Ms. Soo Kyeong Jeong Profile

Soo Kyeong Jeong

Inventor at SK Hynix Inc

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Publications (4)

Proceedings Article | 8 November 2012 Paper

The plasma etching methods for minimizing mask CD variation by cleaning process

Hyun Shin, Soo Jeong, Ho Jung, Sang Kim, Dong Yim

Proceedings Volume 8522, 852215 (2012) https://doi.org/10.1117/12.964984

KEYWORDS: Plasma treatment, Oxygen, Etching, Critical dimension metrology, Chromium, Plasma etching, Molybdenum, Chlorine, Photomasks, Ions

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There has been a growing demand for more precise Mask CD MTT (Critical Dimension Mean to Target) control by shrinking the semiconductor device. Generally, The CD MTT is determined by patterning process such as writing, develop, and etch. But, additional CD MTT variation often occurs by cleaning process after patterning process. As a result, it is important to preserve the CD MTT for minimizing CD variation by cleaning process. The cleaning process of photomask is becoming more critical for 32nm node and below because the size of defect and SRAF pattern is in the same range. In order to achieve high first cleaning pass yields, intensive cleaning method depending on media not physical force is still essential to photomask manufacturing and these cleaning processes bring about considerable CD MTT change. Therefore, it is necessary to increase the durability of MoSi material of attenuated HTPSM (Half Tone Phase Shift Mask) by the new surface treatment method. In this study, we presented the plasma etching technique for Cr strip etch in the 2nd process of the attenuated HTPSM for minimizing CD variation by cleaning process. Diverse dry etching processes are investigated to improve the durability of the MoSi patterns. In order to evaluate the surface modification of the MoSi film, surface compositions are analyzed by XPS (X-ray Photoelectron Spectroscopy), TOF-SIMS (Time of Flight Secondary Ion Mass Spectrometry), and EELS (Electron Energy Loss Spectroscopy). The variation of CD MTT and optical properties are also evaluated by CD SEM and AIMS (Aerial Image Measurement System), respectively. The XPS analysis shows that sidewall passivation films are formed during the main etch process and then modified at the over etch step and additional in-situ O2 plasma treatment. The concentration of the MoO3 is increased when over etch step and in-situ O2 plasma treatment are added. The difference of CD shift between initial measurement and 2nd measurement after cleaning process depends on plasma etching conditions. Consequently, the increase in the peak intensity of MoO3 that is less soluble than that of MoO2 leads to preserve CD by cleaning chemicals.

Proceedings Article | 17 October 2008 Paper

Simulation analysis of backside defects printability in 193nm photolithography

Jisun Ryu, Dongwook Lee, Jinho Ryu, Sookyeong Jeong, SangPyo Kim, Changyeol Kim

Proceedings Volume 7122, 712218 (2008) https://doi.org/10.1117/12.801437

KEYWORDS: Photomasks, Semiconducting wafers, Optical lithography, Opacity, Fiber optic illuminators, Solids, Coherence (optics), Critical dimension metrology, Lithography, Printing

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Proceedings Article | 30 October 2007 Paper

Capability of eco-friendly cleaning strategy corresponding to advanced technology

Sookyeong Jeong, Dongwook Lee, Jisun Ryu, Jinho Ryu, Sangpyo Kim, Oscar Han

Proceedings Volume 6730, 673018 (2007) https://doi.org/10.1117/12.746782

KEYWORDS: Ultraviolet radiation, Air contamination, Particles, Photomasks, Ions, Chromium, Molecules, Metrology, Critical dimension metrology, Reflectivity

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Proceedings Article | 30 October 2007 Paper

The cleaning effects of mask aerial image after FIB repair in sub-80nm node

Hyemi Lee, Goomin Jeong, Sookyeong Jeong, Sangchul Kim, Oscar Han

Proceedings Volume 6730, 673022 (2007) https://doi.org/10.1117/12.746793

KEYWORDS: Critical dimension metrology, Photomasks, Image processing, Semiconducting wafers, Bridges, Scanners, Contamination, Manufacturing, Ions, Lithography

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