Perhaps the most challenging level to print moving beyond 65 nm node for logic devices is contact hole. Achieving dense to isolated pitches simultaneously in a single mask print requires high NA with novel low-k1 imaging techniques. In order to achieve the desired dense resolution, off axis illumination (OAI) techniques such as annular and quasar are necessary. This also requires incorporation of sub-resolution assist features for improved semidense to isolated contact margin. We have previously discussed design related issues revolving around asymmetric contact hole printing and misplacement associated with using extreme off axis illumination (OAI). While these techniques offer the appropriate dense margin needed, there are regions of severe asymmetric printing which are unsolvable using optical proximity correction (OPC). These regions are impossible to avoid unless design rule restrictions or new illumination schemes are implemented. We continue this work with discussions revolved around illumination choices for alleviating these regions without losing too much dense margin.
Pat Watson, Joseph Garofalo, M. Hansen, Ilya Grodnensky, Ludwik Zych, R. Takahashi, Willie Yarbrough, Edward Ehrlacher, A. Reim, R. Vella, A. Dunbar, Albert Colina, B. Herrero, D. Castro
The feasibility of manufacturing 280 nm gates for ASIC technology using i-line lithography is examined. Off-axis illumination, sub-resolution assist features and proximity effect bias corrections were considered. The experiments were performed with a reticle designed to evaluate the effects of line pitch, bias and field uniformity on the feature dimensions. Results show that dense and isolated features were found to print at about the same linewidth under all three illumination conditions. However, deviations as large as 40 nm were found at intermediate pitches, implying that some form of optical proximity correction is needed to maintain critical dimension (CD) control for a mask pattern with varying feature densities. Sub-resolution assist lines adjacent to isolated 280 nm lines significantly improved the apparent wall angle of the features compared to true isolated features. The use of these features comes at a cost; the sub-resolution features can be printed under certain conditions and could possibly lead to device failure. Multi-dimensional matrices of CD measurements with varying dose, focus, bias and pitch, when displayed in an appropriate manner, are being used to identify the relative advantages of different illumination conditions. Off-axis illumination offers a large depth of focus for all pitches if proximity effect biasing is applied. Conventional illumination with biasing can improve exposure latitude.
When considering optical lithography, there is no true substitute for the resolution enhancements afforded by a reduction in actinic radiation. However, as we move below 365 nm i-line systems, the optics and attendant materials considerations become acute. Additionally, there is an obvious economic impetus to breath new life into existing exposure systems. Various optical enhancement schemes have been developed over the past few years for these and other reasons. While many of these are well suited for the patterns and economics of memories, there are a few that enable sub 0.5 kl ASIC imaging. These include: large NA, optical proximity correction, and the deployment of sub- resolution assist features. We will demonstrate a blend of these that will support 280 nm ASIC pattern delineation with i-line (365 nm) systems and binary (non-phase-shift) masks.
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