Digital projector is a main component in Fringe projection profilometry (FPP). To acquire precise 3D profiles, it is crucial to accurately calibrate and compensate projector distortion. In this paper, we propose a new method to improve the accuracy of projector compensation. Coefficients of projector distortion are first accurately calibrated. And based on the calibration results, non-uniform fringe patterns are designed to compensate the projector distortion. With the non-uniform fringe patterns, phase errors in absolute phase map can be automatically and effectively offset. Experimental results are shown to demonstrate the validity of the proposed method.
The simulation of remote sensing images is a useful tool for a variety of tasks, such as the definition of future Earth
Observation systems, the optimization and evaluation of instrument specifications, especially for a new type sensor, and
the development and validation of data processing algorithms. A scene simulator for optical hyperspectral data from
'HJ1A-HSI' is described in this paper. 'HJ1A-HSI' was carried on the Chinese small satellite HJ-1A, which was
successfully launched on September 6th, 2008. Different from common hyperspectral sensor, 'HJ1A-HSI' belongs to the
spatial imaging Fourier Transform spectrometer (IFTS). In contrast to the high-speed development of spatial IFTS, the
corresponding image simulator is still at the starting stage and the simulation data is very ideal in most cases. To
simulate more actual data, a simulation system is proposed in this paper, based on the analysis of spatial IFTS principle.
This system puts emphasis on simulating the effects of typical artifacts, and consists of four parts: the calculation of
input parameter, the radiance computation for one beam before interfered, the simulation of effects of typical artifacts
and the interferogram acquisition. The methodology applied to the complete scene simulation and some sample results
are presented and analyzed in this paper.
KEYWORDS: Silicon, Sensors, Chemical lasers, Chemical vapor deposition, Thin films, Liquid crystal on silicon, Semiconductor lasers, Temperature metrology, Ruthenium, Silicon films
The authors fabricated a polycrystalline Si thin film from SiH4 on SiO2 substrates with pulsed KrF laser irradiation (248 nm or 5 eV, peak energy densities of 50 mJcm-2, repetition rates 0.003 - 10 Hz) at temperature Ts 570 degree(s)C. The thickness of the film was about 1.5 micrometers . The deposited rates were estimated about 300 A/min. The resistivity was over 106 (Omega) cm. Film growth on SiO2 substrates at Ts equals 570 degree(s)C were polycrystalline Si as judged by both x-ray diffraction and SEM. Polycrystalline orientations were <111> and <211>, respectively. The film had average grain sizes of 0.5 micrometers with a <111> preferred orientation. A pressure sensor with the polycrystalline Si film was fabricated by laser chemical vapor deposition. The sensor has good linearity and operation temperature range from -60 degree(s)C to 200 degree(s)C. The sensitivity was 10 mv/Vbar.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.