In any sensing application, the most universal performance parameter is the signal-to-noise ratio (SNR). Over time, application needs push high-performance thermal imagers toward their ultimate SNR limit – background limited performance (BLIP) – the best any imager can do. BLIP SNR is determined by random shot noise inherent in the scene itself. The noise (and thus the SNR) magnitude is the square root of the number of signal photons collected, requiring the best sensors to collect all available scene light and add no additional noise. Quantum photodiodes made from infrared semiconductors have proved to be the highest sensitivity thermal detectors, but their dark currents (which add noise but no signal) increase exponentially with temperature and so still require significant cooling to attain BLIP.
Recent breakthrough results from Teledyne show that HgCdTe can attain much lower dark currents than previously reported leading to higher BLIP operating temperatures and approaching fundamental limits. This talk will focus on HgCdTe photodiodes which have the best demonstrated performance to date for devices either fielded or in development and will compare these devices to other semiconductors past, present, and (likely) future.
Infrared (IR) photon detectors must be cryogenically cooled to provide the highest possible performance, usually
to temperatures at or below ~ 150K. Such low operating temperatures (Top) impose very stringent requirements
on cryogenic coolers. As such, there is a constant push in the industry to engineer new detector architectures
that operate at higher temperatures, so called higher operating temperature (HOT) detectors. The ultimate
goal for HOT detectors is room temperature operation. While this is not currently possibly for photon detectors,
significant increases in Top are nonetheless beneficial in terms of reduced size, weight, power and cost (SWAP-C).
The most common HgCdTe IR detector architecture is the P+n heterostructure photodiode (where a capital letter
indicates a wide band gap relative to the active layer or “AL”). A variant of this architecture, the P+N−n−N−N
heterostructure photodiode, should have a near identical photo-response to the P+n heterostructure, but with
significantly lower dark diffusion current. The P+N−n−N−N heterostructure utilizes a very low doped AL,
surrounded on both sides by wide-gap layers. The low doping in the AL, allows the AL to be fully depleted,
which drastically reduces the Auger recombination rate in that layer. Minimizing the Auger recombination rate
reduces the intrinsic dark diffusion current, thereby increasing Top. Note when we use the term “recombination
rate” for photodiodes, we are actually referring to the net generation and recombination of minority carriers
(and corresponding dark currents) by the Auger process. For these benefits to be realized, these devices must
be intrinsically limited and well passivated. The focus of this proceeding is on studying the fundamental physics
of the intrinsic dark currents in ideal P+N−n−N−N heterostructures, namely Auger recombination. Due to
the complexity of these devices, specifically the presence of multiple heterojunctions, numerical device modeling
techniques must be utilized to predict and understand the device operation, as analytical models do not exist
for heterojunction devices.
Yibin Bai, William Tennant, Selmer Anglin, Andre Wong, Mark Farris, Min Xu, Eric Holland, Donald Cooper, Joseph Hosack, Kenneth Ho, Thomas Sprafke, Robert Kopp, Brian Starr, Richard Blank, James Beletic, Gerard Luppino
Teledyne’s silicon hybrid CMOS focal plane array technology has matured into a viable, high performance and high-
TRL alternative to scientific CCD sensors for space-based applications in the UV-visible-NIR wavelengths. This paper
presents the latest results from Teledyne’s low noise silicon hybrid CMOS visible focal place array produced in 4K×4K format with 10 μm pixel pitch. The H4RG-10 readout circuit retains all of the CMOS functionality (windowing, guide
mode, reference pixels) and heritage of its highly successful predecessor (H2RG) developed for JWST, with additional
features for improved performance. Combined with a silicon PIN detector layer, this technology is termed HyViSI™
(Hybrid Visible Silicon Imager). H4RG-10 HyViSI™ arrays achieve high pixel interconnectivity (<99.99%), low
readout noise (<10 e- rms single CDS), low dark current (<0.5 e-/pixel/s at 193K), high quantum efficiency (<90%
broadband), and large dynamic range (<13 bits). Pixel crosstalk and interpixel capacitance (IPC) have been predicted
using detailed models of the hybrid structure and these predictions have been confirmed by measurements with Fe-55 Xray
events and the single pixel reset technique. For a 100-micron thick detector, IPC of less than 3% and total pixel
crosstalk of less than 7% have been achieved for the HyViSI™ H4RG-10. The H4RG-10 array is mounted on a
lightweight silicon carbide (SiC) package and has been qualified to Technology Readiness Level 6 (TRL-6). As part of
space qualification, the HyViSI™ H4RG-10 array passed radiation testing for low earth orbit (LEO) environment.
