In this paper, the research and analysis of mesa-type InGaAs FPA detectors with various pixel structures were reported. Three different pixel mesa structures in FPA were designed, including conventional mesa structure, double-mesa and surface pn junction mesa. The numerical simulation of above three pixel mesa structure devices and the conventional pixel planar structure device was carried out, and the optimal pixel structure was determined by comparing the electrical crosstalk and dark current. The results showed that the surface pn junction mesa structure can reduce the surface leakage current of the device by effectively suppressing the electric field of the device mesa etched surface, which was beneficial for reducing the difficulty of passivation protection process. InGaAs FPA detectors with surface pn junction mesa structure can simultaneously have relatively low electrical crosstalk and low dark current characteristics.
The simulations of quasi one-dimensional (1D) and quasi three-dimensional (3D) device process and optoelectronic performance were conducted on silicon APD array pixels using Silvaco, realizing micro region analysis of the electric field distribution, avalanche gain, and photoelectric response characteristics of the APD photosensitive region. The multiplication coefficients corresponding to different positions of APD pixel were obtained and compared with the ideal 1D device structure. The results show that the multiplication factor of the center region of APD pixel is significantly higher than that of the edge of the photosensitive region. The simulation of microlens to converge the incident light to the center of the photosensitive region confirmed the increasement of APD avalanche multiplication current, i.e. the quasi 3D structural APD response is increased from 13.6 A/W to 54.8 A/W, and the effective fill factor is increased from 20.9% to 84.2%. Thus, the utilization rate of incident light is effectively improved.
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