The coupled-mode equations are derived to describe the dynamics of coupling between the pump mode and Stokes
mode for stimulated Raman scattering in designed high-Q/Vm silicon photonic band gap nanocavities. The interplay of
other Χ(3) effects such as two-photon absorption and optical Kerr, related free-carrier dynamics, thermal effects, as well
as linear losses such as cavity radiation and linear material absorption are also included. The numerical results
demonstrate both the lasing thresholds and the pulsed Raman frequency conversion in monolithic silicon high-Q/Vm
photonic band gap nanocavity lasers.
Recent important advances in subwavelength nanostructures offer extraordinary control over the properties of light. We can now manipulate the propagation, storage, and generation of light, as well as practically prescribe its matter interaction properties based on first-principles. Photonic crystals, in particular, offer the unique ability to achieve ultrahigh Q/Vm nanocavities, and the arbitrary control of dispersion characteristics to increase photon-matter interaction times. In addition, silicon photonics offer the unique opportunity towards the convergence of electronics and photonics in a monolithic silicon platform for unprecedented information processing capacity. In this talk, we will review critical advances in these arenas, as well as present our developments in fundamental and applied studies of optics in subwavelength nanostructures.
We study the interaction of silicon photonic crystal nanocavities with infiltrated colloidal PbS nanocrystals as a viable and efficient source for achieving indistinguishable and single photons. Nanocrystal-nanocavity coupling is predicted at near-infrared wavelengths, suggesting the possibility towards exciting silicon-based nanophotonic lasers, and novel efficient sources for fiber and silicon-based quantum information networks and systems. Two effective designs for nanocrystal-nanocavity coupling are illustrated that exhibit moderate to high cavity quality factors, and ultra-small modal volumes for spontaneous emission enhancements. It is shown that in principle our system can approach the observation of strong exciton-cavity coupling in a solid-state implementation at room temperature.
The majority of photonic crystals developed till-date are not dynamically tunable, especially in silicon-based structures. Dynamic tunability is required not only for reconfiguration of the optical characteristics based on user-demand, but also for compensation against external disturbances and relaxation of tight device fabrication tolerances. Recent developments in photonic crystals have suggested interesting possibilities for static small-strain modulations to affect the optical characteristics [1-3], including a proposal for dynamic strain-tunability [4]. Here we report the theoretical analysis, device fabrication, and experimental measurements of tunable silicon photonic band gap microcavities in optical waveguides, through direct application of dynamic strain to the periodic structures [5]. The device concept consists of embedding the microcavity waveguide [6] on a deformable SiO2 membrane. The membrane is strained through integrated thin-film piezoelectric microactuators. We show a 1.54 nm shift in cavity resonances at 1.56 um wavelengths for an applied piezoelectric strain of 0.04%. This is in excellent agreement with our modeling, predicted through first-order semi-analytical perturbation theory [7] and finite-difference time-domain calculations. The measured microcavity transmission shows resonances between 1.55 to 1.57 um, with Q factors ranging from 159 to 280. For operation at infrared wavelengths, we integrate X-ray and electron-beam lithography (for critical 100 nm feature sizes) with thin-film piezoelectric surface micromachining. This level of integration permits realizable silicon-based photonic chip devices, such as high-density optical filters and spontaneous-emission enhancement devices with tunable configurations.
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