window. A very low number of pixel outages and
cluster defects is mandatory for dual-color detector arrays. Sources for pixel outages are manifold and might be caused
by dislocations in the substrate, the epitaxial growth process or by imperfections during the focal plane array fabrication
process. Process refinements, intense root cause analysis and specific test methodologies employed at various stages
during the process have proven to be the key for yield enhancements.
InAs/GaSb short-period superlattices (SL) have proven their large potential for high performance focal plane array
infrared detectors. Lots of interest is focused on the development of short-period InAs/GaSb SLs for mono- and bispectral
infrared detectors between 3 - 30 μm. InAs/GaSb short-period superlattices can be fabricated with up to 1000
periods in the intrinsic region without revealing diffusion limited behavior. This enables the fabrication of InAs/GaSb SL
camera systems with very high responsivity, comparable to state of the art CdHgTe and InSb detectors. The material
system is also well suited for the fabrication of dual-color mid-wavelength infrared InAs/GaSb SL camera systems.
These systems exhibit high quantum efficiency and offer simultaneous and spatially coincident detection in both spectral
channels.
An essential point for the performance of two-dimensional focal plane infrared detectors in camera systems is the
number of defective pixel on the matrix detector. Sources for pixel outages are manifold and might be caused by the
dislocation in the substrate, the epitaxial growth process or by imperfections during the focal plane array fabrication
process. The goal is to grow defect-free epitaxial layers on a dislocation free large area GaSb substrate. Permanent
improvement of the substrate quality and the development of techniques to monitor the substrate quality are of particular
importance. To examine the crystalline quality of 3" and 4" GaSb substrates, synchrotron white beam X-ray topography
(SWBXRT) was employed. In a comparative defect study of different 3" GaSb and 4" GaSb substrates, a significant
reduction of the dislocation density caused by improvements in bulk crystal growth has been obtained. Optical
characterization techniques for defect characterization after MBE growth are employed to correlate epitaxially grown
defects with the detector performance after hybridization with the read-out integrated circuit.
In the past years, the development of the type-II InAs/GaSb superlattice technology at the Fraunhofer-Institute for
Applied Solid State Physics (IAF) has been focused on achieving series-production readiness for third generation dualcolor
superlattice detector arrays for the mid-wavelength infrared spectral range. The technology is ideally suited for
airborne missile threat warning systems, due to its ability of low false alarm remote imaging of hot carbon dioxide
signatures on a millisecond time scale. In a multi-wafer molecular beam epitaxy based process eleven 288×384 dualcolor
detector arrays are fabricated on 3" GaSb substrates. Very homogeneous detector arrays with an excellent noise
equivalent temperature difference have been realized. The current article presents the type-II superlattice dual-color
technology developed at IAF and delivers insights into a range of test methodologies employed at various stages during
the fabrication process, which ensure that the basic requirements for achieving high detector performance are met.
InAs/GaSb short-period superlattices (SL) based on GaSb, InAs and AlSb have proven their great potential for high
performance infrared detectors. Lots of interest is currently focused on the development of short-period InAs/GaSb SLs
for advanced 2nd and 3rd generation infrared detectors between 3 - 30 μm. For the fabrication of mono- and bispectral
thermal imaging systems in the mid-wavelength infrared region (MWIR) a manufacturable technology for high
responsivity thermal imaging systems has been developed. InAs/GaSb short-period superlattices can be fabricated with
up to 1000 periods in the intrinsic region without revealing diffusion limited behavior. This enables the fabrication of
InAs/GaSb SL camera systems with high responsivity comparable to state of the art CdHgTe and InSb detectors. The
material system is also ideally suited for the fabrication of dual-color MWIR/MWIR InAs/GaSb SL camera systems with
high quantum efficiency for missile approach warning systems with simultaneous and spatially coincident detection in
both spectral channels.
A mature production technology for Quantum Well Infrared Photodetector (QWIP) focal plane arrays (FPAs) and
InAs/GaSb superlattice (SL) FPAs has been developed. Dual-band and dual-color QWIP- and SL-imagers are
demonstrated for the 3-5 μm and 8-12 μm atmospheric windows in the infrared. The simultaneous, co-located detection
of both spectral channels resolves the temporal and spatial registration problems common to existing bispectral IRimagers.
The ability for a reliable remote detection of hot CO2 signatures makes tailored dual-color superlattice imagers
ideally suited for missile warning systems for airborne platforms.
InAs/GaSb type-II short-period superlattice (SL) photodiodes have been shown to be very promising for 2nd and 3rd
generation thermal imaging systems with excellent detector performance. A multi-wafer molecular beam epitaxy (MBE)
growth process on 3"-GaSb substrates, which allows simultaneous growth on five substrates with excellent homogeneity
has been developed. A reliable III/V-process technology for badge processing of single-color and dual-color FPAs has
been set up to facilitate fabrication of mono- and bi-spectral InAs/GaSb SL detector arrays for the mid-IR spectral range.
Mono- and bispectral SL camera systems with different pitch and number of pixels have been fabricated. Those imaging
systems show excellent electro-optical performance data with a noise equivalent temperature difference (NETD) around
10 mK.
In Germany, InAs/GaSb superlattice detector technology for the mid-wavelength infrared spectral range has been
intensively developed in recent years. Mid-IR InAs/GaSb superlattice photodiodes achieve a very high quantum
efficiency. The world's first high-performance infrared imagers based on InAs/GaSb superlattices were realized offering
high spatial and excellent thermal resolution at short integration times. Additionally, the technology for dual-color
superlattice detectors featuring simultaneous, pixel-registered detection of two separate spectral regimes in the mid-IR
has been developed. Due to the ability to detect signatures of hot carbon dioxide, dual-color superlattice detectors are
ideally suited for missile alerting sensors. The capability for small volume production of InAs/GaSb superlattice
detectors has been established.
