To overcome the increased absorption of commercially available waveguide platforms for UV wavelengths, Al2O3 has been suggested due to its low losses below 450 nm. In this work, we demonstrate Al2O3 waveguides fabricated via reactive sputtering, electron beam lithography and dry etching with losses as low as 2.3 dB/cm at 369 nm. A variety of building blocks required for typical photonic devices are realized using the process which shows promise as a waveguide platform for applications that require UV wavelengths.
Hybrid integrated diode lasers offer a robust and small-sized solution for applications in telecommunications, quantum optics and metrology due to their wide tunability and ultra-narrow linewidth. Here, we present the fabrication, packaging and successful operation of the first fully integrated, aluminum oxide (Al2O3) based, hybrid diode laser operating at 405 nm. Low-loss, high-confinement waveguides are fabricated with a measured propagation loss of only 2.8 ± 0.3 dB/cm. The hybrid laser consists of a GaN SLED butt-coupled to an Al2O3 feedback circuit comprising of two microring resonators that form a frequency selective Vernier filter. The chip assembly is packaged in a hermetically sealed, butterfly housing for optimal performance and durability. The laser shows a maximum output power of 0.74 mW and is tunable over the entire gain bandwidth of 4.4 nm.
We present a low propagation loss aluminium oxide integrated photonics platform enabling applications with operation down to the UV wavelength range (i.e., <250 nm). Single mode fully etched waveguides were fabricated with losses below 2 dB/cm at 405 nm. The influence of waveguide dimensions on the propagation losses are presented, indicating that losses are sidewall roughness limited. Lower losses can be achieved by further optimization of the cross-section of the waveguides. In this presentation, the aluminium oxide platform will be introduced together with the characterization of the waveguides at near-UV wavelengths.
Photonic integrated circuits (PICs) have experienced an exponential growth in a number of applications, including telecom/datacom, LiDAR, optical sensing/metrology and quantum technology. Most materials and platforms commonly used in integrated photonics, such as silicon-on-insulator (SOI), silicon nitride (Si3N4) and indium phosphide (InP) do not show transmission below ~400 nm, hindering the development of PICs operating in the ultraviolet wavelength range. Furthermore, devices in this wavelength range also require fast modulation and switching in order to enable complex emerging applications. Aluminum nitride (AlN) is a material with a band gap of 6.2 eV, exhibiting a wide transparency window, from the ultraviolet to the mid-infrared. AlN has the capacity to achieve high electro-optic[1], non-linear[2] and piezo-electric[3,4] coefficients, which makes AlN an interesting material for PICs with operation down to the ultraviolet wavelength range. However, high losses have prevented PICs from benefiting from its excellent optical properties. In this work, we present our work on the sputter deposition of low-loss AlN slab waveguides. The optical performance of AlN sputtered slab waveguides after annealing at different temperatures and their relation with the film morphology will be discussed. Preliminary slab propagation losses as low as 1.5 dB/cm at 633 nm of wavelength have been demonstrated.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.