Dr. Sean D. Burns Profile

Dr. Sean D. Burns

Manager, Design Technology and Innovation at IBM Corp

SPIE Involvement:

Author

Publications (31)

Proceedings Article | 22 April 2021 Presentation + Paper

Speeding up OPC by leveraging existing designs with machine learning

Cheng Chi, Julian Dolby, Jeffrery Shearer, Derren Dunn, Sean Burns

Proceedings Volume 11614, 116140N (2021) https://doi.org/10.1117/12.2584621

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Proceedings Article | 17 April 2020 Presentation + Paper

Dual tone sub-resolution assist features to improve corner rounding

Cheng Chi, Hao Tang, Oseo Park, Jing Xue, Jing Guo, Geng Han, Charlie King, Jeff Shearer, Sean Burns

Proceedings Volume 11327, 113270E (2020) https://doi.org/10.1117/12.2550834

KEYWORDS: SRAF, Photomasks, Semiconducting wafers, Optical proximity correction, Data modeling, Yield improvement, Optics manufacturing, Optical lithography, Deep ultraviolet, Logic

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Proceedings Article | 13 April 2017 Presentation + Paper

Electrical study of DSA shrink process and CD rectification effect at sub-60nm using EUV test vehicle

Cheng Chi, Chi-Chun Liu, Luciana Meli, Jing Guo, Doni Parnell, Yann Mignot, Kristin Schmidt, Martha Sanchez, Richard Farrell, Lovejeet Singh, Tsuyoshi Furukawa, Kafai Lai, Yongan Xu, Daniel Sanders, David Hetzer, Andrew Metz, Sean Burns, Nelson Felix, John Arnold, Daniel Corliss

Proceedings Volume 10146, 101460Q (2017) https://doi.org/10.1117/12.2260454

KEYWORDS: Etching, Directed self assembly, Polymethylmethacrylate, Critical dimension metrology, Picosecond phenomena, Oxides, Scanning electron microscopy, Optical lithography, Extreme ultraviolet, Metals

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Proceedings Article | 1 April 2016 Paper

Lithographic qualification of high-transmission mask blank for 10nm node and beyond

Yongan Xu, Tom Faure, Ramya Viswanathan, Granger Lobb, Richard Wistrom, Sean Burns, Lin Hu, Ioana Graur, Ben Bleiman, Dan Fischer, Yann Mignot, Yoshifumi Sakamoto, Yusuke Toda, John Bolton, Todd Bailey, Nelson Felix, John Arnold, Matthew Colburn

Proceedings Volume 9780, 978006 (2016) https://doi.org/10.1117/12.2219778

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Lithography, Transmittance, Resolution enhancement technologies, Printing, SRAF, Critical dimension metrology, Phase shifts

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Proceedings Article | 22 March 2016 Paper

DSA patterning options for FinFET formation at 7nm node

Chi-Chun Liu, Elliott Franke, Fee Li Lie, Stuart Sieg, Hsinyu Tsai, Kafai Lai, Hoa Truong, Richard Farrell, Mark Somervell, Daniel Sanders, Nelson Felix, Michael Guillorn, Sean Burns, David Hetzer, Akiteru Ko, John Arnold, Matthew Colburn

Proceedings Volume 9777, 97770R (2016) https://doi.org/10.1117/12.2219670

KEYWORDS: Directed self assembly, Optical lithography, Lithography, Line edge roughness, Etching, Silicon, Image processing, Neodymium, Polymethylmethacrylate

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Proceedings Article | 19 March 2015 Paper

Fin formation using graphoepitaxy DSA for FinFET device fabrication

Chi-Chun Liu, Fee Li Lie, Vinayak Rastogi, Elliott Franke, Nihar Mohanty, Richard Farrell, Hsinyu Tsai, Kafai Lai, Melih Ozlem, Wooyong Cho, Sung Gon Jung, Jay Strane, Mark Somervell, Sean Burns, Nelson Felix, Michael Guillorn, David Hetzer, Akiteru Ko, Matthew Colburn

