Dr. Sheng S. Li Profile

Dr. Sheng S. Li

Professor at Univ of Florida

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Publications (14)

Proceedings Article | 10 October 2003 Paper

An In_0.6Ga_0.4As/GaAs quantum dot infrared photodetector with operating temperature up to 260K

Lin Jiang, Sheng Li, Nien-Tze Yeh, Jen-Inn Chyi

Proceedings Volume 5074, (2003) https://doi.org/10.1117/12.487034

KEYWORDS: Photodetectors, Electrons, Quantum well infrared photodetectors, Infrared radiation, Quantum dots, Gallium arsenide, Infrared photography, Infrared detectors, Quantum IR detectors, Indium gallium phosphide

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Proceedings Article | 5 August 2002 Paper

Two-stack three-color quantum well infrared photodetector for mid- and long-wavelength infrared detection

Sheng Li, Seung-Hwan Kim, Jun-Hee Moon, Jung Lee, Meimei Tidrow, Walter Dyer

Proceedings Volume 4721, (2002) https://doi.org/10.1117/12.478848

KEYWORDS: Quantum well infrared photodetectors, Long wavelength infrared, Mid-IR, Quantum wells, Gallium arsenide, Infrared detectors, Infrared radiation, Temperature metrology, Gallium, Staring arrays

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Proceedings Article | 7 April 1999 Paper

Broadband quantum well infrared photodetectors

Sheng Li, Jerome Chu, Jiangchi Chiang, Jung Lee, Anjali Singh

Proceedings Volume 3629, (1999) https://doi.org/10.1117/12.344551

KEYWORDS: Quantum wells, Quantum well infrared photodetectors, Gallium arsenide, Long wavelength infrared, Gallium, Infrared radiation, Electroluminescence, Absorption, Chlorine, Analytical research

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Typical quantum well infrared photodetectors (QWIPs) exhibit rather narrow spectral bandwidth of 1 to 2 micrometer. For certain applications, such as spectroscopy, sensing of a broader range of infrared radiation is highly desirable. In this work, we report the design of five broadband (BB-) QWIPs sensitive over the 7 to 14 micrometer spectral range. Three n- type BB-QWIPs consisting of three, four, and five quantum wells of different thickness and/or composition in a unit cell, which are then repeated 20 times for the three and four quantum wells (QW) devices and 3 times for the five QWs device to create the BB-QWIP structures, are demonstrated. The three- well n-type In_xGa_1-xAs/Al_yGa_1-yAs BB-QWIP is designed to have a response peak at 10 micrometer, with a FWHM bandwidth that varies with the applied bias. A maximum bandwidth of (Delta) (lambda) /(lambda) _p equals 21% was obtained for this device at V_b equals -2 V. The four- well n-type In_xGa_1-xAs/GaAs BB-QWIP not only exhibits a very large responsivity of 2.31 A/W at 10.3 micrometer and V_b equals +4.5 V, but also achieves a broader bandwidth of (Delta) (lambda) /(lambda) _p equals 29% than the three-well device. The five-well n-type In_xGa_{1- x}As/GaAs BB-QWIP has achieved a FWHM bandwidth of (Delta) (lambda) /(lambda) _p equals 28% at V_b equals 1.75 V. In addition, two p-type In_xGa_1-xAs/GaAs BB-QWIPs with variable well thickness and composition, sensitive in the 7 - 14 micrometer spectral range, are also demonstrated. The variable composition p-type BB-QWIP has a very large FWHM bandwidth of (Delta) (lambda) /(lambda) _p equals 48% at V_b equals -1.5 V and T equals 40 K. The variable thickness p- type BB-QWIP was found to have an even broader FWHM bandwidth of (Delta) (lambda) /(lambda) _p equals 63% at V_b equals 1.1 V and T equals 40 K, with a corresponding peak responsivity of 25 mA/W at 10.2 micrometer. The results reveal that p-type BB- QWIPs have a broader and flatter spectral bandwidth but lower responsivity than that of n-type BB-QWIPs under similar operating conditions.

Proceedings Article | 11 August 1998 Paper

Comparison of n- and p-type quantum well infrared photodetectors

Sheng Li, Meimei Tidrow

Proceedings Volume 3553, (1998) https://doi.org/10.1117/12.318094

KEYWORDS: Quantum well infrared photodetectors, Quantum wells, Absorption, Gallium arsenide, Mid-IR, Long wavelength infrared, Doping, Stereolithography, Staring arrays, Physics

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Proceedings Article | 22 July 1998 Paper

Two-stack indirect-barrier/triple-coupled quantum well infrared photodetector for mid-wavelength and long-wavelength infrared detection

