We present an aspheric collimating lens for mid-infrared (4-14 μm) quantum cascade lasers. The lenses were
etched into silicon by an inductively coupled plasma reactive ion etching system on wafer level. The high
refractive index of silicon reduces the height of the lens profile resulting in a simple element working at high
numerical aperture (up to 0.82). Wafer level processes enable the fabrication of about 5000 lenses in parallel.
Such cost-effective collimating lens is a step towards the adoption of quantum cascade lasers for all its potential
applications.
Superprism-based deflection of an optical beam is observed in a photonic crystal composed of a triangular lattice of pillars infiltrated with a liquid crystal. The device is based on a Silicon-on-insulator substrate and operates in the telecommunications band. The experimental results show a wavelength shift of 0.76 μm/nm, in reasonable agreement with simulations. Temperature-based control of the liquid crystal properties is also shown to modulate the superprism characteristics.
We have developed a process for the direct fabrication of two-dimensional photonic crystals (PC) on large area surfaces that allows creation of defects and defect lines in the PC. The technique is based on lithography and laser beam interference in standard photoresist (PR). In a first step, multiple exposures of interference fringes define a two-dimensional lattice of pillars. Then the light of a Hg lamp is focalized with a microscope to create defect lines using a piezoelectric table. After development, the structures are transferred into silicon layer, deposed onto a glass wafer substrate by plasma etching. The result is a photonic structure of Si pillars where the light is confined in the plane by the PC and out of the plane by wave-guiding.
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