Proceedings Volume 9423, 94230S (2015) https://doi.org/10.1117/12.2086053

KEYWORDS: Etching, Lithography, Silicon, Oxides, Atomic layer deposition, Scanning electron microscopy, Polymethylmethacrylate, Image processing, Directed self assembly

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Proceedings Article | 20 March 2012 Paper

Assessment of negative tone development challenges

Sohan Mehta, Yongan Xu, Guillaume Landie, Vikrant Chauhan, Sean Burns, Peggy Lawson, Bassem Hamieh, Jerome Wandell, Martin Glodde, Yu Yang Sun, Mark Kelling, Alan Thomas, Jeong Soo Kim, James Chen, Hirokazu Kato, Chiahsun Tseng, Chiew-Seng Koay, Yoshinori Matsui, Martin Burkhardt, Yunpeng Yin, David Horak, Shyng-Tsong Chen, Yann Mignot, Yannick Loquet, Matthew Colburn, John Arnold, Terry Spooner, Lior Huli, Dave Hetzer, Jason Cantone, Shinichiro Kawakami, Shannon Dunn

Proceedings Volume 8325, 832506 (2012) https://doi.org/10.1117/12.917560

KEYWORDS: Semiconducting wafers, Polymers, Optical proximity correction, Reactive ion etching, Etching, Scanning electron microscopy, Neodymium, Photoresist developing, Image processing, Roads

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Proceedings Article | 16 April 2011 Paper

Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)

Guillaume Landie, Yongan Xu, Sean Burns, Kenji Yoshimoto, Martin Burkhardt, Larry Zhuang, Karen Petrillo, Jason Meiring, Dario Goldfarb, Martin Glodde, Anthony Scaduto, Matthew Colburn, Jason Desisto, Young Bae, Michael Reilly, Cecily Andes, Vaishali Vohra

Proceedings Volume 7972, 797206 (2011) https://doi.org/10.1117/12.882843

KEYWORDS: Photoresist developing, Photoresist materials, Polymers, Systems modeling, Semiconducting wafers, Optical lithography, Optical proximity correction, Photomasks, Etching, Nanoimprint lithography

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Proceedings Article | 16 April 2011 Paper

Optimization of pitch-split double patterning photoresist for applications at the 16nm node

Steven Holmes, Cherry Tang, Sean Burns, Yunpeng Yin, Rex Chen, Chiew-seng Koay, Sumanth Kini, Hideyuki Tomizawa, Shyng-Tsong Chen, Nicolette Fender, Brian Osborn, Lovejeet Singh, Karen Petrillo, Guillaume Landie, Scott Halle, Sen Liu, John Arnold, Terry Spooner, Rao Varanasi, Mark Slezak, Matthew Colburn

Proceedings Volume 7972, 79720G (2011) https://doi.org/10.1117/12.881489

KEYWORDS: Photoresist processing, Reactive ion etching, Lithography, Photomasks, Dielectrics, Etching, Scanning electron microscopy, Double patterning technology, Semiconductors, Optical lithography

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Proceedings Article | 23 March 2011 Paper

Spacer-defined double patterning for 20nm and beyond logic BEOL technology

Ryoung-Han Kim, Chiew-seng Koay, Sean Burns, Yunpeng Yin, John Arnold, Christopher Waskiewicz, Sanjay Mehta, Martin Burkhardt, Matthew Colburn, Harry Levinson

Proceedings Volume 7973, 79730N (2011) https://doi.org/10.1117/12.881701

KEYWORDS: Double patterning technology, Back end of line, Metals, Lithography, Etching, Logic, Dielectrics, Optical lithography, Front end of line, Scanning electron microscopy

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Proceedings Article | 23 March 2010 Paper

EUV lithography at the 22nm technology node

Obert Wood, Chiew-Seng Koay, Karen Petrillo, Hiroyuki Mizuno, Sudhar Raghunathan, John Arnold, Dave Horak, Martin Burkhardt, Gregory McIntyre, Yunfei Deng, Bruno La Fontaine, Uzo Okoroanyanwu, Tom Wallow, Guillaume Landie, Theodorus Standaert, Sean Burns, Christopher Waskiewicz, Hirohisa Kawasaki, James H.-C. Chen, Matthew Colburn, Bala Haran, Susan S.-C. Fan, Yunpeng Yin, Christian Holfeld, Jens Techel, Jan-Hendrik Peters, Sander Bouten, Brian Lee, Bill Pierson, Bart Kessels, Robert Routh, Kevin Cummings

