In this paper we discuss how atomic force microscopy can be used to locally study polarization phenomena, elucidating the fundamental properties of ferroelectrics. By combining local probe switching, time dependent electric field microscopy and piezoelectric microscopy, it is possible to address the question of ferroelectricity in ultra thin films. Using these techniques e demonstrate that Pb(Zr0.2Ti0.8)O3 films are ferroelectric down to 40Å. We also discuss the use of the ferroelectric field effect to study switching in thin samples. Furthermore, by examining with a nanometer resolution the writing and reading of ferroelectric regions, the electric field dependence of the domain wall velocity can be quantified, demonstrating that ferroelectric domain wall motion is a creep process in thin films.
We report on ferroelectric field effect experiments in epitaxial oxide heterostructures consisting of the ferroelectric oxide Pb(Zr,Ti)O3 and the metallic oxides GdBa2Cu3O7 and SrRuO3. To perform the experiments, we used conventional capacitor structures, as well as a scanning probe approach that allows one to control the local ferroelectric polarization without the use of permanent electrical contacts. In the case of the scanning probe approach, nanometer scale control of the ferroelectric domain structure can be achieved over large areas of up to 2500 micrometer2. Nonvolatile, reversible electronic nanofeatures were written in Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures by switching the local polarization field of the ferroelectric layer, inducing a field effect in the thin (30 angstrom) SrRuO3 layer that changes its sheet resistance by 7%. This doping technique permits one to write reversible, nonvolatile electronic structures without requiring traditional lithographic processing or permanent electrical contacts.
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