Built on the previous study on the negative-tone resist platform, we developed a series of new resists with higher thermal stability enabling PEB temperature above 80°C, with improved pattern quality. Peripheral materials, including developers and under layers, are investigated as well to mitigate pattern collapse and enable patterning line/space below 32nm pitch with LER of 3nm or less. The resists are also capable of printing pillar pattern below 34nm pitch with LCDU below 3nm. A combination of EUV and DSA rectification processes reduces cost of ownership (COO) and attains low roughness with defectivity improvement potentially. The process has great potential in extending resolution below 28nm pitch using 0.33 NA EUV.
Extreme ultraviolet (EUV) lithography is part of the high-volume manufacturing (HVM) processes for devices beyond 7 nm node. However, the technology still has several issues for HVM. Especially, RLS (Resolution, LWR, and Sensitivity) trade-off remains as one of the obvious problems for EUV Lithography. In which, resist pattern collapse is one of the hurdles that is preventing a process window/margin for resist patterning. Resist, under-layer, and rinse materials are continuously being developed to mitigate resist pattern collapse. In such status, rinse materials for chemically amplified resist (CAR) in the development process are known well as one approach for mitigation of the pattern collapse. In this study, we focused on the effectiveness of rinse material against lithography performance with parameters, such as surface tension and affinity with resist. In the paper, Rinse material considering low surface tension and low affinity with resist exhibited significant pattern collapse mitigation and wide process window at 28nm pitch. In addition to the rinse study, a new rinse process was investigated focusing on resist surface modification for more pattern collapse mitigation than the conventional process by suppression of water droplet generation. Furthermore, New rinse process exhibited better pattern collapse margin than the conventional rinse process.
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