3rd Generation IR detectors providing e.g. dual-color capability are of great benefit for applications like aircraft missile approach warning systems using this feature for achieving low false alarm rates by separating the hot CO2 missile plume from background and clutter. AIM and IAF selected antimonide based type II Superlattices (SL) for such kind of applications. The type II SL technology provides an accurate engineering of sensitive layers by MBE with very good homogeneity and yield. IAF and AIM already managed to realize a dual-color 384x288 IR-Module based on this technology. It combines spectral selective detection in the 3-4 &mgr;m wavelength range and 4-5 &mgr;m wavelength range in each pixel with coincident integration in a 384x288x2 format and 40 &mgr;m pitch. Excellent thermal resolution with NETD < 17 mK @ F/2, 2.8 ms for the longer wavelength range (red color) and NETD < 30 mK @ F/2, 2.8 ms for the shorter wavelength range (blue color) were already reported. In order to increase further the quantum efficiency and subsequently decrease further the spectral crosstalk between the two colors the layer thickness of the SL-layer was optimized.
This paper is intended to present the current status and trends at AIM on antimonide type II Superlattices (SL) IR module developments for ground and airborne applications in the high performance range, where rapidly changing scenes - like e.g. in case of missile warning applications for airborne platforms - require temporal signal coincidence with integration times of typically 1ms.
InAs/GaSb short-period superlattices (SL) for the fabrication of mono- and bispectral thermal imaging systems in the
mid-wavelength infrared region (MWIR) have been optimized in order to increase the spectral response of the imaging
systems. The responsivity in monospectral InAs/GaSb short-period superlattices increases with the number of periods in
the intrinsic region of the diode and does not show a diffusion limited behavior for detector structures with up to 1000
periods. This allows the fabrication of InAs/GaSb SL camera systems with high responsivity. Dual-color MWIR/MWIR
InAs/GaSb SL camera systems with high quantum efficiency for missile approach warning systems with simultaneous
and spatially coincident detection in both spectral channels have been realized.
The fabrication and optimization of InAs/GaSb type-II superlattice (SL) detectors for single-color and dual-color focal
plane arrays in the mid-wavelength infrared spectral range between 3-5 &mgr;m is reported. Single color focal plane arrays
with 288 x 384 detector elements and 24 &mgr;m pitch have been fabricated with high pixel yield. Camera systems with
InAs/GaSb SL detectors reveal NETD values of 27.9 mK at a cut-off wavelength of &lgr;c = 4.9 &mgr;m for an integration time
of only 1 msec with F#/2.4 optics. A dual-color MWIR/MWIR InAs/GaSb SL camera, developed for missile approach
warning systems, features simultaneous and spatially coincident detection for both spectral channels on each pixel. The
camera system with 288 x 384 detector elements in 40 &mgr;m pitch shows excellent NETD values and high pixel
operability. The fabrication of dual-color focal plane arrays on 3" GaSb substrates is presented.
The 3rd generation of infrared (IR) detection modules is expected to provide advanced features like higher resolution
1024x1024 or 1280x720 pixels and/or new functions like multicolor or multi band capability, higher frame rates and
better thermal resolution. This paper is intended to present the current status and trends at AIM on antimonide type II
superlattices (SL) dual color detection module developments for ground and airborne applications in the high
performance range, where rapidly changing scenes - like e.g. in case of missile warning applications for airborne
platforms or ground based sniper detection systems - require temporal signal coincidence with integration times of
typically 1ms.
AIM and IAF selected antimonide based type II superlattices (SL) for such kind of applications. The type II SL
technology provides - similar to QWIP's - an accurate engineering of sensitive layers by MBE with very good
homogeneity and yield. IAF and AIM managed already to realize a dual color 384x288 IR module based on this
technology. It combines spectral selective detection in the 3 - 4&mgr;m wavelength range and 4 - 5 &mgr;m wavelength range in
each pixel with coincident integration in a 384x288x2 format and 40x40 &mgr;m2 pitch. Excellent thermal resolution with
NETD < 12 mK @ F/2, 2.8 ms for the longer wavelength range (red band) and NETD < 22 mK @ F/2, 2.8 ms for the
shorter wavelength range (blue band) were reported.
In the meantime a square design of 256x256x2 pixel with a reduced pitch of 30x30 &mgr;m2 is in preparation. In this case
with 2 Indium bumps per pixel and a third common contact for all pixels required for temporal coincidence is connected
at the outer area of the array. The fill factor is approx. 65% for both wavelength ranges. The reduced size of the array
enables the use of a smaller dewar with reduced cooling power and significantly reduced weight and broadens the scope
of applications where weight and costs is essential. Design aspects and expected performances are discussed.
The two-photon QWIP approach involves three equidistant subbands, two of which are bound in the quantum well, and
the third state is located in the continuum. The intermediate subband induces a resonantly enhanced optical nonlinearity,
which is about six orders of magnitude stronger than in usual semiconductors. Temporal resolution is only limited by the
sub-ps intrinsic time constants of the quantum wells, namely the intersubband relaxation time and the dephasing time of
the intersubband polarization. Both properties make this device very promising for pulse diagnostics of pulsed midinfrared
lasers. We have performed autocorrelation measurements of ps optical pulses from the free-electron laser (FEL)
facility FELBE at the Forschungszentrum Dresden Rossendorf. Using a rapid-scan autocorrelation scheme at a scan
frequency of 20 Hz, high-quality quadratic autocorrelation traces are obtained, yielding ratios close to the theoretically
expected value of 8:1 between zero delay and large delay for interferometric autocorrelation, and 3:1 for intensity
autocorrelation. Thus, two-photon QWIPs provide an excellent new technique for online pulse monitoring of the FEL. In
addition, we have investigated the saturation mechanism of the photocurrent signal, which is due to internal space
charges generated in the detector.
