Dr. Wei Li Profile

Dr. Wei Li

Senior Researcher at Tampere Univ

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Publications (6)

Proceedings Article | 7 March 2005 Paper

Superluminescent diodes at 1.55 um based on quantum-well and quantum-dot active regions

Wei Li, Risto Ronkko, Andreas Rydefalk, Pekka Poyhonen, Markus Pessa

Proceedings Volume 5739, (2005) https://doi.org/10.1117/12.590362

KEYWORDS: Indium arsenide, Quantum wells, Waveguides, Superluminescent diodes, Gallium arsenide, Modulation, Gallium, Continuous wave operation, Atomic force microscopy

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Proceedings Article | 1 September 2004 Paper

Characterization of 1550 nm Fabry-Perot laser structures for application as mode-locked pulse sources

Wei Li, Risto Ronkko, M. Peltola, A. Rydefalk, Markus Pessa, H. Scholl, S. Garidel, Kevin Williams, P. Moreno, H. Lamela, M. Cavallari

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.543908

KEYWORDS: Quantum wells, Mode locking, Pulsed laser operation, Semiconductor lasers, External quantum efficiency, Picosecond phenomena, Waveguide lasers, Fabry–Perot interferometers, Laser damage threshold, Waveguides

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Proceedings Article | 22 May 2002 Paper

Group III-arsenide-nitride quantum well structures on GaAs for laser diodes emitting at 1.3 um

Tomi Jouhti, Chang Peng, Emil-Mihai Pavelescu, Wei Li, Victor-Tapio Rangel-Kuoppa, Janne Konttinen, Pekka Laukkanen, Markus Pessa

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467963

KEYWORDS: Quantum wells, Gallium arsenide, Annealing, Nitrogen, Gallium, Atomic force microscopy, Luminescence, Indium, Semiconductor lasers, Crystals

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Proceedings Article | 22 May 2002 Paper

High-performance 1.32-um GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

Wei Li, Chang Peng, Tomi Jouhti, Janne Konttinen, Emil-Mihai Pavelescu, Mikko Suominen, Mihail Dumitrescu, Markus Pessa

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467961

KEYWORDS: Quantum wells, Molecular beam epitaxy, Laser damage threshold, Continuous wave operation, Pulsed laser operation, Diffusion, Oxides, Gallium arsenide, Temperature metrology, Luminescence

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Proceedings Article | 21 May 2002 Paper

Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy

Wei Li, Markus Pessa, Tommy Ahlgren, James Dekker

Proceedings Volume 4650, (2002) https://doi.org/10.1117/12.467665

KEYWORDS: Nitrogen, Gallium, Annealing, Luminescence, Gallium arsenide, Ions, Molecular beam epitaxy, Chemical species, Arsenic, Backscatter

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Proceedings Article | 24 September 1996 Paper

Visible photo- and electro-luminescence from laser-crystallized a-Si:H and its based multilayers

Kun-Ji Chen, Wei Wu, Xinfan Huang, Zhifeng Li, Mingxiang Wang, Jun Xu, Wei Li, Duan Feng

Proceedings Volume 2886, (1996) https://doi.org/10.1117/12.251893

KEYWORDS: Crystals, Laser crystals, Multilayers, Silicon, Electroluminescence, Excimer lasers, Semiconductor lasers, Pulsed laser operation, Signal processing, Laser energy

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Showing 5 of 6 publications

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