The wavefront measurements have been performed with the EUV Wavefront Metrology System (EWMS) for the first
time using a prototype projection optic as a test optic. The wavefronts of the test optic was measured at the five positions
in the exposure field with the Digital Talbot Interferometer (DTI). The RMS magnitude of the wavefront errors ranged
from 0.71 λ (9.58 nm) to 1.67 λ (22.75 nm). The results obtained with the DTI were compared to those with the Cross
Grating Lateral Shearing Interferometer (CGLSI). As a result of a repeatability assessment, it was found that the EWMS
can stably measure the wavefronts of the test optic. Additionally, unwrapping of the phase map was found to be related
to the precision of the measurement.
Precise measurements of the wavefront aberrations of projection optics with 0.1 nm RMS accuracy are indispensable to
develop the extreme ultraviolet (EUV) lithography. In order to study measurement methods, we built the Experimental
EUV Interferometer (EEI) that has built-in Schwarzschild-type optics as test optics and was supplied with EUV
radiation of 13.5 nm in wavelength from a synchrotron radiation facility as a source light. The EEI can evaluate several
methods of EUV interferometory replacing optical parts easily. Those methods are dividable into two categories,
namely point diffraction interferometer (PDI) and lateral shearing interferometer (LSI) and those were experimentally
compared. Finally, 0.045nm RMS of reproducibility was achieved with PDI method and the residual systematic error
after removing specified errors was reduced to 0.064nm RMS excluding axial symmetrical aberrations. In addition, one
of LSI-type methods also proved to have almost enough accuracy for the assembly of the projection optics.
Comparisons between several at-wavelength metrological methods are reported. The comparisons are performed by measuring one test optic with several kinds of measurement methods from the viewpoints of accuracy, precision and practicality. According to our investigation, we found that the PDI, the LDI, and the CGLSI are the most suitable methods for evaluating optics for EUV lithography.
We present the experimental results of EUVA Absolute Point Diffraction Interferometer (ABSPDI) and Lateral Shearing Interferometer (LSI) for at-wavelength characterization of the projection lens for use in extreme-ultraviolet lithography (EUVL). The attained repeatability of either type of the interferometers is within 0.04nmRMS. The experimental results have shown good consistency between the LSI and ABSPDI. The reasons for the residual differences have been analyzed and we believed it is mainly due to the CCD tilt effect in the experimental system. After the CCD tilt effect was removed, a better consistency below 0.33nm RMS has been achieved.
A Calibration technology for double-grating lateral shearing interferometer1 (DLSI) and lateral shearing interferometer (LSI) is proposed in this paper. In this method, two measurements are used for calibration. One is the measurement by using the first- and zero-order diffraction beams of grating in the interferometer; the other one is the measurement by using the minus-first-order and zero-order diffraction beams. The phase distributions were calculated out from the two measurements. After shifted one phase distribution to superpose the other one, in the sum of the two phase distributions, the test wavefront is canceled. The system error caused by the grating diffraction and grating tilt can be calculated out from the sum of the superposed phase distributions. For calculating out the system errors, the sum of the two phase distributions is fitted to Zernike-Polynomials. From the coefficients of the Zernike-polynomials, the system error is calculated. This method is carried out to calibrate the system error of DLSI. We performed an experiment to verify the available of our calibration method.
We are developing an at-wavelength interferometer for EUV lithography systems. The goal is the measurement of the wavefront aberration for a six-aspherical mirror projection optic. Among the six methods that EEI can measure, we selected CGLSI and PDI for comparison. PDI is a method well-known for its high accuracy, while CGLSI is a simple measurement method. Our comparison of PDI and CGLSI methods, verified the precision of the CGLSI method. The results show a difference between the methods of 0.33nm RMS for terms Z5-36. CGLSI measurement wavefronts agree well with PDI for terms Z5-36, and it is thought of as a promising method. Using FFT analysis, we estimated and then removed the impact of flare on the wavefront. As a result of having removed the influence of flare, the difference between CGLSI and PDI improved to only 0.26nm RMS in Zernike 5-36 terms. We executed PDI wavefront retrieval with FFT, which has not been used till now. By confirming that the difference between methods using FFT and Phase shift is 0.035nm RMS for terms Z5-36, we have proven that PDI wavefront analysis with FFT is possible.