We report on the development of InAs/GaSb type-II superlattice focal plane arrays (FPAs) for missile warning systems
in airborne platforms. The FPA fabrication technology was developed on the basis of monospectral superlattices for the
MWIR (3-5 μm) spectral range. A monospectral 288×384 MWIR camera with 24 μm pixel pitch, a noise equivalent
temperature difference (NETD) better than 14 mK and a background-limited performance (BLIP) up to 92 K is
demonstrated. Based on the monospectral technology, the first bispectral superlattice camera was realized. The dual
color 288×384 superlattice camera features simultaneous, pixel-registered detection of both spectral channels between
3-4 μm and 4-5 μm with a NETD better than 30 mK and 17 mK, respectively. Hence, spatial or temporal registration
problems, which are common to most dual color and dual band infrared imagers are solved with the new bispectral
MWIR missile alerting sensor.
This paper is intended to present firstly the current status at AIM on quantum well (QWIP) and antimonide superlattices (SL) detection modules for multi spectral ground and airborne applications in the high performance range i.e. for missile approach warning systems and secondly presents possibilities with long linear arrays i.e. 576x7 MCT to measure spectral selective in the 2 - 11μm wavelength range.
QWIP and antimonide based superlattice (SL) modules are developed and produced in a work share between AIM and the Fraunhofer Institute for Applied Solid State Physics (IAF). The sensitive layers are manufactured by the IAF, hybridized and integrated to IDCA or camera level by AIM. In case of MCT based modules, all steps are done by AIM.
QWIP dual band or dual color detectors provide good resolution as long as integration times in the order of 5-10ms can be tolerated. This is acceptable for all applications where no fast motions of the platform or the targets are to be expected.
For spectral selective detection, a QWIP detector combining 3-5 μm (MWIR) and 8-10 μm (LWIR) detection in each pixel with coincident integration has been developed in a 384x288x2 format with 40 μm pitch. Excellent thermal resolution with NETD < 30 mK @ F/2, 6.8 ms for both peak wavelengths (4.8 μm and 8.0 μm) has been achieved. Thanks to the well established QWIP technology, the pixel outage rates even in these complex structures are well below 0.5% in both bands. The spectral cross talk between the two wavelength bands is equal or less than 1%. The substrate on the sensitive layer of the FPA was completely removed in this case and as a consequence the optical crosstalk in the array usually observed in QWIP arrays resulting in low MTF values was suppressed resulting in sharp image impression.
For rapidly changing scenes - like e.g. in case of missile warning applications for airborne platforms - a material system with higher quantum efficiency is required to limit integration times to typically 1ms. AIM and IAF selected antimonide based type II superlattices (SL) for such kind of applications. The type II SL technology provides - similar to QWIPs - an accurate engineering of sensitive layers by MBE with very good homogeneity and potentially good yield and resistivity against high temperature application i.e. under processing or storage. While promising results on single SL pixels have been reported since many years, so far no SL based detection module could be realized with reasonable performances. IAF and AIM last year managed to realize first most promising SL based detectors. Fully integrated IDCAs with a MWIR SL single color device with 256x256 pixels in 40 μm pitch have been integrated and tested. In the next step the pitch was reduced to 24μm in a 384x288 pixel configuration. With this design and further improved technology a very good pixel operabilities with very low cluster sizes (≤ 4 pixel) and performances with quantum efficiencies as high as known from MCT is reached in the meantime.
A dual color device based on SL technology on the existing 384x288 read-out circuit (ROIC) as used in the dual band QWIP device is available. It combines spectral selective detection in the 3-4.1 μm wavelength range and 4.1-5 μm wavelength range in each pixel with coincident integration in a 384x288x2 format and 40 μm pitch. Excellent thermal resolution with NETD < 17 mK @ F/2, 2.8 ms for the longer wavelength range (red band) and NETD < 30 mK @ F/2, 2.8 ms for the shorter wavelength range (blue band) has been achieved. The pixel outage rates remains below 1% in both colors. The spectral cross talk of the red band to the blue band is estimated below 1%o which is important to reduce significantly the false alarm rate in missile approach warning systems as the primarily intended use of the dual color detector is.
Real time analysis of gases, i.e. the detection of toxic or agent gases, by multi spectral detection in the IR used the characteristic infrared emission or absorption lines of different gas types. Spectroscopic systems consisting of a spectrometer with the need for large linear MCT array with small pixel sizes are used in this case. Possibilities are outlined to use long linear arrays, such as the 576x7 MCT detector, to perform spectral selective measurements in the 2-11μm wavelength range. For these applications a 576x7 MCT FPA is integrated in an open dewar cooler assy without window able to operate directly coupled in an evacuated and cooled spectrometer. The sensitivity of the array is consequently not limited by the transmission of a window for vacuum conservation in the full sensitive wavelength range of MCT up to the cut-off of 10.5 μm.
We report on bispectral imaging systems based on quantum-well infrared photodetectors (QWIPs) and InAs/GaSb type-II superlattices (SLs) for the mid-wavelength infrared spectral range between 3-5 μm (MW) and the longwavelength infrared regime at 8-12 μm (LW). A dual-band MW/LW QWIP imager and a dual-color MW/MW InAs/GaSb SL camera are demonstrated. The two systems offer a spatial resolution of 288×384 pixels and a simultaneous detection of both channels on each pixel. Both technologies achieve an excellent noise equivalent temperature difference below 30 mK in each channel with F#/2.0 optics.
The first fully operational mid-IR (3-5 μm) 256x256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detector chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement.
