We report the first two-color 320 x 256 infrared Focal Plane Array (FPA), based on a voltage-tunable InAs/InGaAs/GaAs DWELL structure. The detectors, grown by solid source molecular beam epitaxy (MBE) comprise of a 15-stack asymmetric DWELL structure sandwiched between two highly doped n-GaAs contact layers, grown on a semi-insulating GaAs substrate. The DWELL region consists of a 2.2 monolayer deposition of n-doped InAs quantum dots (QDs) in an In0.15GaAs0.85As well, itself placed in GaAs. The well widths below and above the dots are 50Å and 60Å, respectively. The absorption region asymmetry results in a bias dependent spectral response, with the peak wavelength varying from 5.5 to 10 μm. Using calibrated black body measurements, mid-wavelength and long wavelength specific detectivities (D*) of top-illuminated test pixels at 78K were estimated to be 7.1 x 1010 cmHz1/2/W (Vb= 1.0V) and 2.8 x 1010 cmHz1/2/W (Vb= 2.5V), respectively. Subsequently, a 320 x 256 QDIP FPA array was fabricated on a 30 μm pitch and was hybridized with an Indigo 9705 ROIC. Thermal imaging was successfully carried out at an estimated FPA temperature of 80K, using different optical filters between 3-5 μm, and 8-12 μm, so as to demonstrate two-color operation. The operability of the FPA was greater than 99%, and the noise-equivalent temperature difference was estimated to be less than 100 mK for f#1 (3-5 μm) and f#2 (5-9 μm) optics.
Quantum-dot infrared photodetectors (QDIPs), based on intersubband transitions in nanoscale self-assembled dots, are perceived as a promising technology for mid-infrared-regime sensing since they are based on a mature GaAs technology, are sensitive to normal incidence radiation, exhibit large quantum confined stark effect that can be exploited for hyperspectral imaging, and have lower dark currents than their quantum well counterparts. High detectivity (D* = 1.0E11 cmHz1/2/W at 9 microns) QDIPs have been recently shown to exhibit broad spectral responses approximately 2-micron FWHM) with a bias-dependent shift in their peak wavelengths. This controllable, bias dependent spectral diversity, in conjunction with signal-processing strategies, allows us to extend the operation of the QDIP sensors to a new modality that enables us to achieve: (1) spectral tunability (single- or multi-color) in the range 2-12 microns in the presence of the QDIP's dark current; and (2) multispectral matched filtering in the same range. The spectral tuning is achieved by forming an optimal weighted sum of multiple photocurrent measurements, taken of the object to be probed, one for each bias in a set of prescribed operational biases. For each desired spectral response, the number and values of the prescribed biases and their associated weights are tailored so that the superposition response is as close as possible, in the mean-square-error sense, to the response of a sensor that is optically tuned to the desired spectrum. The spectral matching is achieved similarly but with a different criterion for selecting the weights and biases. They are selected, in conjunction with orthogonal-subspace-projection principles in hyperspectral classification, to nullify the interfering spectral signatures and maximize the signal-to noise ratio of the output. This, in turn, optimizes the classification of the objects according to their spectral signatures. Experimental results will be presented to demonstrate the QDIP sensor's capabilities in these new modalities. The effect of dark current noise on the spectral-tuning capability is particularly investigated. Examples of narrowband and wideband multispectral photocurrent synthesis as well as matched filtering are presented.
Spectrally tunable quantum-dot infrared photodetectors (QDIPs) can be used to approximate multiple spectral responses with the same focal-plane array. Hence, they exhibit the potential for real time adaptive detection/classification. In the present study, it is shown that we can perform the detection/classification operation at the adaptive focal-plane array (AFPA) based on QDIPs by fitting the QDIP's response to the correspondent operators. With a new understanding of spectral signature in the sensor space, the best fitting can be achieved. Our simulation results show how well QDIPs perform in different regions of the spectrum in the mid- and long wave infrared. The results indicate that the AFPA performance does not match that of the ideal filtering operators, but reliable measurement can be accomplished.
Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10°C and 0.1mW at 70°C and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125°C for thousands of hours.
