Photonic power converters designed to operate in the telecommunications O-band were measured under non-uniform 1319 nm laser illumination. Two device architectures were studied, based on lattice-matched InGaAsP on an InP substrate and lattice-mismatched InGaAs grown on GaAs using a metamorphic buffer. The maximum measured efficiencies were 52.9% and 48.8% for the lattice-matched and -mismatched designs respectively. Both 5.4-mm2 devices were insensitive to the incident laser spot size for input powers of < 250 mW and exhibited better performance for larger spot sizes with more uniform illumination profiles at higher powers.
Photonic power converters (PPCs) are one of the main components of optical power transmission systems, generating electrical power via the photovoltaic effect. We simulate ultrathin PPCs designed for operating at the telecommunication wavelength of 1310 nm with 9 and 12 times thinner absorbing layers using cubic and pyramidal nanostructured back reflectors (BRs), respectively. While increasing efficiency by 13% (rel.) over conventional PPCs, results also show superior light trapping for pyramidal BR with twice the absorption of a simple double pass absorber layer of the same thickness and higher short-circuit current for pillar BR reaching 94% of an ideal Lambertian surface.
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