Proceedings Volume 7636, 76361M (2010) https://doi.org/10.1117/12.847049

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Photomasks, Immersion lithography, Double patterning technology, Optical proximity correction, Printing, Lithography, Optical lithography, Metals

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Proceedings Article | 4 March 2010 Paper

Evaluation of double-patterning techniques for advanced logic nodes

Chiew-Seng Koay, Steven Holmes, Karen Petrillo, Matthew Colburn, Sean Burns, Shannon Dunn, Jason Cantone, David Hetzer, Shinichiro Kawakami, Youri van Dommelen, Aiqin Jiang, Michael Many, Robert Routh, Lior Huli, Brian Martinick, Martin Rodgers, Hideyuki Tomizawa, Sumanth Kini

Proceedings Volume 7640, 764009 (2010) https://doi.org/10.1117/12.846769

KEYWORDS: Double patterning technology, Semiconducting wafers, Scanners, Overlay metrology, Photoresist processing, Chemical reactions, Semiconductors, Thin film coatings, Scanning electron microscopy, Logic

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Proceedings Article | 16 March 2009 Paper

Overcoming the challenges of 22-nm node patterning through litho-design co-optimization

Martin Burkhardt, J. C. Arnold, Z. Baum, S. Burns, J. Chang, J. Chen, J. Cho, V. Dai, Y. Deng, S. Halle, G. Han, S. Holmes, D. Horak, S. Kanakasabapathy, R. H. Kim, A. Klatchko, C. S. Koay, A. Krasnoperova, Y. Ma, E. McLellan, K. Petrillo, S. Schmitz, C. Tabery, Y. Yin, L. Zhuang, Y. Zou, J. Kye, V. Paruchuri, S. Mansfield, C. Spence, M. Colburn

Proceedings Volume 7274, 727404 (2009) https://doi.org/10.1117/12.814433

KEYWORDS: Etching, Lithography, Printing, Optical lithography, Double patterning technology, Resolution enhancement technologies, Logic, Metals, Photomasks, Tolerancing

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Proceedings Article | 1 April 2008 Paper

32 nm logic patterning options with immersion lithography

K. Lai, S. Burns, S. Halle, L. Zhuang, M. Colburn, S. Allen, C. Babcock, Z. Baum, M. Burkhardt, V. Dai, D. Dunn, E. Geiss, H. Haffner, G. Han, P. Lawson, S. Mansfield, J. Meiring, B. Morgenfeld, C. Tabery, Y. Zou, C. Sarma, L. Tsou, W. Yan, H. Zhuang, D. Gil, D. Medeiros

Proceedings Volume 6924, 69243C (2008) https://doi.org/10.1117/12.784107

KEYWORDS: Photomasks, Double patterning technology, Logic, Lithography, Etching, Optical lithography, Optical proximity correction, Immersion lithography, Printing, Image processing

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The semiconductor industry faces a lithographic scaling limit as the industry completes the transition to 1.35 NA immersion lithography. Both high-index immersion lithography and EUV lithography are facing technical challenges and commercial timing issues. Consequently, the industry has focused on enabling double patterning technology (DPT) as a means to circumvent the limitations of Rayleigh scaling. Here, the IBM development alliance demonstrate a series of double patterning solutions that enable scaling of logic constructs by decoupling the pattern spatially through mask design or temporally through innovative processes. These techniques have been successfully employed for early 32nm node development using 45nm generation tooling. Four different double patterning techniques were implemented. The first process illustrates local RET optimization through the use of a split reticle design. In this approach, a layout is decomposed into a series of regions with similar imaging properties and the illumination conditions for each are independently optimized. These regions are then printed separately into the same resist film in a multiple exposure process. The result is a singly developed pattern that could not be printed with a single illumination-mask combination. The second approach addresses 2D imaging with particular focus on both line-end dimension and linewidth control [1]. A double exposure-double etch (DE2) approach is used in conjunction with a pitch-filling sacrificial feature strategy. The third double exposure process, optimized for via patterns also utilizes DE2. In this method, a design is split between two separate masks such that the minimum pitch between any two vias is larger than the minimum metal pitch. This allows for final structures with vias at pitches beyond the capability of a single exposure. In the fourth method,, dark field double dipole lithography (DDL) has been successfully applied to BEOL metal structures and has been shown to be overlay tolerant [6]. Collectively, the double patterning solutions developed for early learning activities at 32nm can be extended to 22nm applications.