Jiangchi Chiang, Sheng Li, Anjali Singh

Proceedings Volume 3379, (1998) https://doi.org/10.1117/12.317594

KEYWORDS: Long wavelength infrared, Quantum well infrared photodetectors, Mid-IR, Quantum wells, Infrared detectors, Photovoltaics, Gallium arsenide, Infrared radiation, Electroluminescence, Staring arrays

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Proceedings Article | 22 July 1998 Paper

High-sensitivity normal incidence triple-coupled quantum well IR photodetector for lower-background infrared detection

JungChi Chiang, Sheng Li, Anjali Singh

Proceedings Volume 3379, (1998) https://doi.org/10.1117/12.317589

KEYWORDS: Quantum well infrared photodetectors, Quantum wells, Photodetectors, Infrared imaging, Absorption, Infrared detection, Gallium arsenide, Long wavelength infrared, Gallium, Staring arrays

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Proceedings Article | 22 July 1998 Paper

Simplified QWIPs for low-temperature and low-background applications

Meimei Tidrow, Daniel Beekman, Stephen Kennerly, Xudong Jiang, Sheng Li, Anjali Singh, Mark Dodd

Proceedings Volume 3379, (1998) https://doi.org/10.1117/12.317593

KEYWORDS: Quantum well infrared photodetectors, Quantum efficiency, Quantum wells, Electrons, Absorption, Doping, Sensors, Target detection, Staring arrays, Readout integrated circuits

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Proceedings Article | 13 August 1997 Paper

Two-stack two-color high-strain quantum well infrared photodetector

Meimei Tidrow, JungChi Chiang, Sheng Li, Kenneth Bacher

Proceedings Volume 3061, (1997) https://doi.org/10.1117/12.280397

KEYWORDS: Mid-IR, Long wavelength infrared, Quantum well infrared photodetectors, Indium, Gallium arsenide, Quantum wells, Absorption, Infrared radiation, Atmospheric sensing, Indium gallium arsenide

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Proceedings Article | 15 April 1997 Paper

Effect of compressive strain on the performance of p-type quantum well infrared photodetectors

Sheng Li, Jerome Chu

Proceedings Volume 2999, (1997) https://doi.org/10.1117/12.271183

KEYWORDS: Quantum well infrared photodetectors, Quantum wells, Long wavelength infrared, Absorption, Mid-IR, Quantum efficiency, Gallium arsenide, Sensors, Temperature metrology, Lithium

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Proceedings Article | 15 July 1994 Paper

Normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well infrared photodetector with background limited performance at 77 K

Sheng Li, Yanhua Wang, Jerome Chu, Pin Ho

Proceedings Volume 2225, (1994) https://doi.org/10.1117/12.179692

KEYWORDS: Quantum well infrared photodetectors, Quantum wells, Gallium, Aluminum, Photodetectors, Absorption

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Proceedings Article | 23 October 1992 Paper

Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection

Yen Tzeng, Sheng Li

Proceedings Volume 1813, (1992) https://doi.org/10.1117/12.131229

KEYWORDS: Gallium arsenide, PIN photodiodes, Photodiodes, Optoelectronic devices, Information operations, Sensors, Indium gallium arsenide, Diodes, Absorption, Capacitance

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Proceedings Article | 3 September 1992 Paper

Largely enhanced infrared absorption in a wide InAlAs/InGaAs quantum well and short-period superlattice barrier structure

Larry Yu, Sheng Li, Pin Ho

Proceedings Volume 1675, (1992) https://doi.org/10.1117/12.137615

KEYWORDS: Absorption, Quantum wells, Superlattices, Infrared radiation, Stereolithography, Physics, Long wavelength infrared, Heterojunctions, Absorbance, Integrated optics

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Proceedings Article | 1 September 1992 Paper

Novel grating-coupled step-bound-to-miniband transition InGaAs/GaAs/AlGaAs multiquantum well infrared photodetector

Larry Yu, Yanhua Wang, Sheng Li, Pin Ho

Proceedings Volume 1685, (1992) https://doi.org/10.1117/12.137800

KEYWORDS: Quantum wells, Superlattices, Metals, Infrared radiation, Infrared detectors, Gallium arsenide, Quantum well infrared photodetectors, Staring arrays, Photodetectors, Transition metals

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Proceedings Article | 1 February 1991 Paper

Novel high-speed dual-wavelength InAlAs/InGaAs graded superlattice Schottky barrier photodiode for 0.8- and 1.3-um detection

Kiu Hwang, Sheng Li, Yung Kao

Proceedings Volume 1371, (1991) https://doi.org/10.1117/12.24895

KEYWORDS: Photodiodes, Sensors, Superlattices, Indium gallium arsenide, Signal detection, Absorption, Photons, Analog electronics, Fiber optics, Gallium arsenide

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Showing 5 of 14 publications

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