We demonstrate high-gain InAs QDs targeting C-band and L-band using a five QD-layer structure grown via MOCVD, with a photoluminescence broadening of ~55 meV. Lasers were fabricated with cavity lengths from 2000-µm down to 333-µm, with cleaved un-coated facets. Threshold current density increases monotonically with temperature over a range of 300 K to 380 K for all cavity lengths with a factor of 3.0 and 3.4 increase for the longest and shortest cavities, respectively. Measurements of lasing spectrum reveal that even the shortest cavity maintains a stable increase in wavelength up to 390 K with no observable transition to the excited state.
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