Proceedings Article | 26 March 2008 Paper

Graded spin-on organic bottom antireflective coating for high NA lithography

Dario Goldfarb, Sean Burns, Libor Vyklicky, Dirk Pfeiffer, Anthony Lisi, Karen Petrillo, John Arnold, Daniel Sanders, Aleksandra Clancy, Robert Lang, Robert Allen, David Medeiros, Dah Chung Owe-Yang, Kazumi Noda, Seiichiro Tachibana, Shozo Shirai

Proceedings Volume 6923, 69230V (2008) https://doi.org/10.1117/12.772268

KEYWORDS: Reflectivity, Polymers, Photoresist materials, Silicon, Etching, Lithography, Optical lithography, Interfaces, Multilayers, Semiconducting wafers

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Proceedings Article | 26 March 2007 Paper

Dark Field Double Dipole Lithography (DDL) for back-end-of-line processes

M. Burkhardt, Sean Burns, Derren Dunn, T. Brunner, Stephen Hsu, Jungchul Park

Proceedings Volume 6520, 65200K (2007) https://doi.org/10.1117/12.713277

KEYWORDS: Photomasks, SRAF, Lithography, Optical proximity correction, Photoresist processing, Metals, Lithographic illumination, Printing, Resolution enhancement technologies, Fiber optic illuminators

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Proceedings Article | 29 March 2006 Paper

Silicon containing polymer in applications for 193-nm high-NA lithography processes

Sean Burns, Dirk Pfeiffer, Arpan Mahorowala, Karen Petrillo, Alexandera Clancy, Katherina Babich, David Medeiros, Scott Allen, Steven Holmes, Michael Crouse, Colin Brodsky, Victor Pham, Yi-Hsiung Lin, Kaushal Patel, Naftali Lustig, Allen Gabor, Christopher Sheraw, Phillip Brock, Carl Larson

Proceedings Volume 6153, 61530K (2006) https://doi.org/10.1117/12.657197

KEYWORDS: Silicon, Reflectivity, Etching, Photoresist materials, Polymers, Lithography, Oxides, Silicon films, Reactive ion etching, Optical lithography

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Proceedings Article | 4 May 2005 Paper

Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation

Hiroshi Ito, Hoa Truong, Sean Burns, Dirk Pfeiffer, Wu-Song Huang, Mahmoud Khojasteh, P. Rao Varanasi, Mike Lercel

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598847

KEYWORDS: Polymers, Silicon, Etching, Lithography, Monochromatic aberrations, Resistance, FT-IR spectroscopy, Quartz, Crystals, Spectroscopy

