The optical wave would change its propagation path, as it encounters different dielectric media. The characteristic of the optical reflection would vary with different dielectric medium(n2), while the optical beam is incident from air (n1) into the medium (n2). Generally, an acoustic wave would cause strain effect as it broadcasts in the medium (n2) and leads to a change of refractive index Δn2. The net refractive index of medium n2 should be n2+Δn2. A plane sound wave would be adopted to be the acoustic source. As the result, the refractive index of medium n2 should vary with the plane sound wave. We could evaluate the exist of acoustic wave underwater by accumulating the reflective optical signal. In this work, the typical ocean is taken to be the propagation medium(n2) of plane sound wave. The simulation is to derive the data of optical reflection affected by different powers of plane sound wave. The result could be a considerable technology for optic-acoustic application.
The ZnS0.06Se0.94 epilayer is obtained by metallorganic chemical vapor deposition (MOCVD) with Se on-off modulation. The activation energy of as grown ZnSxSe1- x layer is lower than that by conventional growth method. From the 77 K photoluminescence spectra, high quality of as grown layer is obtained as the composition of ZnSxSe1- x reaches x equals 0.06 with which the lattice of ZnS0.06Se0.94 matches that of GaAs substrate. The 77K near band edge emission peak of as grown ZnS0.06Se0.94 is observed at 441.5 nm and the full width at half maximum of 12.7 meV is obtained.
ZnSe is an important semiconductor material with a large bandgap (2.68 eV), which has the potential to be used for photoluminescent and eletroluminescent devices and for window layer of solar cells. In this work, a low-cost and large-area growth method for ZnSe layer on Si substrate was studied by liquid phase deposition (LPD). The micrograph of the surface shows specula but a roughness surface texture is obtained. The island texture could be improved by raising growth temperatures. The crystallinity could be improved by the growth temperature considerations. High resistivity and specular layers were obtained as grown at room temperature. The abrupt interface resulted from less interdiffusion between ZnSe layers and substrates was reasonable under the growth condition at room temperatures.
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