We discuss the current performance of long-wavelength infrared photodetectors based on type-II superlattices, and the projected characteristics for diffusion-limited operation. For optimized architectures such as graded-gap and abrupt-heterojunction designs, the dark currents are strongly dominated by Shockley-Read (SR) rather than Auger processes. A factor of 10 improvement over the demonstrated SR lifetimes would lead to a factor of 4 lower dark current than state-of-the-art HgCdTe devices.
Type-II strained layer superlattices (SLS) are a rapidly maturing technology for infrared imaging applications,
with performance approaching that of HgCdTe1,2,3,4. Teledyne Imaging Sensors (TIS), in partnership with the
Naval Research Laboratory (NRL), has recently demonstrated state-of-the-art, LWIR, SLS 256 × 256 focal
plane arrays (FPAs) with cutoff wavelengths ranging from 9.4 to 11.5 μm. The dark current performance of
these arrays is within a factor of 10-20 of (state-of-the-art) HgCdTe. Dark current characteristics of
unpassivated and passivated devices exhibit bulk-limited behavior, essential for FPA applications. TIS has
also demonstrated rapid substrate thinning processes for increased infrared transmission through the GaSb
substrate. In addition to this work, this presentation will discuss the recent developments of 1K x 1K LWIR
SLS FPAs.
Arrays of independently tunable MEMS Fabry-Perot filters have been developed that enable spectral tuning over the
range of 11 - 8 microns with a filter bandwidth of ~ 120 nm. Actuation is provided using a MEMS driver IC that is
hybridized to the MEMS chip. Combining the filter array with an IR FPA enables spatially-resolved spectral tuning in a
compact architecture. Tunable spectral response data from the first integrated tunable filter / FPA device are presented.
Since the late '60's Teledyne Imaging Sensors (TIS-formerly Rockwell Science Center) has developed IR
sensor technology and produced IR sensors for both military and commercial applications. In the late '70's,
after excursions into the Pb-salts and InAsSb alloys, TIS began to study HgCdTe and has pursued this
materials system aggressively ever since. Beginning with Te-corner liquid phase epitaxy (LPE) by dipping,
tipping, and sliding, Teledyne migrated through metal organic chemical vapor deposition (MOCVD)-a
very challenging growth technique-to molecular beam epitaxy (MBE), where we have found a reliable
and flexible technique suited to the most advanced architectures. We used substrates from Cd(Zn)Te to
sapphire, GaAs, and silicon. Ion implantation and planar diode architectures have allowed high density
device geometries exploited in our double layer planar heterostructure (DLPH) single color diodes and our
simultaneous multispectral integrated technology (SUMIT) two color diodes. The performance of these
devices equals or exceeds that of all baseline MCT devices reported by other techniques. These devices
have dark currents that are readily characterized over 13 orders of magnitude by a simple heuristic, "Rule
07," for a wide range of temperature and wavelength.
Teledyne Imaging Sensors develops and produces high performance infrared sensors, electronics and packaging for
astronomy and civil space. These IR sensors are hybrid CMOS arrays, with HgCdTe used for light detection and a
silicon integrated circuit for signal readout. Teledyne manufactures IR sensors in a variety of sizes and formats.
Currently, the most advanced sensors are based on the Hawaii-2RG (H2RG), 2K×2K array with 18 μm pixel pitch. The
HgCdTe detector achieves very low dark current (<0.01 e-/pixel/sec) and high quantum efficiency (80-90%) over a wide
bandpass. Substrate-removed HgCdTe can simultaneously detect visible and infrared light, enabling spectrographs to
use a single focal plane array (FPA) for Visible-IR sensitivity. The SIDECARTM ASIC provides focal plane electronics
on a chip, operating in cryogenic environments with very low power (<11 mW). The H2RG and SIDECARTM have been
qualified to NASA Technology Readiness Level 6 (TRL-6). Teledyne continues to advance the state-of-the-art and is
producing a high speed, low noise array designed for IR wavefront sensing. Teledyne is also developing a 4K×4K, 15
µm pixel infrared array that will be a cost effective module for the large focal planes of the Extremely Large Telescopes
and future generation space astronomy missions.
