Dr. Qiliang Yan Profile

Dr. Qiliang Yan

at Synopsys Inc

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Author

Publications (17)

Proceedings Article | 23 March 2020 Paper

Compact modeling to predict and correct stochastic hotspots in EUVL

Zachary Levinson, Yudhishthir Kandel, Yunqiang Zhang, Qiliang Yan, Makoto Miyagi, Xiaohai Li, Kevin Lucas

Proceedings Volume 11323, 1132324 (2020) https://doi.org/10.1117/12.2554099

KEYWORDS: Stochastic processes, Optical proximity correction, Extreme ultraviolet lithography, Data modeling, Critical dimension metrology, Calibration, Monte Carlo methods, Lithography, Failure analysis, Image processing

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Proceedings Article | 19 March 2018 Paper

Extreme ultraviolet mask multilayer material variation impact on horizontal to vertical pattern bias

Lawrence Melvin, Yudhishthir Kandel, Qiliang Yan, Artak Isoyan, Weimin Gao

Proceedings Volume 10583, 105831S (2018) https://doi.org/10.1117/12.2296864

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet, Silicon, Molybdenum, Semiconducting wafers, Reflectors, Critical dimension metrology, Optical proximity correction, Reticles

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Proceedings Article | 24 March 2017 Paper

Correlation of experimentally measured atomic scale properties of EUV photoresist to modeling performance: an exploration

Yudhishthir Kandel, Jonathan Chandonait, Lawrence Melvin, Sajan Marokkey, Qiliang Yan, Steven Grzeskowiak, Benjamin Painter, Gregory Denbeaux

Proceedings Volume 10143, 101430B (2017) https://doi.org/10.1117/12.2258063

KEYWORDS: Extreme ultraviolet lithography, Data modeling, Photoresist materials, Lithography, Optical proximity correction, Optical lithography, High volume manufacturing, Photons, Extreme ultraviolet, Semiconducting wafers, Electron beams, Scattering

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Proceedings Article | 26 March 2015 Paper

A pattern- and optics-independent compact model of Mask3D under off-axis illumination with significant efficiency and accuracy improvements

Hongbo Zhang, Qiliang Yan, David Wei, Ebo Croffie

Proceedings Volume 9426, 94260Q (2015) https://doi.org/10.1117/12.2086046

KEYWORDS: Photomasks, Calibration, Optical proximity correction, 3D modeling, Process modeling, Lithography, Performance modeling, Lithographic illumination, Optical testing, Source mask optimization

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Proceedings Article | 9 September 2013 Paper

Efficient full-chip mask 3D model for off-axis illumination

Hongbo Zhang, Qiliang Yan, Lin Zhang, Ebo Croffie, Peter Brooker, Qian Ren, Yongfa Fan

Proceedings Volume 8880, 888023 (2013) https://doi.org/10.1117/12.2026650

KEYWORDS: Calibration, Photomasks, 3D modeling, Lithography, Cadmium, Semiconducting wafers, Lithographic illumination, Process modeling, Error analysis, Light

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Proceedings Article | 9 September 2013 Paper

An accurate ILT-enabling full-chip mask 3D model for all-angle patterns

Hongbo Zhang, Qiliang Yan, Ebo Croffie, Lin Zhang, Yongfa Fan

Proceedings Volume 8880, 88800G (2013) https://doi.org/10.1117/12.2026468

KEYWORDS: Photomasks, 3D modeling, Data modeling, Optical proximity correction, Calibration, Polarization, Lithography, Performance modeling, Statistical modeling, 3D image processing

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Proceedings Article | 13 March 2012 Paper

Binary modeling method to check the sub-resolution assist features (SRAFs) printability

Jianliang Li, Weimin Gao, Yongfa Fan, Jing Xue, Qiliang Yan, Kevin Lucas, Peter De Bisschop, Lawrence Melvin

Proceedings Volume 8326, 83261D (2012) https://doi.org/10.1117/12.916466

KEYWORDS: SRAF, Semiconducting wafers, Binary data, Printing, Optical proximity correction, Calibration, Photomasks, Scanning electron microscopy, Cadmium, Optical lithography

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Proceedings Article | 19 March 2008 Paper

Continuous process window modeling for process variation aware OPC and lithography verification

Qiaolin Zhang, Qiliang Yan, Yunqiang Zhang, Kevin Lucas

Proceedings Volume 6925, 69251A (2008) https://doi.org/10.1117/12.772737

KEYWORDS: Calibration, Process modeling, Optical proximity correction, Data modeling, Finite element methods, Lithography, Semiconducting wafers, Critical dimension metrology, Optical lithography, Statistical modeling