An infrared camera based on a 256x256 focal plane array for the Mid-IR spectral range (3-5 μm) has been realized for the first time with InAs/GaSb short-period superlattices. The detector shows a cut-off wavelength of 5.4 μm and reveals a quantum efficiency of 30%. The noise equivalent temperature difference (NETD) reaches 9.4 mK at 73 K with F/2 optics and 6.5 ms integration time. Excellent thermal images with low NETD values and a very good modulation transfer function are presented. Furthermore, a new method to passivate InAs/GaInSb superlattice photodiodes for the 8-10 μm regime is demonstrated. The approach is based on the epitaxial overgrowth of wet-etched mesa diodes using lattice matched AlGaAsSb. A complete suppression of surface leakage currents in small sized test diodes with 70 μm diameter is observed.
The 3rd generation of infrared (IR) detection modules is expected to provide advanced features like higher resolution 1024x1024 or 1280x720 pixels and/or new functions like multicolor or multi band capability, higher frame rates and better thermal resolution. This paper is intended to present the current status at AIM on quantum well (QWIP) and antimonide superlattices (SL) detection modules for ground and airborne applications in the high performance range. For spectral selective detection, a QWIP detector combining 3-5μm (MWIR) and 8-10μm (LWIR) detection in each pixel with coincident integration has been developed in a 384x288x2 format with 40 μm pitch. Excellent thermal resolution with NETD < 30mK @ F/2, 6.8 ms for both peak wavelengths (4.8 μm and 8.0 μm) has been achieved. Thanks to the well established QWIP technology, the pixel outage rates even in these complex structures are below 0.5% in both bands. QWIP dual band or dual color detectors provide good resolution as long as integration times in the order of 5-10ms can be tolerated. This is acceptable for all applications where no fast motions of the platform or the targets are to be expected. For rapidly changing scenes-like e.g. in case of missile warning applications for airborne platforms-a material system with higher quantum efficiency is required to limit integration times to typically 1ms. AIM and IAF selected antimonide based type II superlattices (SL) for such kind of applications. The SL technology provides-similar to QWIP's-an accurate engineering of sensitive layers by MBE with very good homogeneity and yield. While promising results on single SL pixels have been reported since many years, so far no SL based detection module could be realized. IAF and AIM last year managed to realize first most promising SL based detectors. Fully integrated IDCA's with a MWIR SL device with 256x256 pixels in 40µm pitch have been integrated and tested. The modules exhibit excellent thermal resolution of NETD<10mk @ F/2 and 5ms. Product improvement meanwhile allowed to reduce pixel outage rates below 1% i.e. down to a level as required for the military use of such detectors. Presently under development is therefore a dual color MWIR device based on SL technology and the existing 384x288 read out circuit (ROIC) used in the dual band QWIP device. This detector is primarily intended for the use in missile approach warning systems where the dual color capability significantly improves suppression of false alarms. Details of the modules and results of the electrooptical performance will be presented for the different items mentioned above.
Quantum well infrared photodetectors (QWIPs) have gained maturity for large focal plane arrays (FPA) with excellent thermal resolution, low 1/f noise, low fixed-pattern noise, and high pixel operability. Due to their spectrally narrow absorption, QWIPs are particularly suitable for thermal imaging applications involving several atmospheric transmission bands or several colors within the same band. We report on our progress on dual-band QWIP FPAs with pixel-registered, simultaneous integration in both bands. The arrays with 384x288 pixels and 40 μm pitch are based on a photoconductive QWIP for the 3-5 μm regime (MWIR) and a photovoltaic "low-noise" QWIP for 8-12 μm (LWIR). Excellent noise-equivalent temperature differences of only 20.6 mK (LWIR) and 26.7 mK (MWIR) have been achieved at 6.8 ms integration time and f/2 aperture. In addition, we have investigated test devices with different gratings, and discuss their dual-band coupling efficiencies.
The 3rd generation of infrared (IR) detection modules is expected to provide advanced features like higher resolution 1024x1024 or 1280x720 pixels and/or new functionalities like multicolor or multi band capability, higher frame rates and better thermal resolution. This paper is intended to present the current status at AIM on the Mercury Cadmium Telluride (MCT), quantum well (QWIP) and antimonide superlattices (SL) detection modules for ground and airborne applications in the high performance range. For high resolution a 1280x720 MCT device in the 3-5μm range (MWIR) is presently under development. For spectral selective detection, a QWIP detector combining MWIR and 8-10μm (LWIR) detection in each pixel has been developed in a 384x288x2 format with 40 μm pitch, NETD < 35mK @ F/2, 6,8 ms for both peak wavelengths (4.8 μm and 8.0 μm). The device provides synchronous integration of both bands for temporal and spatial coincidence of the events observed. QWIP dual band or dual color detectors provide good resolution as long as integration times in the order of 5-10ms can be tolerated. This is acceptable for all applications where no fast motions of the platform or the targets are to be expected. For rapidly changing scenes - like e.g. in case of missile warning applications for airborne platforms - a material system with higher quantum efficiency is required to limit integration times to typically 1ms. For this case, several companies work on molecular beam epitaxy (MBE) of MCT to have access to double or multi layer structures. AIM and IAF selected antimonide based type II superlattices (SL) for such kind of applications. The SL technology provides -- similar to QWIP's -- an accurate engineering of sensitive layers by MBE with very good homogeneity and yield. While promising results on single SL pixels have been reported since many years, so far no SL based detection module could be realized. Just recently, IAF and AIM managed to realize first most promising SL based detectors. Fully integrated IDCAs with a MWIR SL device with 256 x 256 pixels in 40 μm pitch have been integrated and tested. The modules exhibit excellent thermal resolution of NETD > 12 mk @ F/2 and 5 ms. The next step will now be to stabilize the technology and to start the development of a dual color MWIR device based on SL technology and the existing 384 x 288 read out circuit (ROIC) used in the dual band QWIP device.