A High Resolution Near-Infrared (NIR) Camera has been developed and tested. This NIR camera uses a HgCdTe detector array which allows for imaging at high operating temperatures. The camera's format is 640x512 pixels with an 18 μm pitch. We have obtained high broadband spectral response from 0.9 to 2.0 micron with near 100% optical fill factor. The camera is designed as a turnkey system that uses the industry standard Camera Link digital interface. The electronics are located remotely from the sensor head allowing it to be adapted to existing optical systems. This compact camera has been targeted for military, scientific and telecommunication applications. This paper will detail the measured camera performance.
We are developing a novel 2D focal plane array (FPA) with read-out integrated circuit (ROIC) on a single chip for 3D laser radar imaging. The ladar will provide high-resolution range and range-resolved intensity images for detection and identification of difficult targets. The initial full imaging-camera-on-a-chip system will be a 64 by 64 element, 100-micrometers pixel-size detector array that is directly bump bonded to a low-noise 64 by 64 array silicon CMOS-based ROIC. The architecture is scalable to 256 by 256 or higher arrays depending on the system application. The system will provide all the required electronic processing at pixel level and the smart FPA enables directly producing the 3D or 4D format data to be captured with a single laser pulse. The detector arrays are made of uncooled InGaAs PIN device for SWIR imaging at 1.5 micrometers wavelength and cooled HgCdTe PIN device for MWIR imaging at 3.8 micrometers wavelength. We are also investigating concepts using multi-color detector arrays for simultaneous imaging at multiple wavelengths that would provide additional spectral dimension capability for enhanced detection and identification of deep-hide targets. The system is suited for flash ladar imaging, for combat identification of ground targets from airborne platforms, flash-ladar imaging seekers, and autonomous robotic/automotive vehicle navigation and collision avoidance applications.
Continuing advances in CMOS technology including finer lithography, the addition of dense planarized interconnect layers, concomitant improvements in transistor performance, and the availability of design tools that facilitate large- scale circuit integration, are now enabling the development of systems on a chip. While the first such imaging systems- on-a-chip supported detection of radiation at visible wavelengths, recent imaging systems-on-a-chip extend into the infrared. The result is high-performance infrared FPAs with high functionality. We report our progress at Rockwell Science Center in exploiting submicron CMOS to produce such infrared imaging systems-on-a-chip while overcoming accompanying challenges such as lower operating voltage. Our goal is to develop third-generation infrared imagers with compelling performance and functionality advantages that not only provide high sensitivity and resolution, but also facilitate on-demand sensor selection to adeptly match each mission without need for extensive support logistics including extensive cooling and elaborate camera electronics.
Short wavelength, middle wavelength, mid-long wavelength, long wavelength, and very long wavelength focal plane arrays (FPAs) are required for remote sensing applications. Advances in the Molecular Beam Epitaxy (MBE) growth of Mercury Cadmium Telluride (HgCdTe) and detector architectures utilized, have resulted in high performance detectors being fabricated in the 1 micrometers to 16 micrometers spectral range Custom Read Out Integrated Circuits (ROICs) are designed and fabricated to interface the HgCdTe detector arrays. The hybrid focal pane array is made up of the HgCdTe detector array and the CMOS-based ROIC. Hybrid FPAs performance parameters are presented. The HgCdTe detector material is used are grown by MBE on lattice matched CdZnTe substrates. Custom ROICs are fabricated in a commercial CMOS foundry. FPA D* performance values have been obtained for a multitude of spectral ranges and configurations that include; (i) (lambda) c equals 1.8 micrometers , 12 X 256 arrays operating at 295 K with median D* approximately 1.4 X 1012 cm Hz1/2/W, (ii) (lambda) c equals 10.5 micrometers , 256 X 256 arrays operating at 85 K with medina D* equals 3.9 X 1011 cm Hz1/2/W at a background flux (phi) b equals 7.82 X 1015 ph/cm2-2 and (iii) (lambda) c equals 15.8 micrometers at 65K, 128 X 128 array operating at 40K with peak D* of 2.76 X 1011 cm Hz1/2/W at a background flux (phi) b equals 8.0 X 1015 ph/cm2- s. The performance of these FPAs will be presented.