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Polysilsesquioxane-based 193 nm positive bilayer resists are described. In this design Si for etch resistance is placed in every repeat unit and acid-labile protected and acidic groups (and polar units) are in the side chain, allowing to incorporate each lithographically critical functionality in sufficient quantity. Fluoroalcohol is employed as an acid group instead of carboxylic acid because of its more attractive dissolution properties. Polymers were carefully analyzed by ¹⁹F, ¹³C, and ²⁹Si NMR to determine composition and to quantify residual acetyl, silanol, and Q/T. Hydrogen-bonding between tertiary ester and fluoroalcohol in the polysilsesquioxanes was investigated by FT-IR and the effect of lactone incorporation on the thermal deprotection temperature elucidated. In order to better understand the dissolution behavior of exposed resist films, the silsesquioxane resist polymers were partially (ca. 30%) and fully deprotected in solution with acid and their dissolution kinetics investigated by using a quartz crystal microbalance (QCM). It has been found that the exposed areas of the silsesquioxane resists can have a very fast dissolution rate (R_max) of >20,000 A/sec (or even >100,000 A/sec). Heating the fully deprotected model polymers to 150°C did not reduce the dissolution rate much, suggesting thermal condensation of silanol end groups is insignificant. Model deprotected polymers containing triphenylsulfonium nonaflate were exposed to 254 nm radiation, baked, and subjected to QCM measurements in order to determine whether or not acid-catalyzed silanol condensation would reduce the dissolution rate. A combination of high dose and high temperature bake resulted in significant reduction of the dissolution rate in the silsesquioxane polymer containing a small trifluoroalcohol. However, the dissolution behavior of the polymer bearing a bulky norbornene hexafluoroalcohol was unaffected by exposure and bake. Chemical and development contrast curves were generated by using a temperature gradient plate and bake temperature effects investigated. While a postapply bake temperature variation from 95 to 130°C did not affect the contrast (chemical and development) and sensitivity, a postexposure bake temperature effect was quite small. The process window of the silsesquioxane bilayer resists was comparable to that of a high performance commercial 193 nm single layer resist for both isolated and nested contact hole imaging, Superior performance of our silsesquioxane resist was demonstrated in patterned etch in comparison with a COMA-based bilayer resist.

Proceedings Article | 4 May 2005 Paper

Molecular resists based on polyhedral oligomeric silsesquioxanes (POSS)

Ratnam Sooriyakumaran, Hoa Truong, Linda Sundberg, Mark Morris, Bill Hinsberg, Hiroshi Ito, Robert Allen, Wu-Song Huang, Dario Goldfarb, Sean Burns, Dirk Pfeiffer

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600615

KEYWORDS: Silicon, Line edge roughness, Polymers, Glasses, Standards development, Diffusion, Lithography, Spectroscopy, Macromolecules, Chemically amplified resists

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Proceedings Article | 20 May 2004 Paper

Mesoscale modeling for SFIL simulating polymerization kinetics and densification

Ryan Burns, Stephen Johnson, Gerard Schmid, Eui Kim, Michael Dickey, Jason Meiring, Sean Burns, Nicholas Stacey, C. Grant Willson, Diana Convey, Yi Wei, Peter Fejes, Kathleen Gehoski, David Mancini, Kevin Nordquist, William Dauksher, Douglas Resnick

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.536216

KEYWORDS: Etching, Polymerization, Molecules, Monte Carlo methods, Finite element methods, Lithography, Ultraviolet radiation, Molecular interactions, Scanning electron microscopy, Optical lithography

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Proceedings Article | 14 May 2004 Paper

Rinse additives for line-edge roughness control in 193-nm lithography

Dario Goldfarb, Sean Burns, Ryan Burns, Colin Brodsky, Margaret Lawson, Marie Angelopoulos

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537723

KEYWORDS: Line edge roughness, Critical dimension metrology, Lithography, Semiconducting wafers, Extreme ultraviolet lithography, Photoresist materials, Photoresist developing, Photoresist processing, Standards development, Optical lithography

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Proceedings Article | 14 May 2004 Paper

Implications of immersion lithography on 193-nm photoresists

J. Christopher Taylor, Charles Chambers, Ryan Deschner, Robert LeSuer, Willard Conley, Sean Burns, C. Willson

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535875

KEYWORDS: Water, Photoresist materials, Polymers, Semiconducting wafers, Scintillation, Immersion lithography, Liquids, Refraction, Silicon, Spectroscopic ellipsometry

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Proceedings Article | 14 May 2004 Paper

Rinse additives for defect suppression in 193-nm and 248-nm lithogrophy

Spyridon Skordas, Ryan Burns, Dario Goldfarb, Sean Burns, Marie Angelopoulos, Colin Brodsky, Margaret Lawson, Carole Pillette, Jeffrey Bright, Robert Isaacson, Mark Lagus, Vandana Vishnu