The realization of single-mode Distributed Feedback (DFB) and Distributed Bragg Reflector (DBR) lasers, based on surface grating structures is of considerable interest. Such devices offer a relatively simple grating fabrication process without complicated multistep-epitaxial growth or regrowth, as required in more conventional devices. This simplified processing could potentially reduce the fabrication cost for these lasers. A key concern for the surface grating lasers is designing the structure to provide sufficient feedback to achieve single mode operation with high yield and high quality as compared to conventional buried-grating DFB and DBR lasers. This paper reports numerical modelling of surface grating DFB and DBR lasers based on 1.55 micrometers wavelength InGaAs/InGaAsP/InP with graded-index separate confinement heterostructure multiple quantum well (GRINSCH-MQW) structures. Bragg wavelength operation of the DFB and DBR lasers may be satisfied by deeply etching fine surface gratings on both side portions and along top of the ridge stripe respectively. Sufficiently strong optical coupling between the corrugated structure and evanescent field can be achieved by controlling various parameters such as ridge width, etch depth, and grating width. The numerical results obtained allow optimum grating geometries to be developed to provide the desired feedback effect. Furthermore, the model has been used to investigate the influence on the device performance of fabrication errors and processing effects on the grating structures, prior to fabrication.
The electromechanical side-instability and the stable travel range of comb-drive actuators are investigated. The stable travel range depends on the finger gap spacing, the initial finger overlap, and the spring stiffness ratio of the compliant suspension. Proper design of the suspension structure is the most effective way to stabilize the actuator and therefore to achieve a large deflection. In this paper, an improved suspension design, so called tilted folded-beam suspension, is proposed. The expressions for the spring constants of the proposed suspension both in and perpendicular to the stroke direction are given. Using such suspension, the stability of the comb-drive actuator is improved and the stable travel range is enhanced. Comb drive actuators with various tilted folded-beam suspensions were fabricated using the standard surface micromachining technology and their operational performances were characterized. The experimental results are in good agreement with the theoretical predictions.
The concept of nondiffracting beams was first introduced by Durnin. The beam spot of nondiffracting beam undergoes diffraction-free spreading over a long propagating distance. Therefore, nondiffracting beams could have potential applications in precision alignment, optical interconnections, and power transport. In this paper, hybrid genetic algorithms that combine genetic algorithms (GAs) with traditional gradient-based local search techniques are proposed for the optimization design of diffractive optical elements (DOE's) for the generation of nondiffracting beams. In the hybrid genetic algorithms, an offspring obtained by genetic operators, such as crossover and mutation, is not included in the next generation directly but used as a seed for the sequent local search. The local search method searches the neighborhood of each offspring, and selects a better point, which is included in the next generation. In such a manner, the efficient exploitation of local information is provided by the incorporated local search procedure and the reliable locating of the global minimum is provided by the use of mechanisms of nature selection. The proposed hybrid methods exploit the global nature of the GAs as well as the local improvement capabilities of the gradient-based local search techniques, and will perform a more improved search while comparing with both of the single ones. The incorporated local search technique we used here is the Davidon-Fletcher-Powell (DFP) method, which is well known for its good convergence property. Numerical results demonstrate that the designed DOE's can successfully produce both zero-order and high-order nondiffracting beams.
We demonstrated the integration of 32 by 32 p-i-n photodiode arrays with Si-dummy chips for potential use in massively parallel short-distance optical interconnects. Individual devices in 32 by 32 InGaAs/InP photodetector arrays were successfully tested and demonstrated a small signal modulation speed above 10 GHz under dark condition, corresponding to an aggregate data transmission capacity in excess of Tera-bit/s.
We demonstrate the integration of vertical-cavity surface- emitting laser (VCSEL) arrays with Si-dummy chips for potential use in short-distance parallel optical interconnects. An 8 X 8 flip-chip bonded InGaAs VCSEL array was successfully modulated at data rates up to 0.8 Gbit/s/channel, corresponding to an aggregate data transmission capacity in excess of 50 Gbit/s. A 2 X 4 VCSEL array was indirectly flit-chip bonded to a Si substrate via a transparent glass carrier and package- limited data rates of 0.4 Gbit/s/channel were achieved. The large signal modulation bandwidth of these devices exceeded 2 Gbit/s. The electrical driving characteristics of the devices were found to be compatible with 3.3 V CMOS technology.
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