Infrared (IR) remote sensing imaging applications require high-performance Focal Plane Arrays (FPAs) operating in all ranges of the IR spectrum. Short wavelength (SWIR; 1 to 3 micrometer), middle wavelength (MWIR; 3 to 5 micrometer), mid- long wavelength (MLWIR; 6 to 8 micrometer), long wavelength (LWIR; 8 to 14 micrometer), and very long wavelength (VLWIR; greater than 14 micrometer). These diverse spectral bands require high performance detectors and Read Out Integrated Circuits (ROICs) to perform the multi-spectral mission requirements. Significant progress in the design and fabrication of HgCdTe detector arrays and Read Out Integrated Circuits (ROICs) over the past few years has led to the demonstration of high resolution, low noise and large format reliable FPAs. Hybrid FPAs have been measured and their performance parameters are presented. Focal Plane Array D* performance values have been obtained for a multitude of spectral ranges and configurations that include; (1) (lambda) c equals 1.8 micrometer, 12 X 256 arrays operating at 295 K with median D* approximately 1.4 X 1012 cm Hz1/2/W, (2) (lambda) c equals 2.4 micrometer, 12 X 256 arrays operating at 250 K with median D* equals 1.6 X 1012 cm Hz1/2/W, detectors used are grown by MBE on lattice matched CdZnTe, (3) PACE-1 detectors with (lambda) c equals 2.5 micrometer, 1024 X 1024 arrays operating at 115 K with peak D* of 2.3 X 1013 cm Hz1/2/W at a background flux (phi) b equals 1.2 X 1011 ph/cm2- s, (4) MBE HgCdTe on Silicon MWIR detectors have been fabricated and the detector RoA performance for (lambda) co approximately 5.0 micrometer is in the 106 to 107 ohm-cm2 range at 78 K. (5) MBE HgCdTe on CdZnTe detectors, ((lambda) c equals 15.8 micrometer at 65 K), 128 X 128 array operating at 40 K with peak D* of 2.76 X 1011 cm Hz1/2/W at a background flux (phi) b equals 8.0 X 1015 ph/cm2-s. High performance 640 X 480 arrays imaging in the MWIR band have been fabricated on CdZnTe and PACE-1 substrates. The performance of these and additional FPAs will be presented.
Arvind D'Souza, Larry Dawson, Eric Anderson, Arvel Markum, William Tennant, Lucia Bubulac, Majid Zandian, John Pasko, William McLevige, Dennis Edwall, Jeffrey Derr, John Jandik
Remote sensing applications including the National Polar Orbiting Environmental Satellite System (NPOESS) require imaging in a multitude of infrared spectral bands, ranging from the 1.58 micrometer to 1.64 micrometer VSWIR band to the 11.5 micrometer to 12.5 micrometer LWIR band and beyond. These diverse spectral bands require high performance detectors, operating over a range of temperatures; room temperature for the VSWIR band 100 K for MWIR, LWIR and VLWIR, these needs can all be met using molecular beam epitaxy (MBE) to grow HgCdTe. The flexibility inherent in the MBE growth technology is its ability to vary the HgCdTe material's bandgap within a growth run and from growth run to growth run, a capability necessary for remote sensing applications that require imaging in a wide variety of spectral bands. This bandgap engineering flexibility also permits tailoring the device architecture to the various specific system requirements. This paper combines measured detector optical and electrical data, with noise model estimates of ROIC performance to calculate signal to noise ratio (SNR), D* or noise equivalent temperature difference (NE(Delta) T), for each spectral band. The SNR, D* and/or NE(Delta) T are calculated with respect to system focal plane specifications, as required for the meteorological NPOESS.
