Mr. Thomas Aggerstam Profile

Thomas Aggerstam

at Mutual Benefits AB Engineering

SPIE Involvement:

Author

Proceedings Article | 26 November 2007 Paper

Intersubband photonic devices by group-III nitrides

P. Holmström, X. Liu, H. Uchida, T. Aggerstam, A. Kikuchi, K. Kishino, S. Lourdudoss, T. Andersson, L. Thylén

Proceedings Volume 6782, 67821N (2007) https://doi.org/10.1117/12.754372

KEYWORDS: Quantum wells, Gallium nitride, Absorption, Modulators, Aluminum nitride, Quantum well infrared photodetectors, Silicon, Waveguides, Switches, Terahertz radiation

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Proceedings Article | 21 February 2007 Paper

GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 µm intersubband absorption

T. Aggerstam, T. Andersson, P. Holmström, P. Jänes, X. Liu, S. Lourdudoss, L. Thylén

Proceedings Volume 6479, 64791E (2007) https://doi.org/10.1117/12.695457

KEYWORDS: Gallium nitride, Absorption, Quantum wells, Aluminum nitride, Sapphire, Modulators, FT-IR spectroscopy, Atomic force microscopy, Silicon, Solids

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Proceedings Article | 17 June 2003 Paper

1.3-um InGaAs(N)/GaAs vertical-cavity lasers

Sebastian Mogg, Petrus Sundgren, Carl Asplund, Mattias Hammar, Ulf Christiansson, Thomas Aggerstam, Vilhelm Oscarsson, Christine Runnstrom, Elsy Odling, Jessica Malmquist

Proceedings Volume 4994, (2003) https://doi.org/10.1117/12.482854

KEYWORDS: Quantum wells, Indium gallium arsenide, Semiconducting wafers, Continuous wave operation, Gallium arsenide, Indium, Measurement devices, Heatsinks, Epitaxy

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Proceedings Article | 15 April 2003 Paper

1300-nm GaAs-based vertical-cavity lasers

Mattias Hammar, Carl Asplund, Petrus Sundgren, Sebastian Mogg, Ulf Christiansson, Thomas Aggerstam, Vilhelm Oscarsson, Christine Runnstroem, Elsy Oedling, Jessica Malmquist

Proceedings Volume 4942, (2003) https://doi.org/10.1117/12.470815

KEYWORDS: Quantum wells, Indium gallium arsenide, Doping, Semiconducting wafers, Reflectivity, Gallium arsenide, Indium, Interfaces, Mirrors, Gallium

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Proceedings Article | 4 June 2002 Paper

Large aperture 850nm oxide-confined VCSELs for 10Gb/s data communication

Thomas Aggerstam, Rickard M. von Wurtemberg, Christine Runnstrom, Emmanuil Choumas

Proceedings Volume 4649, (2002) https://doi.org/10.1117/12.469244

KEYWORDS: Vertical cavity surface emitting lasers, Fiber lasers, Quantum wells, Modulation, Indium gallium arsenide, Gallium arsenide, Data communications, Semiconducting wafers, Data transmission, Oxides

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Proceedings Article | 21 May 2002 Paper

GaAs PIN photodetectors for 10 Gbit/s data communication

Lars Dillner, Roger Loow, Elsy Odling, Eva Backlin, Thomas Aggerstam

Proceedings Volume 4650, (2002) https://doi.org/10.1117/12.467664

KEYWORDS: Sensors, Capacitance, Gallium arsenide, Data communications, Resistance, Vertical cavity surface emitting lasers, Receivers, Eye, Photodetectors, Diffusion

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Proceedings Article | 4 May 2001 Paper

Quest for very high speed VCSELs: pitfalls and clues

Renaud Stevens, Richard Schatz, Anita Lovqvist, Thomas Aggerstam, Christina Carlsson, Carlos Angulo Barrios, Sebastian Lourdudoss, Marco Ghisoni

Proceedings Volume 4286, (2001) https://doi.org/10.1117/12.424792

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Thermal effects, Data modeling, Resistance, Calibration, Capacitance, Hole burning spectroscopy, Sensors, Oxidation

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Proceedings Article | 4 May 2001 Paper

Selectively oxidized vertical-cavity surface-emitting lasers for high-speed data communication

Thomas Aggerstam, Anita Loevqvist, Renaud Stevens, Stefan Jonsson, Rickard M. von Wuertemberg, Richard Schatz, Mardjan Dubois, Marco Ghisoni

Proceedings Volume 4286, (2001) https://doi.org/10.1117/12.424794

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Oxides, Data communications, Semiconducting wafers, Internet, Aluminum, Temperature metrology, Semiconductors, Oxidation

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Showing 5 of 8 publications

Conference Committee Involvement (3)

Vertical-Cavity Surface-Emitting Lasers IX

26 January 2005 | San Jose, California, United States

Vertical-Cavity Surface-Emitting Lasers VIII

28 January 2004 | San Jose, CA, United States

Vertical-Cavity Surface-Emitting Lasers VII

29 January 2003 | San Jose, CA, United States

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