We report on our QWIP focal plane array (FPA) developments for the
8 - 12 μm and 3 - 5 μm regimes. In the long-wavelength infrared, we have realized several types of QWIP FPAs with array sizes from 256 × 256 to 640 × 512 pixels and with different active regions, giving rise to photoconductive and photovoltaic operation, respectively. Best thermal resolution in the 8 - 12 μm regime is obtained with low-noise QWIP FPAs which are based on a photovoltaic QWIP structure. Special emphasis is given to our work on a 640 × 512 mid-wave QWIP FPA, which is based on strained InGaAs/AlGaAs quantum wells lattice matched to a GaAs substrate. By optimizing the carrier concentration and the geometry of the two-dimensional grating with 1.65 μm period, a high quantum efficiency of more than 10% in the long-wavelength part of the 3 - 5 µm regime is achieved, resulting in an excellent thermal resolution of only 14.3 mK.
For applications like missile warning and automatic target recognition, AIM is presently launching its new 3rd generation high speed dual-color module. The focal plane array (FPA) is a mercury cadmium telluride (MCT) 192x192 56micrometers pitch device in a dual-color mid wave (MWIR) design. The module provides spectral selection with temporal and spatial coincidence for both colors using a new AIM proprietary technology. The spectral bands presently selected are 3.4-4 and 4.2-5micrometers with a full frame rate of 870Hz. Prior to the new devices, a sequential multicolor MCT camera with broadband detector and spectral selection using a rotating filter wheel was developed and evaluated. Results are shown to demonstrate the capabilities of spectral selective detection specifically for clutter and false alarm suppression in missile warning applications. A new algorithm was developed to allow highly sensitive detection of missile plumes without any need for non-uniformity correction for long-term stable operation and maximum dynamic range. An outlook is given on new activities at AIM on dual-band devices. The dual-band approach combining mid wave (MWIR) and long wave (LWIR) detection is specifically useful in automatic target recognition. The application, existing devices and the design goal of the new dual-band device are discussed together with experimental results.
Low NETD's, coupled with other improvements in camera design and manufacturing, helps to further enable a new class of very demanding imaging applications in medicine and medical research.. The evolution of QWIP FPA over the past five years, with their low NETD, detector uniformity, and high pixel yield, along with improvements in camera control and processing electronics, represents key technical innovations responsible for the reemergence of medical infrared imaging through the development of a new infrared medical imaging technique called Dynamic Infrared Imaging or DIRI. The QWIP's high thermal and spatial resolution coupled with very fast data acquisition capabilities fill the essential requirements of DIRI. Other features required by DIRI applications are the need for stable operation with drifts in the image below a few mK, which allow longer data collecting time. Longer data collection time provides the camera the capability to detect the functional behavior of the autonomic nervous system which operates on a time scale of 0.1 to 0.2Hz.
We present recent progress achieved in the development of type-I GaInAsSb/AlGaAsSb quantum-well (QW) lasers covering the 1.74-2.34micrometers spectral range. Diode lasers based on the broadened waveguide design comprising 3 Qws have been studied in detail. Laser structures emitting at 2.23 micrometers exhibited a record high internal quantum efficiency of 89%, internal loss of 6.8cm-1, and threshold current density at infinite cavity length as low as 120 A/cm2, indicating the superior quality of these devices. For the 2micrometers lasers a high characteristic temperature of 179K for the threshold current was achieved for temperatures between 250 and 280 K. In order to investigate the heterobarrier leakage associated with thermally activated carriers, laser structures emitting at 2.23micrometers with different Al- concentrations in the barriers and separate confinement regions have been studied. While the structure with 40% Al revealed the highest To of 103K, the laser with 20% Al yielded the best power efficiency, with a maximum value of 30%. 1.7W in cw mode at room temperature has been achieved for broad area single emitters at (lambda) =2 micrometers , with high-reflection/antireflection coated mirror facets, mounted epi-side down. As an application, tunable diode lasers absorption spectroscopy (TDLAS) sensing small concentrations of methane has been demonstrated using our 2.3micrometers diode laser.
Semiconductor lasers with high beam quality and high optical output power are very attractive for a variety of applications such as optical pumping of solid-state lasers, fiber amplifiers and medical treatment. When easy and low- cost fabrication is a further requirement, devices based on tapered gain sections are the most promising candidates. Low modal gain, single quantum well InGaAs/AlGaAs devices emitting at 940 nm were grown by molecular beam epitaxy. The lateral design consists of a tapered gain guided and a ridge-waveguide section having an overall length between 2 mm and 3 mm. Whereas the length of the tapered structure determines the high output power, the high brightness requires a ridge-waveguide structure with sufficient length. Here the length of the ridge section has been chosen to 500 micrometers . We achieved an optical output power of up to 5.3 W at room temperature in continuous wave mode. The threshold current density depends on the tapered length with values between 200 A/cm2 and 650 A/cm2. The slope efficiency is around 0.9 W/A for all devices. The wall plug efficiency reaches 44% at a current of 3 A. The beam quality factor remains nearly constant up to about 2.2 W having an M2-value of 1.3. At higher optical powers M2 increases fast. The lifetime of such devices has been extrapolated to more than 7500 h at room temperature.
Within the last few years, high power laser diodes with remarkable improvements concerning output power, efficiency, and reliability have been investigated in the wavelength range between 780 nm and 1064 nm. A lot of the work has been focused on 980 nm, the pump wavelength of Erbium Doped Fiber Amplifiers (EDFAs). Pumping of EDFAs requires highest performance diode lasers due to extreme demands in reliability and beam quality. Up to now, the only type of diode laser used in this application is a single-stripe or ridge-laser which emits in a diffraction-limited optical mode and can therefore be coupled into a single-mode fiber with high efficiency. The small stripe-width limits the reliable output power of these devices to about 300 mW resulting in a fiber coupled output power of less than 250 mW. In the following we report on high-power 980 nm diode lasers comprising ridge and tapered sections for near diffraction limited output power in the watt regime. The devices are based on MBE grown layer structures in the AlInGaAs material system. They allow for more than 500 mW of optical power coupled into a single mode fiber. First reliability tests show extrapolated lifetimes of more than 7.500 h at an output power of 1.8 W.