The ability to hybridize various detector arrays in disparate technologies to an assortment of state-of-the-art silicon readouts has enabled direct comparison of key IR detector technologies including photovoltaic (PV) HgCdTe/Al2O3, PV HgCdTe/CdZnTe, PV InGaAs/InP, and the photoconductive (PC) GaAs/AlGaAs quantum well IR photodetector (QWIP). The staring focal plane arrays range in size from 64 X 64 to 1024 X 1024; we compare these IR detector technologies versus operating temperature and background flux via hybrid FPA test at operating temperatures from 32.5 K to room temperature and photon backgrounds from mid-105 to approximately equals 1017 photons/cm2-s. Several state-of-the-art IR FPAs are included: a 1.7 micrometers 128 X 128 InGaAs hybrid FPA with room temperature D of 1.5 X 1013 cm-Hz1/2/W and 195K D of 1.1 X 1015 cm-Hz1/2/W; a 3.2 micrometers 1024 X 1024 FPA for surveillance; a 4.6 micrometers 256 X 256 HgCdTe/Al2O3 FPA for imaging with BLIP NE(Delta) T of 2.8 mK at 95K; and a 9 micrometers 128 X 128 GaAs QWIP with 32.5 K D > 1014 cm-Hz1/2/W at 32.5K and 8 X 1010 cm-Hz1/2W at 62K.
M. Edward Motamedi, William Tennant, Haluk Sankur, Robert Melendes, Natalie Gluck, Sangtae Park, Jose Arias, Jagmohan Bajaj, John Pasko, William McLevige, Majid Zandian, Randolph Hall, Karla Steckbauer, Patti Richardson
We report significant improvements in the performance of short wavelength infrared 128 X 128 focal plane arrays at room temperature. Using InGaAs and HgCdTe detector materials coupled to readout multiplexers having gate modulated detector interface, sensitivity that is near the theoretical detector-limited levels has been achieved via both low detector dark current and self-adjusting readout current gain. Extrapolating to nocturnal imaging conditions, the uncooled FPA-level sensitivities of 1.68 micrometers InGaAs and 1.86 micrometers HgCdTe arrays are shown to be within 35% and 80% of theoretical, respectively.
Fabrication of refractive microlens arrays on several infrared (IR) transmissive materials was studied. The fabrication process consists of forming photoresist microlenses by thermal reflow of photoresist islands, and transferring this pattern into the IR substrate by ion milling. Microlens arrays having a wide range of F-numbers (F/0.3 - F/12) and sizes were fabricated using a modified ion milling process, where background oxygen and ion energy were used to control the photoresist and substrate erosion rates, respectively. This approach enabled a large range of milling selectivity (e.g. 0.6 - 12 for CdTe) and hence accurate control of lens sag heights. This is important since photoresist microlenses can be successfully fabricated only within a limited range of F-numbers. The etch selectivity also enabled fabrication of nonspherical shapes, starting from spherical photoresist preforms, by judicious control of sputter selectivity during the milling process. Microlens arrays were fabricated in several IR materials, including CdTe, ZnS, Ge, Si, GaAs, InP, GaP and Al2O3. Among these materials GaP and ZnS are also attractive visible and near IR wavelength microlens materials, where their high refractive index results in much lower sag heights than quartz lenses of comparable F-number.