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As the semiconductor industry moves to the 45nm node and beyond, the tolerable lithography process window significantly shrinks due to the combined use of high NA and low k₁ factor. This is exacerbated by the fact that the usable depth of focus at 45nm node for critical layer is 200nm or less. Traditional Optical Proximity Correction (OPC) only computes the optimal pattern layout to optimize its patterning at nominal process condition (nominal defocus and nominal exposure dose) according to an OPC model calibrated at this nominal condition, and this may put the post-OPC layout at nonnegligible patterning risk due to the inevitable process variation (defocus and dose variations). With a little sacrifice at the nominal condition, process variation aware OPC can greatly enhance the robustness of post-OPC layout patterning in the presence of defocus and dose variation. There is also an increasing demand for through process window lithography verification for post-OPC circuit layout. The corner stone for successful process variation aware OPC and lithography verification is an accurately calibrated continuous process window model which is a continuous function of defocus and dose. This calibrated model needs to be able to interpolate and extrapolate in the usable process window. Based on Synopsys' OPC modeling software package ProGen, we developed and implemented a novel methodology for continuous process window (PW) model, which has two continuous adjustable process parameters: defocus and dose. The calibration of this continuous PW model was performed in a single calibration process using silicon measurement at nominal condition and off-focus-off-dose conditions which are sparsely sampled within the measured entire focus exposure matrix (FEM). The silicon data at the off-focus-off-dose conditions not used for model calibration was utilized to validate the accuracy and stability of PW model during model interpolation and extrapolation. We demonstrated this novel continuous PW modeling approach can achieve very good performance both at nominal condition and at interpolated or extrapolated off-focus-off-dose conditions.

Proceedings Article | 12 March 2008 Paper

Resist bias measured in Iso-focal structure

Jianliang Li, Chunqing Wang, Aram Kazarian, Qiliang Yan, Lawrence Melvin

Proceedings Volume 6924, 692449 (2008) https://doi.org/10.1117/12.772912

KEYWORDS: Optical proximity correction, Cadmium, Critical dimension metrology, Wafer-level optics, Process modeling, Image processing, Optical lithography, Computer simulations, Optical simulations, Semiconducting wafers

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Proceedings Article | 30 October 2007 Paper

Fast synthesis of topographic mask effects based on rigorous solutions

Qiliang Yan, Zhijie Deng, James Shiely

Proceedings Volume 6730, 67302N (2007) https://doi.org/10.1117/12.747444

KEYWORDS: Photomasks, 3D modeling, Polarization, Optical proximity correction, Maxwell's equations, Finite-difference time-domain method, Lithography, Process modeling, Modulation, Resolution enhancement technologies

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Proceedings Article | 3 May 2007 Paper

Improvement of model kernel representation in process simulation by taking pattern correlation into account

Jianliang Li, Qiliang Yan, Lawrence Melvin

Proceedings Volume 6533, 65330N (2007) https://doi.org/10.1117/12.737117

KEYWORDS: Optical proximity correction, Optical lithography, Resolution enhancement technologies, Computer simulations, Mathematical modeling, Photomasks, Calibration, Binary data, Image analysis, Lithium

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Proceedings Article | 27 March 2007 Paper

Rapid search of the optimum placement of assist feature to improve the aerial image gradient in iso-line structure

Jianliang Li, Qiliang Yan, Lawrence Melvin

Proceedings Volume 6520, 65204A (2007) https://doi.org/10.1117/12.712167

KEYWORDS: SRAF, Atrial fibrillation, Image quality, Optical lithography, Photomasks, Performance modeling, Nanoimprint lithography, Image processing, Binary data, Lithium

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Proceedings Article | 21 March 2007 Paper

Assist features for modeling three-dimensional mask effects in optical proximity correction

Qiliang Yan, Zhijie Deng, James Shiely, Lawrence Melvin

Proceedings Volume 6521, 65211M (2007) https://doi.org/10.1117/12.712513

KEYWORDS: 3D modeling, Photomasks, Atrial fibrillation, Optical proximity correction, Lithography, Near field, Resolution enhancement technologies, TCAD, Performance modeling, 3D metrology

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Proceedings Article | 15 March 2006 Paper

Calibrating OPC models using asymmetric structures

Laurent Depre, Christopher Cork, Qiliang Yan

Proceedings Volume 6154, 61541P (2006) https://doi.org/10.1117/12.659715

KEYWORDS: Calibration, Data modeling, Statistical modeling, Monochromatic aberrations, Optical proximity correction, 3D modeling, Performance modeling, Process modeling, Critical dimension metrology, Error analysis

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Proceedings Article | 28 June 2005 Paper

Process model quality assessment by sensitivity analysis

Qiliang Yan, Lawrence Melvin, James Shiely

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617197

KEYWORDS: Data modeling, Process modeling, Mathematical modeling, Image processing, Optical proximity correction, Resolution enhancement technologies, Model-based design, Silicon, Photoresist materials, Photomasks

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Proceedings Article | 6 May 2005 Paper

Approximation of three dimensional mask effects with two dimensional features

Min Bai, Lawrence Melvin, Qiliang Yan, James Shiely, Bradley Falch, Chong-Cheng Fu, Ruoping Wang

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600547

KEYWORDS: 3D modeling, Photomasks, Optical proximity correction, Calibration, Data modeling, Transmittance, Phase shifts, Reticles, Lithography, 3D metrology

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Proceedings Article | 5 May 2005 Paper

Detecting focus-sensitive configurations during OPC

Lawrence Melvin, James Shiely, Qiliang Yan

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.601062

KEYWORDS: Optical proximity correction, Process modeling, Manufacturing, Spatial frequencies, Model-based design, Calibration, Lithography, Optimization (mathematics), Design for manufacturability, Fourier transforms

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Showing 5 of 17 publications

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