According to the common understanding, the 3rd generation of infrared (IR) detection modules is expected to provide advanced functionalities like more pixels, multicolor or multiband capability, higher frame rates and better thermal resolution. This paper is intended to present the present status at AIM on such technologies. A high speed device with 256 X 256 pixels in a 40μm pitch is designed to provide up to 800 Hz full frame rate with pixel rates as high as 80 Mpixels/s. The read out circuit is designed to stare while scan in a flash integration mode to allow nearly full frame integration for even 800 Hz frame rate. A miniaturized command and control electronics with 14 Bit deep digital output and a non uniformity correction board capable to take into account non linear self learning scene based correction models are developed together with the integrated detector cooler assembly (IDCA). As working horse for dual color/band capabilities, AIM has developed a sequential multi color module to provide customers with a flexible tool to analyze the pros and cons of spectral selective detection. The module is based on a 384x288 mercury cadmium telluride (MCT) detector available in the mid wave (MWIR) or long wave spectral band (LWIR). A rotating wheel with 4 facets for filters or microscanner plates provides spectral selectivity. AIM's programmable MVIP image processing is used for controlling the detector and for non uniformity correction. The MVIP allows set the integration time and NUC coefficients individually for each filter position for comparable performance to accurately evaluate the pay off of spectral selectivity in the IR. In parallel, a dual color detector FPA is under development. The FPA is realized as a MCT MWIR device, LWIR, however, is also doable. Dual color macro cells are realized with 192x192 pixels in a pitch of effectively 56 μm. The cell design provides, that both colors detect radiation from target points identical within the limited resolution of the optics to ensure coincident detection plus compensates the significant variation in photon flux of the different colors to output the analog signal at approximately the same level for good thermal resolution and correctability. The photovoltaic device is realized using AIM's mature liquid phase epitaxy. Since quantum well (QWIP) technology has proven state of the art results based on a well established material system, AIM is heading for QWIP devices for most affordable solutions in the MWIR/LWIR dual band applications. A summary of state of the art results achieved so far as basis for a QWIP dual band detector is presented.
We experimentally compare the peak responsivity R, gain g, quantum efficiency, and detectivity of GaAs/AlGaAs-QWIPs with devices based on the competing material system InGaAs/GaAs. For this purpose we use a typical n-type GaAs/AlGaAs-QWIP and three n-type InGaAs/GaAs-QWIPs with varying doping densities. R and g of the GaAs/AlGaAs-QWIP show a typical negative differential behavior, while both quantities grow monotonously with increasing bias voltage in the case of the InGaAs/GaAs-QWIPs. For identical nominal doping densities and similar cutoff wavelengths between 8.9 micrometers and 9 micrometers , InGaAs/GaAs-QWIPs show much higher responsivities than GaAs/AlGaAs-QWIPs. The ratio between these responsivities is 2.5 at the bias voltage where the GaAs/AlGaAs-QWIP has its maximum. By making use of the different bias dependence of the responsivity in both types of QWIPs a further enhancement of this factor is achieved. Nevertheless, both types of QWIPs show comparable detectivities. This is due to the fact that the gain has a negligible influence on the detectivity. In conclusion, InGaAs/GaAs-QWIPs are promising if high responsivities and short integration times are required.
A high power semiconductor laser with a novel lateral design using angular filtering by total reflection for increased brightness is demonstrated. In this so called `Z-Laser' two inner surfaces guide the laser beam by total reflection in a Z-shaped path through the laser. Higher order laser modes with larger divergence angles are suppressed because of a smaller reflectivity. This results in a reduced far-field angle. Simulations based on a 2D steady state wave equation solved by using the Pade approximation, an 1D carrier diffusion equation and a logarithmic gain model have been performed to design the device.
We report on novel low-noise QWIP focal plane arrays (FPAs) which allow us to improve the thermal resolution of infrared sensors in the long-wavelength infrared (LWIR) atmospheric window. Our concept uses detector structures with a small photoconductive gain in order to achieve simultaneously a high internal quantum efficiency and a small responsivity. In comparison to conventional QWIPs where each period consists of a quantum well and a thermionic barrier, our approach involves additionally a combination of a narrow quantum well and a tunnel barrier. Due to these additional layers, a high emission probability of the photoexcited carriers and an efficient capture into the ground subband of the subsequent period are simultaneously achieved. FPA cameras using these detectors show an extremely low noise- equivalent temperature difference (NE(Delta) T) and a high dynamic range. In particular, NE(Delta) Ts of only 7.2 mK and 5.2 mK (at 20 ms and 40 ms integration time, respectively) are observed for a 256x256 FPA camera system which we have realized using low-noise QWIPs. This value is the best temperature resolution ever obtained for thermal imagers operating in the LWIR.