M. Edward Motamedi, William Tennant, Robert Melendes, Natalie Gluck, Sangtae Park, Jose Arias, Jagmohan Bajaj, John Pasko, William McLevige, Majid Zandian, Randolph Hall, Karla Steckbauer, Patti Richardson, Donald Cooper
The relatively large detector size of conventional focal plane arrays often acts as a limiting source of noise currents and requires these devices to run at undesirably low temperatures. To reduce the detector size without reducing the detector's quantum efficiency, we have developed efficient on-focal plane collection optics consisting of arrays of thin film binary optic microlenses on the back surface of hybrid detector array structures. P/n polarity photodiodes of an unusual `planar-mesa' geometry were fabricated in epitaxial HgCdTe deposited by molecular beam epitaxy on the `front' side of a CdZnTe substrate. Diffractive (8 - 16 phase level) Ge microlenses were deposited on 48 micrometers centers in a registered fashion (using an IR mask aligner and appropriate marks on the front surface of the CdZnTe) on the back side of the substrate using a lifting process. The lifting process circumvents some of the process limitations of the more conventional chemical etching method to diffractive microlens processing, allowing them to approach more closely their theoretical efficiency limit of > 95%. Prior to microlens deposition, but after diode fabrication, the test structures were flip- chip bonded or `hybridized' using indium interconnections to metallic strip lines which had been photolithographically deposited on sapphire dice (a process equally compatible with a silicon integrated circuit readout). After hybridization, the CdZnTe was thinned to equal the focal length of the lenses in the CdZnTe material. Optical characterization has demonstrated that the microlenses combined with the detector mesas concentrate light sufficiently to increase the effective collection area. The optical size of the mesa detectors being larger than the theoretical diffraction limit of the microlenses precludes determining whether the lenses themselves produce the theoretical diffraction-limited gain, but they clearly decrease required detector area by at least 3 - 6X. To our knowledge, this is the first successful demonstration of IR detectors and binary optics microlens integration.
We compare several key infrared detector technologies versus operating temperature and background flux via hybrid FPA test at operating temperatures from 32.5 K to room temperature and photon backgrounds from mid-105 to approximately equal to 1017 photons/cm2-sec. The detector materials include photovoltaic (PV) HgCdTe/Al2O3, PV HgCdTe/CdZnTe, photoconductive (PC) GaAs/AlGaAs quantum well infrared photodetector (QWIP) and PV InGaAs/InP; the device sizes range from 64 multiplied by 64 to 1024 multiplied by 1024.
Extensive material and device statistics of performance and reproducibility are presented to show the maturity of this technology. The demonstration vehicles to monitor yields during this demonstration were long-wavelength infrared (LWIR) HgCdTe multilayer wafers with 128 X 128 detector arrays. The heterostructure photodetectors were of the p-on-n planar configuration. Device data show that MBE LWIR diode test structures have performance that equals that of p-on-n double heterostructure photodiodes made by LPE. Due to the special attention given to understanding and reducing epilayer growth-induced defects, we have achieved improvements in FPA operability values from 92% to 98%. These improvements have resulted in the demonstration of a 128 X 128 FPA hybrid that had detectivity (D*) background limited performance when operating at 80 K in a tactical background environment. Mean D* was 1.28 X 1011 cmHz1/2/W. The corresponding mean NE(Delta) T was an excellent 5.9 mK.
In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out by growing material for operation in the following cut-off wavelength ((lambda) co) ranges of interest: LWIR [(lambda) co(77 K) equals 9-11 micrometers ], MLWIR [(lambda) co(77 K) equals 6-7 micrometers ], and VLWIR [(lambda) co(40 K) equals 20 micrometers ]. Detailed analyses of the current-voltage characteristics of these diodes as a function of temperature show that their dark currents are diffusion-limited down to 80 K, 50 K, and 30 K for the MLWIR, LWIR, and VLWIR photodiodes, respectively. In general, the RoA device values were uniform for the three band gap ranges when operating under diffusion limited conditions. The planar MBE HgCdTe technology has been further validated with the successful fabrication and operation of 64 X 64 hybrid FPAs.
Cost-effective high-performance IR imaging cameras need affordable staring focal plane arrays (FPAs) that can operate effectively at temperatures compatible with inexpensive long-life coolers. We report on staring hybrid 128 x 128 and 256 x 256 Hg1-xCdxTe FPAs that have requisite yield, sensitivity, operability, and reliability at a medium-wavelength IR (MWIR) cutoff wavelength (λc ~4.6 μm at 180 K) and elevated operating temperatures. Mean 256 x 256 FPA noise-equivalent temperature differences (NEΔT) using broadband f/1.7 optics were 4.3, 7.7, and 55 mK at 120, 140, and 180 K, respectively. We extrapolate that camera NEΔT ≤ 0.02 K can be achieved at 190 K using optimized (λc of ~4.4 μm (180 K), a 3.4- to 4.2-μm bandpass filter, and f/1 optics. Because the CMOS multiplexers have a low-power dissipation and need little ancillary circuitry in the dewar, a viable thermoelectrically-cooled FPA technology is thus implied once the λc is optimized for MWIR imaging.
