Dry resist deposition and development technology is being adopted to break the tradeoffs among resolution, sensitivity, roughness, and defect performance to enable HVM for high NA EUV. Dry resist patterning performance at 0.33 NA EUV for pitch 24 nm dense line-space will be presented showing the readiness towards the high NA EUV patterning. By co-optimizing process parameters such as underlayer type, post exposure bake strategy, and dry development chemistry, dose to roughness and defectivity trade off can be overcome, leading to better roughness and defectivity without a compromise in dose. We examine small and large area defectivity post litho and post pattern transfer using CDSEM and broad band plasma (BBP) defectivity bright field inspection techniques to understand the effect of process parameters on bridge and break defects. Additionally, we explore how scaling underlayer thickness and stack configuration impacts the final pattern quality. Overall, this study emphasizes the importance of co-optimizing the process parameters to achieve the best results in dry resist patterning, especially as feature sizes shrink.
Extreme ultraviolet lithography (EUVL) with a NA of 0.33 has been part of high-volume manufacturing since 2019. To guarantee the downscaling of the technology node, advanced material and patterning becomes very critical in terms of resolution, roughness, defectivity and process window. Therefore, several entities are developing new resists and processes. However, to adopt new resist and process into the production, performing model based optical proximity correct (OPC) is an essential step. Thus, an accurate OPC model is required. In this paper, we investigate the calibre CM1 OPC model accuracy of dry resist process, which is conducted on N5 M2 design (pitch 32nm).
In this work, we aim to demonstrate the progress of dry resist development to address specific challenges of high NA EUV lithography. As features scales, resist thickness and interface between resist and underlayer play a crucial role. The co-optimization of underlayers with dry technology enables tuning of the patterning stack for optimal performance. Dry deposition of resists offers precise control over thickness and composition to improve material variability. Dry development reduces the likelihood of pattern collapse and enhances the ability to print features at higher aspect ratio. Defect characterization at pitch 28nm test vehicles at imec have been used to validate the material and process improvements in the dry resist program. Furthermore, dry resist patterning performance at pitch 24nm dense line-space and pitch 34nm hexagonal dense pillars and contact holes will be discussed showing the readiness towards the high NA EUV patterning.
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