The recent experimental results of EUV wavefront metrology in EUVA are reported. EUV Experimental Interferometer (EEI) was built at the NewSUBARU synchrotron facility of University of Hyogo to develop the most suitable wavefront measuring method for EUV projection optics. The result is to be reflected on EWMS (EUV Wavefront Metrology System) that measures wavefront aberrations of a six-aspherical mirror projection optics of NA0.25, of a mass-production EUV lithography tool. The experimental results of Point Diffraction Interferometer (PDI) and Lateral Shearing Interferometer (LSI) are shown and the error factors and the sensitivity of astigmatism measurements of these methods are discussed. Furthermore, for reducing these kinds of errors, another type of shearing interferometer called DTI (Digital Talbot interferometer) is newly introduced.
Point diffraction interferometry (PDI) is a promising candidate of the wavefront metrology for EUV lithographic projection optics. However, the pinhole used in the PDI is easily filled up with carbon contamination induced by EUV irradiation. We have evaluated the filling rate of pinholes by measuring decreasing rates of intensity of EUV radiation that passed through the pinholes. As a result, we found the filling rates of the pinholes depend on their materials and blowing of the oxygen. The filling rate was the slowest when the pinhole made of Ni was used and oxygen was blown.
We present the theoretical measurement accuracy analysis for at wavelength characterization of the projection lens to
be used in extreme-ultraviolet lithography (EUVL) and the first experimental result from the lateral shearing
interferometer (LSI) test system. LSI is one of the potential candidates for high Numerical Aperture (NA) optics testing
at the EUV region during alignment of the projection optics. To address the problem of multiple-beam interference, we
propose a general approach for derivation of a phase-shift algorithm that is able to eliminate the undesired 0th order
effect. The main error source effects including shear ratio estimation, hyperbolic calibration, charge coupled device
(CCD) size effect, and CCD tilt effect are characterized in detail. The total measurement accuracy of the LSI is
estimated to be within 7mλ rms (0.1 nm rms at 13.5 nm wavelength).
An Experimental extreme ultraviolet (EUV) interferometer (EEI) using an undulator as a light source was installed in New SUBARU synchrotron facility at Himeji Institute of Technology (HIT). The EEI can evaluate the five metrology methods reported before. (1) A purpose of the EEI is to determine the most suitable method for measuring the projection optics of EUV lithography systems for mass production tools.
An experimental extreme UV (EUV) interferometer (EEI) using an undulator light source was designed and constructed for the purpose of developing wavefront measurement technology with the exposure wavelength of the projection optics of EUV lithography systems. EEI has the capability of performing five different EUV wavefront metrology methods.
IDEALSmile is introduced as a new exposure technique that realizes k1 equals 0.29. In this paper IDEALSmile is targeted for contact hole patterns (C/H). The results validate that it is possible to simultaneously expose not only k1 equals 0.32 half-pitch dense and isolated C/H patterns, but also different pitches using Canon FPA- 5000ES3, which is impossible by conventional methods. Since these results are obtained using a binary mask and modified illumination with single exposure, there are no concerns with regards to a decease in throughput and an increase in cost of ownership. However, one of the issues in fabricating C/H patterns is the mask error enhancement factor (MEEF). Our simulation ha shown that IDEALSmile exhibits good MEEF. Although there are questions regarding optical microlithography for critical C/H patterning, the IDEALSmile exposure method has the potential to be the solution. By attaining k1 equals 0.32, printing 100nm C/H patterns can be achieved with a single exposure using KrF lithography, such as the Canon FPA-5000ES4. Furthermore the IDEALSmile technique using ArF or F2 lithography will be effective for C/H patterns below the 100nm node. There is no doubt that optical microlithography will continue for some time.