Full video format focal plane array (FPA) modules with up to 640 X 512 pixels have been developed for high resolution imaging applications in either mercury cadmium telluride (MCT) mid wave (MWIR) infrared (IR) or platinum silicide (PtSi) and quantum well infrared photodetector (QWIP) technology as low cost alternatives to MCT for high performance IR imaging in the MWIR or long wave spectral band (LWIR). For the QWIP's, a new photovoltaic technology was introduced for improved NETD performance and higher dynamic range. MCT units provide fast frame rates > 100 Hz together with state of the art thermal resolution NETD < 20 mK for short snapshot integration times of typically 2 ms. PtSi and QWIP modules are usually operated in a rolling frame integration mode with frame rates of 30 - 60 Hz and provide thermal resolutions of NETD < 80 mK for PtSi and NETD < 20 mK for QWIP, respectively. Due to the lower quantum efficiency compared to MCT, however, the integration time is typically chosen to be as long 10 - 20 ms. The heat load of the integrated detector cooler assemblies (IDCAs) could be reduced to an amount as low, that a 1 W split liner cooler provides sufficient cooling power to operate the modules -- including the QWIP with 60 K operation temperature -- at ambient temperatures up to 65 degrees Celsius. Miniaturized command/control electronics (CCE) available for all modules provide a standardized digital interface, with 14 bit analogue to digital conversion for state to the art correctability, access to highly dynamic scenes without any loss of information and simplified exchangeability of the units. New modular image processing hardware platforms and software for image visualization and nonuniformity correction including scene based self learning algorithms had to be developed to accomplish for the high data rates of up to 18 M pixels/s with 14-bit deep data, allowing to take into account nonlinear effects to access the full NETD by accurate reduction of residual fixed pattern noise. The main features of these modules are summarized together with measured performance data for long range detection systems with moderately fast to slow F-numbers like F/2.0 - F/3.5. An outlook shows most recent activities at AIM, heading for multicolor and faster frame rate detector modules based on MCT devices.
KEYWORDS: Quantum well infrared photodetectors, Thermography, Staring arrays, Image processing, Mid-IR, Sensors, Digital signal processing, Analog electronics, Nonuniformity corrections, Cameras
AIM has developed a family of 2D IR detection modules providing high-speed with frame rates > 1 kHz together with state of the art thermal resolution with an NETD as low as NETD < 7 mK based on either mercury cadmium telluride, platinum silicide, or quantum well infrared photodetector technology to fit for various applications and budgets in research and development.
KEYWORDS: Semiconductor lasers, High power lasers, Resistance, Sensors, Lab on a chip, Electro optics, Temperature metrology, Continuous wave operation, Copper
High-power 980 nm-diode laser bars have been fabricated in the AlGaAs/GaInAs material system. The bars are 1 cm wide and comprise 25 broad area lasers with 200 micrometer aperture and 2 mm resonator length. Hence, the fill factor is 50%. To reduce the power density at the facet, we used an LOC structure with low modal gain, which also helps to prevent filamentation. The measured threshold current was 14 A and a record output power of 267 W cw was achieved at 333 A with an electro-optical conversion efficiency of 40%. With less thermal load, at 150 W output power the conversion efficiency was as high as 50% and the corresponding slope efficiency was 0.9 W/A. Microchannel copper heat sinks with a thermal resistance of less than 0.29 K/W were used for mounting the bars. The coolant temperature was set for all measurements to 22 degrees Celsius and the flux was 0.9 l/min. Additionally, the top electrode of the p-side down mounted bars was cooled by a second heat sink, which was pressed gently on the top electrode.
The structural properties of InAs/Ga1-xInxSb infrared (IR) superlattice layers grown by MBE on GaSb substrates have been investigated using high-resolution X- ray diffraction, atomic force microscopy (AFM), secondary ion mass spectroscopy and photoluminescence (PL) spectroscopy. Excellent layers could be grown with a residual mismatch below 1 X 10-3 showing interference oscillations in the X-ray diffraction pattern and high PL efficiency. IR-photodiodes processed from such layers show high responsivity and low leakage currents. The influence of n- and p-doping on the PL efficiency of IR superlattices has been investigated, showing a stronger decrease of the PL intensity for n-doping than for p-doping. Growing the IR-SLs with an As/In V/III ratio below 5, defects with a size of about 1 to 5 micrometers in diameter are observed in the AFM scans. The surface morphology between the defects remains perfect. The defects do not significantly affect the X-ray diffraction patterns and the PL intensity. In a minority-carrier-device, such as IR- photodiodes, the defects are associated with defect-assisted tunneling currents leading to a strong degradation of the electrical performance. By optimizing the growth conditions the defect density can be significantly reduced resulting in a surface roughness given by the standard deviation of the measured height profile of the AFM measurement below 0.3 nm leading to excellent device performance.
Quantum well infrared photodetectors (QWIPs) are very promising for ultrafast photodetection in the 8 - 12 micrometers infrared regime. We report on time-resolved studies of the intersubband photocurrent in GaAs/AlGaAs (QWIPs). The photocurrent is excited by sub-picosecond infrared pulses, which are obtained by difference frequency mixing of the signal and idler waves of an optical parametric oscillator. Using a particular detector geometry with < 900 micrometers 2 device area, the measured electrical pulses have a full- width at half-maximum of only 16 ps and a 10% - 90% rise time of 13 ps. For practical applications, in particular for heterodyne detection, it is desirable to reduce the noise floor by using a cooled low-noise preamplifier. We have performed experiments with a low-temperature hybrid circuit consisting of a QWIP in connection with a GaAs transimpedance amplifier based on HEMT technology. This configuration yields a rise time of 19 ps at an amplifier gain of approximately 35 dB.
The family of 2D detection modules at AEG Infrarot-Module GmbH (AIM) based on platinum silicide (PtSi) GaAs/AlGaAs quantum well (QWIP) devices or mercury cadmium telluride (MCT) focal planes for applications in either the 3.5 micrometers (MWIR) or 8.10 micrometers (LWIR) range was recently extended. Two new devices have been realized in the configurations 640 X 512 in a 24 micrometers pitch for mid and long wave applications using either a MCT photovoltaic (PV) array for the MWIR or a QWIP device for the LWIR, respectively. The existing 256 X 256 MCT MWIR was redesigned in a new configuration with increased fill factor of > 80 percent for improved NETD performance. The MCT units provide fast full frame rates up to > 100 Hz for the 640 X 512 units and 200Hz for the 256 X 256 units. The modules achieve with short snapshot integration times of typically 1ms excellent thermal resolution with an average NETD < 25 mK for the 640 X 512 NETD < 9mK for the 256 X 256 modules. The QWIP units are operated in either a rolling frame or snapshot integration mode with typical frame rates of 60Hz and reach a thermal resolution NETD < 25mK for full frame integration times. The FPAs are integrated up to modules using AIM's standard dewar cooler and command/control electronics (CCE) family. The package is basically identical to the existing large FA modules like the PtSi640 X 486 or the QWIP or MCT 256 X 256 in 40 micrometers pitch and is cooled by AIMs 1W split linear cooler. The CCE of the modules provides the common exclusively digital interface, using 14 Bit analog to digital conversion to provide state of the art correctability, access to highly dynamic scenes without any loss of information and simplified interchangeability of the units.
