We propose a construction and calibration method of an absolute coordinate system for lithography tools. In the conventional overlay control system, subsequent layers are overlaid on the 1st layer that could have unknown wafer distortion. This is inefficient, because the distortion of the 1st layer may be large. A high-level overlay control can be realized with the absolute coordinate system by correcting the 1st layer to zero distortion. This can be possible by using absolute alignment metrology system. In order to confirm our theory, we report experimental results of the absolute grid construction and matching accuracy among multiple lithography tools.
A standalone alignment technology was developed as a fundamental solution to improve on-product overlay (OPO). It enables high performance alignment measurements, and delivers state-of-the-art feed-forward corrections to exposure scanners. Dense alignment sampling and high order alignment correction is effective for scanner fingerprint matching and for correcting heavy distortion at a wafer edge. A mark asymmetry correction is detailed as effective solution which improves the OPO performance for heavily processed wafers. An OPO test result showed significant improvement using its feed-forward corrections. A high accuracy topography sensor is described as a new metrology innovation. The standalone alignment technology provides critical metrology tool functions such as process monitoring as well.
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