In the F2 laser lithography, it is essential to reduce the loss of the optical coatings deposited on calcium fluoride lenses. In order to make low loss optical coatings, we have developed measurement apparatus, evaluated the coatings with various analyses, and found a correlation with the optical constants. In this paper we describe the optical loss measurement apparatus and the evaluation results analyzed for either single layer coatings or multi-layer anti-reflection coatings.
IDEALSmile is introduced as a new exposure technique. Since we have realized k1 equals 0.29, k1 equals 0.32 optical lithography is now achievable. In this paper IDEALSmile is targeted for contact hole patterns. The results validate that it is possible to simultaneously fabricate 110 nm (k1 0.32) half-pitch dense and isolated contact hole patterns using Canon FPA-5000ES3 (KrF, NA equals 0.73). Furthermore, our experimental results also show that it is possible to fabricate different half-pitch patterns at the same exposure dose, which is impossible by conventional methods. Since these results are obtained using binary mask and the modified illumination with single exposure, there are no concerns with regards to decrease in throughput and increase in cost of ownership. By attaining k1 equals 0.32 for contact hole patterns using binary mask with single exposure, printing 100 nm contact hole patterns can be achieved with single exposure using KrF lithography, such as the Canon FPA-5000ES4 (KrF, NA equals 0.80) scanner which will soon make its market debut. ArF or F2 lithography is effective as for contact hole patterns below the 100 nm node. There is no doubt that optical microlithography will continue for some time.
An absorptance measurement system has been developed for evaluation of the absorption loss of optical coatings at the wavelength of F2 laser(157nm). Calorimetry was adopted as measurement method because of its high reliability. In the system, the calorific values generated by irradiation has estimated by comparison with those generated by an electric heater in order to obtain the high accuracy of measurement. The repeatability of measurement has been attained so far to be +/- 0.02%. We have found out with the system that the absorptance is increased by measurement in the vacuum compared with in nitrogen and decreased by irradiation of F2 laser light due to its contamination cleaning effect. We have measured the absorptance of samples with anti-reflection coatings that several suppliers fabricated by their own methods.
IDEAL has been proposed as a new double exposure technique to realize k1 equals 0.3 optical lithography. We have applied this technique to complicated 2D structures that can be found in a poly-level of a memory test pattern device. Experimental results showed that IDEAL has a quite large process window also on structured substrate such as SiN and poly-silicon. For the CD target of 0.13 micrometers , exposure latitude larger than 10 percent with a depth of focus larger than 0.5 micrometers was achieved by IDEAL exposure. The alignment latitude of the two reticles used to compose the final lithographic image was larger than +/- 40 nm, moreover line-end shortening effects are also improved by IDEAL exposure.
IDEAL (Innovative Double Exposure by Advanced Lithography) has been introduced as a new double exposure technique to realize k1 equals 0.3 optical lithography. IDEAL uses a rough pattern mask with patterns close to the actual device design and a simple fine pattern PSM to resolve very high contrast images on a wafer. IDEAL can be applied to complicated two dimensional patterns for actual device such as double, rectangular or T-shaped gate patterns. Results of IDEAL on different pattern types are shown. IDEAL significantly reduces MEF (Mask Error enhancement Factor). At various rough and fine dose ratios, IDEAL demonstrates the advantage especially at fine linewidths below 150 nm where the MEF of single conventional exposures increase sharply. Our extensive calculation of MEF with various patterns and experiments on complicated two dimensional patterns further confirm that IDEAL is a practical method in advanced device manufacturing.
A new exposure technology called IDEAL (Innovative Double Exposure by Advanced Lithography) which realizes k1 equals 0.3 optical lithography is introduced. In IDEAL exposure method, rough pattern mask and fine pattern mask are used. The rough pattern mask contributes to expand the degree of freedom in two-dimensional patterning and the fine pattern mask contributes to higher resolution and focus DOF enhancement. As an actual example, 120 nm gate array is formed using KrF 0.63 NA stepper. It has been confirmed that the double exposure method is effective in the pattern formation of irregularly arranged contact hole arrays of 150 nm. Furthermore, it is also shown that double exposure method is effective in the reduction of mask error enhancement factors (MEF).
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.