Within the last few years, high power laser diodes with remarkable improvements concerning output power, efficiency, and reliability have been investigated in the wavelength range between 780 nm and 1064 nm. The discussion, whether laser diodes fabricated from Al-free material systems can surpass the performance of devices made from the conventional InAlGaAs-material system is still ongoing. In our contribution to this discussion we present 980 nm high-power InAlGaAs-laser diodes and laser diode bars with high conversion efficiencies grown by MBE. Broad area laser diodes with 100 micrometer aperture show an output power as high as 9.2 W cw at room temperature corresponding to a COMD level of 17 MW/cm2. Up to this output power the conversion efficiency remains above 46%. The highest efficiency of nearly 60% is reached at 2.5 W of output power. Reliability tests are ongoing and predict a lifetime of at least 20.000 h at a power level of 1.5 W cw. Laser diode bars of 1 cm width comprising 25 of these oscillators have been fabricated. Similar to single emitters these devices achieve a conversion efficiency of 58% at 62 W of cw output power. In terms of conversion efficiency and output power these results are among the best reported for both, Al-containing and Al-free laser diodes and laser diode bars. They can be attributed to the material quality, the facet coating technology, and the design of our devices. Clearly, they show the competitiveness of the material system used here.
KEYWORDS: Sensors, Staring arrays, Quantum well infrared photodetectors, Cameras, Gallium arsenide, Quantum wells, Diodes, Thermography, Long wavelength infrared, Chemical elements
The paper reviews the development of IR detectors for the 8 - 12 micrometer wavelength range based on GaAs/AlGaAs quantum well structures and InAs/(GaIn)Sb short-period superlattices (SPSLs) at the Fraunhofer-Institute IAF. Photoconductive GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are used for the fabrication of starring IR cameras for thermal imaging in the third atmospheric window. The long wavelength infrared (LWIR) camera, devleoped in cooperation with AEG Infrarot-Module (AIM), consists of a two-dimensional focal plane array (FPA) with 256 X 256 detector elements, flip- chip bonded to a read-out integrated circuit (ROIC). The technology for the fabrication of FPAs, electrical and optical properties of single detector elements in the two-dimensional arrangement and the properties of the LWIR camera system are reported. A noise equivalent temperature difference (NETD) below 10 mK has been measured at an operation temperature of T equals 65 K with an integration time of 20 ms. More than 99.8% of all pixels are working and no cluster defects are observed. InAs/(GaIn)Sb SPSLs with a broken gap type-II band alignment are well suited for the fabrication of IR detectors covering the 3 - 12 micrometer spectral range. Due to the lattice mismatch of the InAs/(GaIn)Sb SPSL with respect to GaSb, tight control of thickness and composition of the layers and a controlled formation of the chemical bonds across the interface in the SPSLs are used for strain compensation. Photodiodes with a cut-off wavelength (lambda) c equals 8 micrometer and a current responsivity R(lambda ) equals 2 A/W exhibit a dynamic impedance of R0A equals 1k(Omega) cm2 at T equals 77 K. This leads to a Johnson- noise limited detectivity in excess of D* equals 1 X 1012 cm(Hz)1/2/W for these type of detectors.
Electric and optical properties of IR photodiodes based on InAs/(GaIn)Sb superlattices were investigations. Mesa diodes were fabricated with cut-off wavelengths ranging from 7.5 to 12 micrometers , showing 77 K detectivities between 1 X 1012 cmHz0.5/W and 5 X 1010 cmHz0.5/W, respectively. At least two leakage current mechanisms are observed in the reverse bias branch of the current-voltage characteristics. At high reverse bias band-to-band tunneling currents dominate. Close to zero voltage surface leakage currents become important. The leakage currents are studied with gate controlled mesa diodes, allowing depletion or inversion of the mesa side walls. In addition, the band-to- band tunneling currents are investigated by applying magnetic fields oriented parallel and perpendicular to the electric field across the p-n junction of the diode.
In high-power, high-brightness laser diodes, beam filamentation is one of the main physical effects that limit the device performance. Due to the interaction between the optical power and the carrier density in the active region of broad area devices, spatial hole-burning leads to an inhomogeneous optical index that causes the degradation of the optical beam profile. We show, that epitaxial layer structures with low optical confinement are much more insensitive to beam filamentation because of their reduced differential gain. Experimentally we find, that the beam quality of tapered laser oscillators can be improved by an order of magnitude, when epitaxial layer structures with reduced modal gain are used for the device fabrication. Two mm long tapered devices with a 200 micrometer wide output facet show near diffraction limited farfield profiles up to output powers of more than 2 W cw.
Modulators and detectors integrated in two-dimensional arrays are key elements for parallel optical
signal processing. Self electrooptic effect devices (SEEDs) have been suggested as switching
elements for these systems. SEEDs are employed as gates, memories or optical flip-flops {1,2,3].
Various logic functions can be implemented using suitable optical feedback. The switching characteristics
can be controlled by the internal structure of the epitaxial layers of the device. In
the present study we investigate inverted bistable switching and optimized optical modulation in
SEEDs with resonant optical feedback.
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