Dr. Vincent Goiffon Profile

Dr. Vincent Goiffon

Ph.D. Student at ISAE

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Publications (5)

Proceedings Article | 13 June 2023 Presentation + Paper

Study of damages caused by proton irradiation on MCT n/p focal plane cooled arrays

Ségolène Dinand, Eric Deborniol, Nicolas Baier, Florent Rochette, Serena Rizzolo, Vincent Goiffon, Olivier Gravrand

Proceedings Volume 12534, 125340P (2023) https://doi.org/10.1117/12.2663763

KEYWORDS: Diodes, Dark current, Staring arrays, Mercury cadmium telluride, Activation energy, Temperature metrology, Silicon, Annealing, Readout integrated circuits, Interfaces

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Proceedings Article | 26 September 2013 Paper

Nuclear background effects on plasma diagnostics for megajoule class laser facility

A. Rousseau, S. Darbon, P. Paillet, S. Girard, J. L. Bourgade, M. Raine, O. Duhamel, V. Goiffon, P. Magnan, A. Chabane, P. Cervantes, M. Hamel, J. Larour

Proceedings Volume 8850, 885004 (2013) https://doi.org/10.1117/12.2024005

KEYWORDS: Relays, Glasses, X-rays, Mirrors, Charge-coupled devices, Ions, Plasma diagnostics, National Ignition Facility, Diagnostics, Multilayers

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Proceedings Article | 9 May 2012 Paper

Vulnerability of optical detection systems to megajoule class laser radiative environment

A. Rousseau, S. Darbon, S. Girard, P. Paillet, J. L. Bourgade, V. Goiffon, P. Magnan, V. Lalucaa, M. Hamel, J. Larour

Proceedings Volume 8439, 84391F (2012) https://doi.org/10.1117/12.921883

KEYWORDS: Diagnostics, Gamma radiation, Charge-coupled devices, Environmental sensing, Sensors, X-rays, Glasses, X-ray imaging, Imaging systems, Relays

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Proceedings Article | 14 October 2010 Paper

Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes

Vincent Goiffon, Cédric Virmontois, Pierre Magnan, Paola Cervantes, Franck Corbière, Magali Estribeau, Philippe Pinel

Proceedings Volume 7826, 78261S (2010) https://doi.org/10.1117/12.868443

KEYWORDS: Photodiodes, Sensors, Image processing, Copper indium disulfide, CMOS sensors, Manufacturing, Field effect transistors, Oxides, Silicon, CMOS technology

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Proceedings Article | 29 February 2008 Paper

Ionizing radiation effects on CMOS imagers manufactured in deep submicron process

Vincent Goiffon, Pierre Magnan, Frédéric Bernard, Guy Rolland, Olivier Saint-Pé, Nicolas Huger, Franck Corbière

Proceedings Volume 6816, 681607 (2008) https://doi.org/10.1117/12.767484

KEYWORDS: Photodiodes, Oxides, Field effect transistors, Transistors, Diodes, Sensors, Copper indium disulfide, CMOS sensors, Annealing, Ionizing radiation

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