In this work, we analyze passive parameters for a band of 1500 to 1600 nm in microring resonators (MRRs). Such analysis can be vital for estimating an appropriate parameter design exploration with potential applications on Wavelength Division Multiplexing (WDM) solutions. Using a coupled mode theory-based method, we found optimal design spaces for MRRs with radii from 5 to 10 µm and bus-ring gap from 0.12 to 0.21 µm. For All-Pass MRRs, we found an optimal design space where the transmittances in the resonant frequencies are down to 8% in the Through port, while for the Add-Drop MRRs, we found an optimal design space where for transmittances in the Drop port are from 0.77 to 1. We also found optimal design spaces for Q-factors between 2000 and 3800. To find the optimal ring/radius and bus-ring gap values inside the design spaces, we use the particle swarm optimization technique. The data obtained with the exhibited work also shows a modal analysis for the supermodes formed by the cross-section of the bus-ring interface and the impact of UV-lithography common fabrication errors, even due to wafer die positioning. With the latter, our work provides a comprehensive design space exploration and helps designers to know the effect that typical structural fabrication errors will have on the passive resonance.
III-V materials with quantum wells or quantum dot active regions have proven to be relatively efficient devices for amplifying light. However, integration and scaling of many other functions are moving towards the development of ever more complex photonic integrated circuits (PICs). Assembling these devices into hybrid/heterogeneous PICs poses a challenge in terms of bandwidth and footprint. In this work, we propose a Particle Swarm Optimized methodology to generate non-intuitive structures that couple light vertically from a III-V platform to a silicon-on-insulator chip. By designing heuristically optimized III-V and silicon tapers, we can overcome the limitations of typical linearly-varying spot-size converters in terms of footprint, without sacrificing bandwidth. Furthermore, the optimization parameters are adjusted to fit the usual design rule constraints that are ready for mass production, namely UV-lithography limits.
Silicon modulators paved the way for silicon photonics to take control of optical interconnects. Since its popularization, most works use the 1-D diode model approximation to design the horizontal PN junction, which estimates the modulator bandwidth and efficiency. Some works do not even consider the effects of fringe capacitance, alleging that the junction’s dimensions are large. The 1-D model is suitable for vertically uniform PN junctions. However, there are essential deviations for the typical rib waveguide used in most horizontal-junction silicon modulators. Our work aims to quantify such deviations incorporating details from 2D model simulations and offer a corrected 1-D model for estimating modulation bandwidth. This study was carried out as follows: firstly, we incorporated an improved scheme for phase shifting and loss for different junction locations and widely used doping concentrations. Next, we analyzed the generation-recombination effects and their impact on the depletion width at the top and bottom of the waveguide. We calculated the depletion width via the 1-D model and the two-dimensional Poisson’s equation finite-element calculation for the rib and identified an important mismatch. Lastly, we propose and demonstrate an accurate equivalent circuit with our 1-D model corrections. Our model considers the total depletion capacitance, the fringe capacitance, the capacitance due to the wider depletion widths at the top and bottom surfaces of the diode, and other capacitive effects at the border of the rib as a result of high reverse bias. We found that although the 1-D model is well-suited for small reverse biases, higher voltages and extreme junction locations affect the bandwidth’s estimation dramatically.
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