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537764

KEYWORDS: Adsorption, Lithography, Semiconducting wafers, Polymers, Photoresist processing, Satellites, Molecules, Particles, Photoresist developing, 193nm lithography

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Proceedings Article | 12 June 2003 Paper

Fundamental study of photoresist dissolution with real-time spectroscopic ellipsometry and interferometry

Sean Burns, Gerard Schmid, Brian Trinque, James Willson, Jennifer Wunderlich, Pavlos Tsiartas, James Taylor, Ryan Burns, C. Wilson

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485182

KEYWORDS: Polymers, Interferometry, Data modeling, Photoresist materials, Water, Ellipsometry, Spectroscopic ellipsometry, Reflectivity, Refraction, Thin films

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Proceedings Article | 24 July 2002 Paper

Effect of humidity on deprotection kinetics in chemically amplified resists

Sean Burns, David Medeiros, Heather Johnson, Gregory Wallraff, William Hinsberg, C. Grant Willson

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474230

KEYWORDS: Humidity, Photoresist materials, Nitrogen, FT-IR spectroscopy, Semiconducting wafers, Chemically amplified resists, Environmental monitoring, Polymers, Switching, Spectroscopy

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Proceedings Article | 24 July 2002 Paper

Measurement of the spatial evolution of the deprotection reaction front with nanometer resolution using neutron reflectometry

Eric Lin, Christopher Soles, Dario Goldfarb, Brian Trinque, Sean Burns, Ronald Jones, Joseph Lenhart, Marie Angelopoulos, C. Grant Willson, Sushil Satija, Wen-li Wu

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474229

KEYWORDS: Polymers, Reflectivity, Interfaces, X-rays, Reflectometry, Photoresist materials, Spatial resolution, Diffusion, Data modeling, Scattering

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Proceedings Article | 24 July 2002 Paper

Mesoscale simulation of positive tone chemically amplified photoresists

Gerard Schmid, Sean Burns, Michael Stewart, C. Grant Willson

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474237

KEYWORDS: Monte Carlo methods, Polymers, Photoresist materials, Ions, Computer simulations, Molecules, Lithography, Line edge roughness, Chemically amplified resists, Polymer thin films

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Proceedings Article | 24 August 2001 Paper

Understanding nonlinear dissolution rates in photoresists

Sean Burns, Allen Gardiner, Val Krukonis, Paula Wetmore, Jodie Lutkenhaus, Gerard Schmid, Lewis Flanagin, C. Grant Willson

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436876

KEYWORDS: Polymers, Oxygen, Surface roughness, Picture Archiving and Communication System, Medium wave, Polymer thin films, Photoresist materials, Ionization, FT-IR spectroscopy, Oxidation

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Proceedings Article | 24 August 2001 Paper

Dissolution behavior of fluoroalcohol-substituted polystyrenes

Daniel Hall, Brian Osborn, Kyle Patterson, Sean Burns, C. Grant Willson

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436831

KEYWORDS: Polymers, Absorbance, Photoresist materials, Semiconducting wafers, Head-mounted displays, Coating, Liquids, Analog electronics, Magnesium, Nitrogen

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Proceedings Article | 24 August 2001 Paper

Understanding molecular-level effects during post-exposure processing

Gerard Schmid, Mark Smith, Chris Mack, Vivek Singh, Sean Burns, C. Grant Willson

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436829

KEYWORDS: Polymers, Photoresist materials, Molecules, Photoresist developing, Lithography, Computer simulations, Polymer thin films, 3D modeling, Scanning electron microscopy, Mathematical modeling

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Proceedings Article | 23 June 2000 Paper

Recent advances in a molecular level lithography simulation

Gerard Schmid, Vivek Singh, Lewis Flanagin, Michael Stewart, Sean Burns, C. Grant Willson

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388354

KEYWORDS: Polymers, Computer simulations, Molecules, Diffusion, Lithography, Monte Carlo methods, Photoresist materials, Performance modeling, Deep ultraviolet, Polymer thin films

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