HgCdTe crystals are very important semiconductors for the realization of infrared (IR) detectors, and as a rule an optimal response range is usually expected by controlling the exact balance of the ternary compound. Two approaches are available for the synthesis of HgCdTe semiconductors. The first is the well-known alloy process, in which the bandgap is tailored by varying the mole fraction x of CdTe in an Hg1-xCdxTe alloy. The second is a superlattice structure, in which the bandgap is determined by the relative thicknesses of alternating HgTe and CdTe layers in a composite semiconductor. This Overview concerns colloidal synthesis, which is used as a new technology for obtaining new plasmon materials - transparent self-assembled conductive Ag2O, Ag, graphene oxides in the production of plasmon material based on HgCdTe (MCT). In general, the results will be used to create multi-range HgCdTe detectors based on the plasmon resonance effect.
Ultrasonically stimulated effects in Hg1-xCdxTe alloys were studied. Dependencies of Hall coefficient and conductivity of n- and p-MCT samples from temperature ( T=77÷300° K ) and magnetic field ( B=0÷0.7 T ) were investigated during ultrasonic influence and after ultrasonic treatment with frequency fUS = 5÷8 MHz and intensity WUS ⪝ 0.5•104 W/m2. It was shown that the action of the acoustic wave excited in Hg1-xCdxTe crystal by piezo-transducer results in an essential change of the carrier concentration up to change of the conduction type. The possible mechanism of sonic-stimulated effects was discussed in the frame of the intensive sonic-dislocation interaction model. The possibility of the thermooptical excitation of solid with activation of internal sources of the infrared radiation as a consequence of the acoustic wave energy absorption was determined.
The results of the investigations of the transport properties of n- and p-CdxHg1-xTe semiconductor crystals behavior at intensive ultrasonic are presented. Acoustostimulated phenomenon of mobility increasing and change of concentration are observed in region of impurity conductivity. The possible mechanisms of the acoustodynamic processes are analyzed. At first the phenomenon of the acoustostimulated p yields n conversion had been detected in p-CdxHg1-xTe at T < 120 K.
In this report a review of numerous experimental investigations of electrophysical, photoelectric and structural CdxHg1-x Te crystals properties changes as a result of ultrasound treatment is presented. Influence of peculiarities of ultrasound treatment effect such as dependence on initial crystal physical parameters and ultrasound treatment characteristics (frequency, intensity) are analyzed.
In this paper we propose the new method of ultrasonic sensitive centers study. The semiconductor samples are measure by Hall effect method and simotaneously are exposed to ultrasonic treatment. Ultrasound acoustoactivates any centers which don't be activated under ordinary conditions and can't be displayed by the ordinary Hall method. Such temperatures (80:350 K) investigation with ultrasonic influence (time and amplitude dependences also) significantly increases and completes Hall method possibilities. The crystals of neutrontrasmutation dopes Ge:Sb were studied.
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