Eu-doped GaN is a promising material with a wide array of potential applications in optoelectronics, optogenetics, micro displays and quantum computing. While this system has been the subject of intense investigation for the last two decades, several questions still remain about certain aspects of its optical properties, such as the polarization dependence of the optical transitions, and the coupling between the 4f-electron configuration and bulk phonons, as well and the appearance of local phonon modes. Moreover, the origin of certain emission peaks remains under debate in the literature. In this proceeding, the results of a systematic series of “site-selective” photoluminescence measurements are presented, where the properties of pulsed and continuous-wave laser excitation, such as polarization and intensity, were controlled.
Platinum silicide thin films were prepared using DC magnetron sputtering at room temperature, 275°C and 350°C in order to study the phase transformation from amorphous to crystalline PtSi as well as the changes in film resistance in correlation to Pt composition and film structure. Platinum composition was controlled by placing Pt pellets on the Si sputtering target, film composition was determined via energy dispersive X-ray spectroscopy (EDAX), and structure was determined using powder X-ray diffraction (XRD). Crystalline platinum silicide (PtSi) films form when platinum accounts for more than 40% of the atomic composition in the films. There is a shift in the preferred orientation of the PtSi crystal structure in the plane of the film surface with increased Pt concentration and deposition temperature which corresponds to a sharp decrease in the resistance of the films.
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