A high-performance 5-μm 640 X 480 HgCdTe/CdTe/Al2O3 infrared focal plane array (FPA) that offers full TV-compatible resolution with excellent sensitivity at temperatures below 120 K has been developed. Mean FPA D* at 95 K and background of 1014 photons/cm2 s is background-limited at ~1 x 1012 cm Hz1/2/W for the typical mean quantum efficiency of 60 to 70%. The key technology making this large, high-sensitivity device producible is the epitaxial growth of HgCdTe on a rugged CdTe-buffered sapphire substrate. Mean camera noise-equivalent temperature difference NEΔT of 13 mK has been achieved at ≤ 120 K operating temperature and 3.4- to 4.2-μm passband; this is about an order of magnitude better than similar currently available cameras, which use PtSi FPAs and require cooling to ≤ 77 K to maintain performance at low scene temperatures.
A hybrid HgCdTe 640 X 480 infrared (IR) focal plane array (FPA) that meets the sensitivity, resolution, and field-of-view requirements of high-performance medium wavelength infrared (MWIR) imaging systems has been developed. The key technology making this large, high sensitivity device producible is the epitaxial growth of HgCdTe on a CdTe-buffered, sapphire substrate (referred to as PACE, for Producible Alternative to CdTe for Epitaxy; PACE-I refers to sapphire). The device offers TV resolution with excellent sensitivity at temperatures below 120 K. Mean NE(Delta) T as low as 13 mK has been achieved at operating temperatures < 130 K, which is about an order of magnitude better than has been achieved with PtSi 640 X 480 FPAs. In addition, the latter require cooling to <EQ 77 K. Mean PACE-I FPA D* at 78 K and background of 1014 photons/cm2-sec is BLIP-limited at 1 X 1012 cm-Hz1/2/W for the typical mean quantum efficiency of 60 - 70%. Imagery having excellent quality has been obtained using simple two-point nonuniformity compensation.
Staring 128 X 128 hybrid HgCdTe FPAs have been demonstrated with very good sensitivity and operability at temperatures compatible with thermoelectric cooling (> 160 K). The FPAs consist of HgCdTe/sapphire (PACE-I; producible alternative to CdTe for epitaxy) detector arrays hybridized to a CMOS readout having a gate modulation input circuit. FPAs with SWIR (2.5 micrometers at 78 K) and MWIR (4.56 micrometers at 180 K) cutoff wavelengths ((lambda) co) were made and evaluated. The SWIR arrays were ZnS passivated; the MWIR arrays were CdTe-passivated. Though the (lambda) co of the MWIR devices was not specifically optimized for terrestrial imaging at TE-cooled temperatures in the preferred 3.4 to 4.1 micrometers band, very good sensitivity was achieved, particularly relative to other technologies at temperatures >= 120 K. Mean laboratory noise equivalent temperature differences (NE(Delta) T) at 120 K, 170 K, and 180 K were 0.0048 K, 0.053 K, and 0.061 K respectively, for the MWIR device. While the NE(Delta) T was measured without a spectral filter, the sensitivity for 3.4 to 4.1 micrometers bandpass extrapolates to camera NE(Delta) T <EQ 0.05 K, if f/1.5 or faster optics are used. Near BLIP Detectivity (D*) of 1.62 X 1013 cm-Hz1/2/W and mean NE(Delta) T of 0.04 K were measured on the SWIR hybrid at 22.5 msec integration time and operating temperatures <EQ 162 K. Imagery of corresponding quality was subsequently generated. Since the CMOS multiplexer dissipates little power and needs a minimum of support circuitry, a viable thermoelectrically cooled FPA technology is implied.
PACE-I HgCdTe, an industry-leading intrinsic detector technology for developing large, high performance IR focal plane arrays (IRFPAs) in the MWIR (3-5 microns) spectral band, is reviewed. Emphasis is placed on hybrid HgCdTe 256 x 256 IRFPAs and the status of 640 x 480 hybrid HgCdTe FPA.
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